• Journal of the Korean institute of surface engineering
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• v.42 no.1
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• pp.21-25
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• 2009

Using an evaporation system, $SiO_2$ was deposited as a buffer layer between a PET substrate and a ITO layer and then ITO/$SiO_2$/PET layers were annealed for 1.5 hours at the temperature of $180^{\circ}C$. Adhesion and electro-optical properties of ITO films were studied with thickness variance of a $SiO_2$ buffer layer. As a result of introduction of the $SiO_2$ buffer layer, sheet resistance and resistivity increased and a ITO film with optimum sheet resistance ($529.3{\Omega}/square$) for an upper ITO film of resistive type touch panel could be obtained when $SiO_2$ of $50{\AA}$ was deposited. And it was found that ITO films with $SiO_2$ buffer layer have higher transmittance of $88{\sim}90%$ at 550 nm wavelength than ITO films with no buffer layers and the transmittance was enhanced as $SiO_2$ thickness increased from $50{\AA}$ to $100{\AA}$. Adhesion property of ITO films with $SiO_2$ buffer layers became better than ITO films with no buffer layers and this property was independent of $SiO_2$ thickness variance ($50{\sim}100{\AA}$). By depositing a $SiO_2$ buffer layer of $50{\AA}$ on the PET substrate and sputtering a ITO thin film on the layer, a ITO film with enhanced adhesion, electro-optical properties could be obtained.

• Journal of the Korean Vacuum Society
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• v.12 no.S1
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• pp.88-91
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• 2003

Electromagnetic interference shielding and near-infrared cutoff filters for plasma display panel application were designed and fabricated by radio frequency magnetron sputtering. Three types of the filters were prepared: the basic structure of type A consisted of [$TiO_2$ Ti Ag $TiO_2$]; type B, of [$TiO_2$ ITO Ag $TiO_2$]; type C, of [$TiO_2$ ITO Ag ITO $TiO_2$]. Ti and ITO layers deposited on Ag layers were employed as barriers to prevent the oxidation and the diffusion of Ag film into the adjacent oxide layers. Optical, electrical, chemical, and structural properties were investigated, and the result shows that the filters with the ITO barrier layers provided an enhancement in transmittance in the visible owing to a lower absorption of ITO layers than Ti layers. Type C filter showed better optical and electrical performances and smoother surface roughness than Type B and C filters: the average sheet resistance was as low as 1.51 $\Omega\Box$ (where $\square$ stands for a square film), the peak transmittance in the visible was as high as 78.2 %, and the average surface roughness was 1.48 nm.

• Transactions on Electrical and Electronic Materials
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• v.16 no.1
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• pp.29-33
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• 2015

This paper presents the results of the optical characteristics of ITO thin film with different buffer layer thicknesses of $SiO_2$ and $Nb_2O_5$ for touch sensor application. $SiO_2$ and $Nb_2O_5$ buffer layers were deposited using RF magnetron sputtering equipment. The buffer layers were inserted between glass and ITO layers. In order to compare with the experimental results, the Essential Macleod Program (EMP) was adopted. Based on EMP simulation, the [$Nb_2O_5{\mid}SiO_2{\mid}ITO$] multi-layered thin film exhibited high transmittance of more than 85% in the visible region. The actual experimental results also showed transmittance of more than 85% in the visible region, indicating that the simulated results were well matched with the experimental results. The sheet resistance of ITO based film was about $340{\Omega}/sq$. The surface roughness maintained a relatively small value within the range of 0.1~0.4 nm when using the $Nb_2O_5$ and $SiO_2$ buffer layers.

• Journal of the Optical Society of Korea
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• v.20 no.6
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• pp.807-812
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• 2016

Transparent film heaters (TFHs) based on Joule heating are currently an active research area. However, TFHs based on an indium tin oxide (ITO) monolayer have a number of problems. For example, heating is concentrated in only part of the device. Also, heating efficiency is low because it has high sheet resistance ($R_s$). To address these problems, this study introduced hybrid layers of ITO/Ag/ITO deposited by magnetron sputtering, and the electrical, optical, and thermal properties were estimated for various thicknesses of the metal interlayer. The $R_s$ of ITO(40)/Ag/ITO(40 nm) hybrid TFHs were 5.33, 3.29 and $2.15{\Omega}/{\Box}$ for Ag thicknesses of 10, 15, and 20 nm, respectively, while the $R_s$ of an ITO monolayer (95 nm) was $59.58{\Omega}/{\Box}$. The maximum temperatures of these hybrid TFHs were 92, 131, and $145^{\circ}C$, respectively, under a voltage of 3 V. And that of the ITO monolayer was only $32^{\circ}C$. For the same total thickness of 95 nm, the heat generation rate (HGR) of the hybrid produced a temperature approximately $100^{\circ}C$ higher than the ITO monolayer. It was confirmed that the film with the lowest $R_s$ of the samples had the highest HGR for the same applied voltage. Overall, hybrid layers of ITO/Ag/ITO showed excellent performance for HGR, uniformity of heat distribution, and thermal response time.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2006.10a
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• pp.51-55
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• 2006

ITO/Ag/AZO and AZ0/Ag/ITO multi-layer films deposited on glass substrate by RF magnetron sputtering have a much better electrical properties than ITO and AZO single-layer films. The multi-layer structure was consisted of three layers of ITO, Ag and AZO. The optimum working pressure of AZO layers deposition was determined to be $1.0{\times}10^{-2}$ torr for high optical transmittance and good electrical conductivity. The electrical and optical properties of sub/IT0/Ag/AZO were higher than those of sub/AZ0/Ag/ITO multi-layer films.

• Journal of the Semiconductor & Display Technology
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• v.19 no.3
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• pp.88-92
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• 2020

As a highly conductive and transparent electrode, the optical transmittances of ITO/Ag/ITO were simulated and compared with the experimental results. The simulations are based on the finite-difference time-domain (FDTD) method in solving linear Maxwell equations. In our simulations, the computation domain is set in the XZ-plane with 3D dimension, and a plane wave with variable wavelengths ranging from 250 nm to 850 nm is incident in the z-direction at normal incidence to the ITO/Ag/ITO film surrounded by free-air space. As the results through both simulations and experiments, it was shown that the thickness combinations by the ITO layers of about 40 nm and the Ag layer of about 10 nm could be most suitable conditions as a high conductive transparent electrode having the transmittance similar to that of a single ITO layer.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.1
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• pp.30-33
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• 2006

Transparent indium tin oxide (ITO) anode surface was modified using $O_3$ Plasma and organic ultrathin buffer layers were deposited on the ITO surface using 13.56 MHz RF plasma polymerization technique. The EL efficiency, operating voltage and lifetime of the organic light-emitting device (OLED) were investigated in order to study the effect of the plasma surface treatment and role of plasma polymerized organic ultrathin buffer layer. Poly methylmethacrylate (PMMA) layers were plasma polymerized on the ITO anode as buffer layer between anode and hole transport layer (HTL). The plasma polymerization of the organic ultrathin layer were carried out at a homemade capacitive-coupled RF plasma equipment. N,N'-diphenyl-N,N'(3- methylphenyl)-1,1'-diphenyl-4,4'-diamine (TPD) as HTL, Tris(8-hydroxyquinolinato) Aluminum $(Alq_3)$ as both emitting layer (EML)/electron transport layer (ETL), and aluminum layer as cathode were deposited using thermal evaporation technique. Effects of the plasma surface treatment of ITO and plasma polymerized buffer layers on the OLED performance were discussed.

• Solar Energy
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• v.7 no.2
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• pp.7-13
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• 1987

Indium-Tin-Oxide (ITO)/Selenium heterojunction solar cells which fabricated by vacuum deposition technique and annealing process has been investigated. Prior to the Selenium deposition, a thin tellurium layer (about $10{\AA}$) was deposited onto the ITO layers to provide a sufficient mechanical bond between the Oxide and Selenium layers. The amorphous Selenium layer was deposited onto the Te-ITO layers, and then the crystallization of the amorphous Selenium was carried out using a hot plate at about $180^{\circ}C$ for 4 min. Efficient Selenium solar cells with conversion efficiency as high as 4.52% under AM1 condition has been fabricated in polycrystalline Selenium layer ($6{\mu}m$). The optimum data in manufacturing Se solar cell was listed in table.

• Journal of the Korean Ceramic Society
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• v.29 no.1
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• pp.48-52
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• 1992

Indium tin oxide (ITO) layers are of considerable interest on account of the combination of properties they provide high electrical conductivity, high infrared reflection with high solar energy transmission, high transmission in the visible range. We are concerned about the variation of the spectral transmittances and sheet resistances as the thickness of SiO2-ZrO2 barrier layer and ITO layers and heat treating conditions are changed. Transmittances and reflectivities were studied by measuring UV-VIS-NIR-, FT-IR spectroscopy. ITO films are crack free, homogeneous and of polycrystalline cubic structure. The microstructure of good ITO films shows a narrow grain size distribution and mean value of 100 nm. The selectivity of absorbing properties is improved by increasing the thickness of ITO films. The increase of sheet resistance of ITO films are due to the increase in the reaction between films and glass substrate.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2006.05a
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• pp.593-594
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• 2006

A novel thermal transfer method was developed to form the phosphor screen for VPT(Video Phone Tube). This method have advantages of simple process, clean environment, saving raw material and running-cost comparison of electrodeposition, spin coating of conventional methods. But now applying phosphor screen for thermal transfer method has been formed three layers (phosphor layer, ITO layer and thermal adhesive layer) on the PET film as substrate. This is complex process, run to waste of raw-material and require of high cost. Also ITO paste at present has been imported from Japan. To improve these problems, we have manufactured phosphor screen formed by two layers (phosphor layer and ITO layer). We have developed ITO paste that had both conductive and excellent thermal transfer abilities, made it of domestic raw-material.