• 제목/요약/키워드: ITO Coated Glass

검색결과 130건 처리시간 0.033초

The Characteristic Self-assembly of Gold Nanoparticles over Indium Tin Oxide (ITO) Substrate

  • Li, Wan-Chao;Lee, Sang-Wha
    • Bulletin of the Korean Chemical Society
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    • 제32권4호
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    • pp.1133-1137
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    • 2011
  • Ordered array of gold nanoparticles (Au NPs) over ITO glass was investigated in terms of ITO pretreatment, particle size, and diamines with different chain length. Owing to the indium-tin-oxide (ITO) layer coated on the glass, the substrate surface has a limited number of hydroxyl groups which can produce functionalized amine groups for Au binding, which resulted in the loosely-packed array of Au NPs on the ITO surface. Diamine ligand as a molecular linker was introduced to enhance the lateral binding of adjacent Au NPs immobilized on the amine-functionalized ITO glass, consequently leading to the densely-packed array of Au NPs over the ITO substrate. The molecular bridging effect was strengthened with the increase of chain length of diamines: C-12 > C-8. The packing density of small Au NPs (< 40 nm) was significantly increased with the increase of C-8 diamine, but large Au NPs (> 60 nm) did not produce densely-packed array on the ITO glass even for the dosage of C-12 diamine.

유리기판 위에 증착한 PZT 박막의 전기적 특성에 관한 연구 (A Study on Electrical Properties of PZT Thin Films Deposited on the Glass Substrates)

  • 정규원;주필연;박영;이준신;송준태
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제50권1호
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    • pp.24-29
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    • 2001
  • PZT thin films(4000A) have prepared onto 1737 corning glass and ITO coated glass substrates with a RF magnetron sputtering system using Pb_{1.05}(Zr_{0.52},Ti_{0.48})O_3$ceramic target, Electrical properties of PZT thin film deposited after ITO coated glass were P${\gamma}$ was decreased by 25% after 109cycles, respectively. With the RTA treatment duration and temperature increased, the crystallization of PZT thin films were enhanced, however, the leakage current density became higher. The leakage current mechanism was found to be space charge conduction by the defects and oxygen vacancies existing in PZT and PZT/bottom electrode interfaces.

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소결체 ITO/CdS/CdTe 태양전지의 광전압특성 (Photovoltaic Properties of Sintered CdS/CdTe Solar Cell)

  • 김동섭;조은철;안병태;임호빈
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1994년도 추계학술대회 논문집
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    • pp.216-220
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    • 1994
  • Polycrystalline CdS films have been prepared by coating a slurry, which consisted of CdS, 11w% CdCl$_2$ and appropriate amount of propylene glycol, on glass substrate and glass substrate coated with indium tin oxide(ITO) followed by sintering in a nitrogen atmosphere. CdTe slurries consisting of Te powder and Cd powder were coated on the sintered CdS films and ITO/CdS films and were sintered in nitrogen to prepare sintered CdS/CdTe and ITO/CdS/CdTe solar cells. The value of fill factor increased due to low series resistance and open circuit voltage decreased due to low shunt resistance in the ITO/CdS/CdTe solar cells.

ITO 기판에 제작된 PLZT 박막의 소성온도에 따른 특성 (Annealing-temperature Dependent Characteristics of PLZT Thin Films on ITO Coated Glass)

  • 최형욱;장낙원;박창엽
    • 한국전기전자재료학회논문지
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    • 제11권2호
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    • pp.128-132
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    • 1998
  • 2/65/35 PLZT stock solution prepared by Sol-Gel processing was spin-coated on ITO coated glass and annealed by RTA(Rapid Thermal Annealing). The crystal structure of films was reported based on the observation of crystallization process and microstructure of the film fabricated at different fabrication condition. Films were crystallized into rhombohedral structure by annealing at $750^{\circ}C$ for 5 min. As the annealing temperature increased, the size of rosette structure of the films was grown up from $2.4{\mu}m$ to $15{\mu}m$, dielectric constant was increased, coercive field was decreased 33.82 kV/cm, remnant polarization was increased to 39.84 ${\mu}C/cm^2$ and Optical transmittance was decreased.

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습식공정 기반 ITO 기판 위 산화아연 나노로드 모폴로지 제어 (Morphology Control of ZnO Nanorods on ITO Substrates in Solution Processes)

  • 신경식;이삼동;정순욱;이상우;김상우
    • 한국전기전자재료학회논문지
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    • 제22권11호
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    • pp.987-991
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    • 2009
  • We report growth of vertically well-aligned zinc oxide (ZnO) nanorods on indium-tin oxide (ITO)/glass substrates using a simple aqueous solution method at low temperature via control of the ZnO seed layer morphology. ZnO nanoparticles acting as seeds are pre-coated on ITO-coated glass substrates. by spin coating to control distribution and density of the ZnO seed nanoparticles. ZnO nanorods were synthesized on the seed-coated substrates in a dipping process into a main growth solution. It was found that the alignment of ZnO nanorods can be effectively manipulated by the spin-coating speed of the seed layer. A grazing incidence X-ray diffraction pattern shows that the ZnO seed layer prepared using the higher spin-coating speed is of uniform seed distribution and a flat surface, resulting in the vertical growth of ZnO nanorods aligned toward the [0001] direction in the main growth process.

ITO/glass 기판위에 제작된 Cross linked PVA 유기 게이트 절연막의 전기적 특성 (Electrical Properties of Organic PVA Gate Insulator Film on ITO/Glass Substrates)

  • 최진은;공수철;전형탁;박형호;장호정
    • 반도체디스플레이기술학회지
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    • 제9권4호
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    • pp.1-5
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    • 2010
  • The PVA (poly-vinyl alcohol) insulators were spun coated onto ITO coated glass substrates with the capacitors of Glass/ITO/PVA/Al structure. The effects of PVA concentrations (3.0, 4.0 and 5.0 wt%) on the morphology and electrical properties of the films were investigated. As the concentration of PVA increased from 3.0 to 5.0 wt%, the leakage current of device decreased from 17.1 to 0.23 pA. From the AFM measurement, the RMS value decreased with increasing PVA concentration, showing the improvement of insulator film roughness. The capacitances of the films with PVA concentrations of 4.0 and 5.0 wt% were about 28.1 and 24.2 nF, respectively. The lowest leakage current of 1.77 PA was obtained at the film thickness of 117.5 nm for the device with fixed PVA concentration of 5.0 wt%.

Rf Magnetron Sputtering 방법으로 제조된 $Ba_{1-x}Sr_xTiO_3$ 박막의 구조적 특성에 대한 연구 (A Study on the Structural Properties of rf Magnetron Sputtered $Ba_{1-x}Sr_xTiO_3$ Thin Film)

  • 김태송;오명환;김종희
    • 한국세라믹학회지
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    • 제30권6호
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    • pp.441-448
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    • 1993
  • The Ba1-xSrxTiO3 thin films deposited on ITO-coated glass substrate at 55$0^{\circ}C$ by rf magnetron sputtering method have individual preferential orientations as a function of composition (X=0, 0.25, 0.5, 0.75, 1) due to the stress relief interactions among the intrinsic compressive stress, thermal tensile stress adn extrinsic compressive stress (compressive stress in case of BaTiO3(Tc=12$0^{\circ}C$) and Ba0.75Sr0.25TiO3(Tc=57$^{\circ}C$)). This behavior also appears on the (BaSr)TiO3 thin films (X=0.5) deposited on ITO-coated glass substrate at deposition temperature between 35$0^{\circ}C$ and 55$0^{\circ}C$. The composition of Ba1-xSrxTiO3 thin films deposited on ITO-coated glass substrate at 55$0^{\circ}C$ is close to stoichiometry (1.009~1.089 in A/B ratio), but the compositional deviation from a stoichiometry is larger as SrTiO3 is added. The morphology of Ba1-xSrxTiO3 thin films is very similar for over all substrate temperatures, and the roughness due to the differences of cluster size is the smallest at X=0.25.

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졸-겔법에 의한 강유전 BST 박막의 제조 및 특성(II) - 초음파의 효과 (Fabrication and Properties of ferroelectric BST thin films prepared by sol-gel method (II) - effect of ultrasound on properties of thin film)

  • 이진홍;박병옥;이승엽
    • 한국결정성장학회지
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    • 제11권6호
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    • pp.252-258
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    • 2001
  • ($Ba_{0.7}Sr_{0.3})TiO_3$박막을 ITO-coated glass 기판위에 spin-coating법으로 제조하였다. 제조된 용액을 초음파 bath 내에서 초음파 처리하여 균일화를 촉진시킨 후 박막을 제조하여 초음파 처리하지 않은 용액으로 제조한 박막과의 비교를 통하여 초음파 효과를 알아보았다. 용액의 초음파 처리로 박막의 결정화 온도를 다소 낮추었으며 박막의 표면이 보다 균일하고 치밀화되었고 거칠기도 8.4nm에서 5.6nm로 더 낮아졌다. 그리고 박막의 투광성 및 전기적 특성 또한 용액의 초음파 처리로 인하여 향상되었다.

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Feasibility of Indium Tin Oxide (ITO) Swarf Particles to Transparent Conductive Oxide (TCO)

  • Hong, Sung-Jei;Yang, DuckJoo;Cha, Seung Jae;Lee, Jae-Yong;Han, Jeong-In
    • Current Photovoltaic Research
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    • 제3권2호
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    • pp.50-53
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    • 2015
  • Indium (In) is widely used for transparent electrodes of photovoltaics as a form of indium tin oxide (ITO) due to its superior characteristics of environmental stability, relatively low electrical resistivity and high transparency to visible light. However, In has been worn off in proportion to growth the In related market, and it leads to raise of price. Although In is obtained from ITO target scarps, much harmful elements are used for the recycling process. To decrease of harmful elements, ITO swarf particles obtained from target scraps was characterized whether it is feasible to transparent conductive oxide (TCO). The ITO swarf was crushed with milling process, and it was mixed with new ITO nanoparticles. The mixed particles were well dispersed into ink solvent to make-up an ink, and it was well coated onto glass substrate. After heat-treatment at $400^{\circ}C$ under $N_2$ rich environments, optical transmittance at 550 nm and sheet resistance of the ITO ink coated layer was 71.6% and $524.67{\Omega}/{\square}$, respectively. Therefore, it was concluded that the ITO swarf was feasible to TCO of touch screen panel.