• 한국전기전자재료학회논문지
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• 제19권12호
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• pp.1144-1148
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• 2006

We have investigated liquid crystal (LC) aligning capabilities and electro-optical (EO) characteristics of transparent electrodes as Al-doped ZnO (AZO) substituting indium tin oxide (ITO). The experiment results show that a uniform vertical LC alignment on AZO electrodes based on a rubbed polyimide (PI) surface were achieved. A high pretilt angle of about $88^{\circ}$ was obtained. EO performances of the VA cell on rubbed PI surfaces with AZO electrodes are almost the same as that of the VA cell with ITO electrodes. These results appeared that AZO electrodes as transparent electrodes of LCDs could substitute ITO electrodes.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2000년도 추계종합학술대회 논문집(2)
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• pp.229-232
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• 2000

InP/lnGaAs HPT's were fabricated by employing Indium Tin Oxide(ITO) transparent emitter contact. The device showed the current gaing 70 was obtained but the emitter series resistance was significantly increased. the electrical charateristics of the device were similar to HBT's. However Vceoff was shifted the positive direction. Such a shift ma be resulted from the formation of the shottky barrier rather than the ohmic contact between ITO and n+ InP emitter.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 추계학술대회 논문집 전기물성,응용부문
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• pp.148-150
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• 2005

Indium tin oxide (ITO) thin film was polished by chemical mechanical polishing (CMP) immediately after pad conditioning with the various conditioning temperatures by control of de-ionized water (DIW). Light transparent efficiency of ITO thin film was improved after CMP process after pad conditioning at the high temperature because the surface morphology was smoother by soften polishing pad and decreased particle size.

• 한국전기전자재료학회논문지
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• 제20권3호
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• pp.268-272
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• 2007

A fully integrable InP/InGaAs HPT with an ITO emitter contact was first fabricated by employing a $SiO_2$ passivation layer. The electrical and the optical characteristics of the HPT with a passivation layer were measured and compared with those of the HPT without a passivation layer. The only noticeable difference was the increased emitter series resistance of the HPT with a passivation layer. AES analysis was performed to explain the reason of the increased emitter series resistance. Results show that PECVD $SiO_2$ deposition and annealing processes cause the diffusion of oxygen to the interface and the depletion of tin at the interface, which may be responsible for the increase of the series resistance.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.467.2-467.2
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• 2014

유기태양전지는 친환경 에너지 소스로써 저가 대량 생산이 가능하고 특히 유연한 기판에 적용이 가능하여 많은 관심을 받고 있다. 그럼에도 불구하고 기존에 사용되는 indium tin oxide (ITO)의 사용으로 인한 유연성 부족으로 대체되는 투명전극의 개발이 요구되어지고 있다. 이로 인해 carbon nanotubes, graphene, thin metals, metal grids, and conducting polymers 등이 연구되고 있으며, 이중 Silver nanowires (Ag NWs)를 이용한 방식도 많은 관심과 함께 전기광학적 특성에 대한 연구가 진행되고 있다. 하지만 유기전자소자에 사용되기에는 몇 가지 문제점이 발생하는데 이를 해결하기 위한 노력이 다양하게 이루어지고 있다. 특히 다양한 물질의 혼합을 통해 개선하고자 하는 노력이 증가하고 있는데 적층구조의 전도성필름 형성을 통해 ITO-free OPVs에서 Ag nanowire를 transparent conductive electrodes로 활용하였다. Ag NWs층과 PEDOT:PSS layer의 복합화를 통해 저가의 ITO-free OPVs용 transparent anodes가 가능해졌다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.190.1-190.1
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• 2014

The interfacial electronic structure of a bilayer of chloroaluminum phthalocyanine (ClAlPc) and pentacene grown on indium tin oxide (ITO) has been studied using synchrotron radiation-excited photoelectron spectroscopy. The energy difference between the highest occupied molecular orbital (HOMO) level of the pentacene layer and the lowest unoccupied molecular orbital (LUMO) level of the ClAlPc layer (EDHOMO - EALUMO) was determined and compared with that of C60/pentacene bilayers. The EDHOMO - EALUMO of a heterojunction with ClAlPc was found to be 1.4 eV, while that with C60 was 1.0 eV. This difference is discussed in terms of the difference of the ionization energy of each acceptor materials. We also obtained the complete energy level diagrams of ClAlPc/pentacene/ITO and C60/pentacene/ITO, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.105-106
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• 2005

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process has been widely used in microelectronics and semiconductor processes. Indium tin oxide (ITO) thin film was polished by CMP by the change of process parameters for the improvement of CMP performance. Removal rate and planarity were improved after CMP process at the optimized process parameters compared to that before CMP process.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2009년도 춘계학술대회 논문집
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• pp.186-186
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• 2009

RF 부가형 DC 마그네트론 스퍼터링 공정을 이용하여 상온에서 Indium tin oxide (ITO) 박막을 PET (polyethylene terephthalate) 기판 위에 증착하였다. 전체 파워는 70W로 유지하고 RF/ (DC+RF) 파워율은 0 %에서 100 %까지 20% 비율로 증가시켰다. 50 %의 RF/(RF+DC) 파워율에 의해 증착된 ITO 박막에서 상대적으로 낮은 비저항을 얻을 수 있었으며, bending test에 의한 기계적 내구성 또한 가장 우수하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.1430-1432
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• 2009

The effect of different annealing methods on the sheet resistance of indium tin oxide (ITO) on polyimide (PI) substrate has been investigated. As electro-annealing induced the predominant growth of crystallites of ITO thin films along (400) plane, the sheet resistance of ITO films that were electro-annealed for 2 mA at $180^{\circ}C$ considerably decreased from 50 to 28 ${\Omega}/cm^2$.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제53권4호
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• pp.231-236
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• 2004

A normally open thermopneumaticc-actuated microvalve has been fabricated and their properties are investigated. The advantages of the proposed microvalve are of the low cost fabrication process and the transparent optical property using polydimethylsiloxane (PDMS) and indium tin oxide (ITO) glass. The fabricated microvalves with in-channel configuration are easily integrated with other microfluidic devices on the same substrate. The fabrication process of thermopneumatic-actuated microvalvesusing PDMS is very simple and its performance is very suitable for a disposable lab-on-a-chip. The PDMS membrane deflection increases and the flow rates of the microchannel with microvalvels decrease as the applied power to the ITO heater increases. The powers at flow-off are dependent on the membrane thickness and the applied inlet pressure but are independent of the channel width of microvalves. The flow rate is well controlled by the switching function of ITO heater and the closing/opening times are around 20 sec and 25 sec, respectively.