대한전자공학회:학술대회논문집 (Proceedings of the IEEK Conference)
- 대한전자공학회 2000년도 추계종합학술대회 논문집(2)
- /
- Pages.229-232
- /
- 2000
ITO 투명전극을 갖는 InP/InGaAs HPTs 제작
Fabrication of InP/InGaAs HPT with ITO Transparent Emitter Contact
- 김용근 (영남대학교 전자공학과 광전자 연구실) ;
- 장은숙 (영남대학교 전자공학과 광전자 연구실) ;
- 최병건 ;
- 신주선 (옵토웨이) ;
- 성광수 (영남대학교 전자공학과 광전자 연구실) ;
- 한교용 (영남대학교 전자공학과 광전자 연구실)
- Kim, Young-Geun (Dept. of Electronics Yeungnam University) ;
- Jang, Eun-Sook (Dept. of Electronics Yeungnam University) ;
- Choi, Byong-Gun (ETRI) ;
- Shin, Ju-Sun (Optoway) ;
- Sung, Kyang-Su (Dept. of Electronics Yeungnam University) ;
- Han, Kyo-Yong (Dept. of Electronics Yeungnam University)
- 발행 : 2000.11.01
초록
InP/lnGaAs HPT's were fabricated by employing Indium Tin Oxide(ITO) transparent emitter contact. The device showed the current gaing 70 was obtained but the emitter series resistance was significantly increased. the electrical charateristics of the device were similar to HBT's. However Vceoff was shifted the positive direction. Such a shift ma be resulted from the formation of the shottky barrier rather than the ohmic contact between ITO and n+ InP emitter.
키워드