• Journal of the Korean institute of surface engineering
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• v.40 no.3
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• pp.117-124
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• 2007

The ITO films were deposited on glass substrates by RF-superimposed dc reactive magnetron sputtering and were annealed in $N_2$ vacuum furnace with temperatures in the range of $403K{\sim}573K$ for 30 minutes. Electrical, optical and structural properties of ITO films were examined with varying annealing temperatures from 403 K to 573 K. The resistivity of as-deposited ITO films was $5.4{\times}10^{-4}{\Omega}cm$ at the sputter conditions of applied RF/DC power of 200/200 W, $O_{2}$ flow of 0.2 seem and Ar flow of 0.2 seem. As a result of annealing in the temperature range of $403K{\sim}573K$, the crystallization occurred at 423 K that is lower than the crystallization temperature caused by a conventional sputtering method. And the resistivity decreased from $5.4{\times}10^{-4}{\Omega}cm\;to\;2.3{\times}10^{-4}{\Omega}cm$, the carrier concentration and mobility of ITO films increased from $4.9{\times}10^{20}/cm^3\;to\;6.4{\times}10^{20}/cm^3$, from $20.4cm^2/Vsec\;to\;41.0cm^2/Vsec$, respectively. The transmittance of ITO films in visible became higher than 90% when annealed in the temperature range of $423K{\sim}573K$. High quality ITO thin films made by RF-superimposed dc reactive magnetron sputtering and annealing in $N_2$ vacuum furnace will be applied to transparent conductive oxides of the advanced flat panel display.

• Composites Research
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• v.23 no.6
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• pp.1-6
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• 2010

The electrical conductivity of carbon-fiber reinforced plastics (CFRP's) has been improved by indium-tin oxide (ITO) nano-particle coating on carbon fibers for the purpose of lightning strike protection of composite fuselage skins. ITO nano-particles were coated on the surface of carbon fibers by spraying the colloidal suspension with 10~40% ITO content. The electrical conductivity of the CFRP has been increased more than three times after ITO coating, comparable to or higher than that of B-787 composite fuselage skins with metal wire-meshes on the outer surface, without sacrificing the tensile property due to the existence of nano-particles at fiber-matrix interface. The damage area by the simulated lightning strike was also verified for different materials and conditions by using ultrasonic C-scan image. As the electrical conductivity of 40% nano-ITO coated sample surpass that of the B-787 sample, the damage area by lightning strike also appeared comparable to that of the materials currently employed for composite fuselage construction.

• Electrical & Electronic Materials
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• v.7 no.3
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• pp.243-251
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• 1994

ITO(Indium Tin Oxide) film with thickness of 1500.angs. was prepared by an e-beam evaporator onto a glass and a p-type InP wafer (100) LEC grown Zn-doped p=2.3*10$\^$16/cm$\^$-3/), in which the components of ITO used for evaporation source were hot pressed pellets 1 mole% ln$\_$2/O$\_$3/+9 mole% SnO$\_$2/, and evaporated in O$\_$2/ ambient. The optimum conditions to preparation of ITO thin film were the substrate temperature of 350.deg. C, the injected oxygen pressure of 2*10$\^$-4/ torr, and the evaporation speed of 0.2-0.3.angs./sec, respectively. In these optimum conditions, the resistivity and the carrier concentration were 5.3*10$\^$-3/ .ohm.-cm, 6.5*10$\^$20/cm$\^$-3/, and the transmittance was over 80%. From the results of J-V measurements in ITO/p-InP structure solar cells, the higher pressure of injected oxygen, the more open circuit voltage. The efficiency of ITO/p-InP solar cell without the grid line contact, prepared by the optimum evaporation conditions, was 7.19%. By using the grid line contact, the efficiency, the open circuit voltage, the short circuit current density, the fill factor, the series resistance, and the shunt resistance were 8.5%, 0.47V, 29.48 mAcm$\^$-2/ , 61.35%, 3.ohm., and 26.6k.ohm., respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.165-165
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• 2007

투명전도박막은 ITO, $SnO_2$, ZnO, 등이 있으나 $SnO_2$는 자외선 영역까지 투과시키는 우수한 광학적 특성을 나타내지만, 상당히 큰 전기저항으로 인해 현재는 현재 ITO가 널리 이용되고 있다. ITO(Indium Tin Oxide)박막은 자외선 영역에서 반사율이 높으며 가시광선영역에서는 80%이상의 뛰어난 투과율을 가지고 있다. 또한 낮은 전기저항과 넓은 광학적 밴드갭 때문에 가장 유용한 투과전도성 재료 중에 하나이다. 이러한 특성 때문에 여러 가지 문자 표시소자의 투명전극, 태양전지의 창재료, 정전차폐를 위한 반도체 포장재료, 열반사막, 면발열체, 광전변환 소자에 응용되고 있다. 일반적으로 박막의 제작에는 저항가열법과 전자선가열법, 스퍼터링법의 물리적 증착과 화학적 증착으로 나뉜다. 본 논문에서는 증착온도를 달리 하여 RF-sputtering에 의해 ITO박막을 증착한 후 온도증가에 따른 박막의 특성을 연구하였으며 또한 광역평탄화를 위한 CMP공정을 적용하여 증착온도가 연마에 미치는 영향을 연구하였다. 본 실험에서 사용된 ITO박막은 $2{\times}2Cm$의 Corning glass위에 증착되었으며 타겟은 $In_2O_3$와 $SnO_2$가 9:1로 혼합된 Purity 99.99%이상의 직경 2 inch인 ITO타겟을 사용하였다. 박막 증착시 기판온도는 상온에M $200^{\circ}C$까지 변화시켰으며 RF power는 100W로 일정하게 하였으며 증착압력은 $8{\times}10^{-2}$Torr이였다. CMP공정조건은 헤드속도 60rpm, 플레이튼 속도 60rpm, 슬러리 주입 유량 60mml/min, 압력 $300g/cm^2$이였다. 전기적 특성은 four point probe를 이용하여 측정하였으며 광학적 특성은 UV-Visible Spectrometer를 이용하여 200~900nm의 파장범위에서 광투과도를 측정하였다.

• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.121.2-121.2
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• 2011

Aluminum-doped Zinc Oxide (AZO) is considered as an excellent candidate to replace Indium Tin Oxide (ITO), which is widely used as transparent conductive oxide (TCO) for electronic devices such as liquid crystal displays (LCDs), organic light emitting diodes (OLEDs) and organic solar cells (OSCs). In the present study, AZO thin film was applied to the transparent electrode of a channel-shaped flexible organic solar cell using a low-temperature selective-area atomic layer deposition (ALD) process. AZO thin films were deposited on Poly-Ethylene-Naphthalate (PEN) substrates with Di-Ethyl-Zinc (DEZ) and Tri-Methyl-Aluminum (TMA) as precursors and $H_2O$ as an oxidant for the atomic layer deposition at the deposition temperature of $130^{\circ}C$. The pulse time of TMA, DEZ and $H_2O$, and purge time were 0.1 second and 20 second, respectively. The electrical and optical properties of the AZO films were characterized as a function of film thickness. The 300 nm-thick AZO film grown on a PEN substrate exhibited sheet resistance of $87{\Omega}$/square and optical transmittance of 84.3% at a wavelength between 400 and 800 nm.

• Journal of Sensor Science and Technology
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• v.20 no.3
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• pp.156-161
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• 2011

We fabricated a schottky barrier metal oxide semiconductor field effect transistor(SB-MOSFET) by applying indium-tin-oxide(ITO) to the source/drain on a highly resistive GaN layer grown on a silicon substrate. The MOSFET, with 10 ${\mu}M$ gate length and 100 ${\mu}M$ gate width, exhibits a threshold gate voltage of 2.7 V, and has a sub-threshold slope of 240 mV/dec taken from the $I_{DS}-V_{GS}$ characteristics at a low drain voltage of 0.05 V. The maximum drain current is 18 mA/mm and the maximum transconductance is 6 mS/mm at $V_{DS}$=3 V. We observed that the spectral photo-response characterization exhibits that the cutoff wavelength was 365 nm, and the UV/visible rejection ratio was about 130 at $V_{DS}$ = 5 V. The MOSFET-type UV detector using ITO, has a high UV photo-responsivity and so is highly applicable to the UV image sensors.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.590-590
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• 2012

A transparent conducting oxide (TCO) layer was applied in crystalline Si (c-Si) solar cells without use of the conventional SiNx-coating. A high quality indium-tin-oxide (ITO) layer was directly deposited on an emitter layer of a Si wafer. Three different types of emitters were formed by controlling the phosphorous diffusion condition. A light-doped emitter forming a thinner emitter junction showed an improved photoconversion efficiency of 14.1% comparing to 13.2% of a heavy-doped emitter. This was induced by lower recombination within a narrower depletion region of the light-doped emitter. In the aspect of light management, the intermediate refractive index of ITO is effective to reduce the light reflection leading the enhanced carrier generation in a Si absorber. For the electrical aspect, the ITO layer serves as an efficient electrical conductor and thus relieves the burden of high contact resistance of the light-doped emitter. Additionally, the ITO works as a buffer layer of Ag and Si and certainly prevents the shunting problem of Ag penetration into Si emitter region. It discusses an efficient design scheme of TCO-embedded emitter Si solar cells.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.351-352
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• 2012

UV LED에서 p-GaN층의 높은 일함수와 자체 면저항이 크기 때문에 current spreading layer인 ITO (indium tin oxide) 투명전극이 사용되고 있다. 따라서 높은 UV 파장대 투과율과 낮은 면 저항이 매우 중요하다. 본 연구에서, RF magnetron sputter를 사용하여 ITO 투명전극을 glass(boro33)에 120 nm 두께로 증착하였다. 그 후 RTA (rapid thermal annealing)을 이용해 120초 동안 $600^{\circ}C$에서 Air, $N_2$ (15 sccm), vacuum 환경에서 열처리를 하여 UV-Vis-NIR spectrophotometer를 사용해 ITO 박막의 투과율을 측정하고, Hall measurement system을 이용하여 전기적 특성을 측정하였다. Fig. 1과 같이 열처리 환경에 따라 ITO 박막의 투과율이 변하고 또한 Table 1과 같이 전기적 특성도 변함을 알 수 있었다. Air 환경에서의 열처리는 reference 샘플과 비교 했을 때 400 nm 이하의 파장에서 투과율이 증가하였지만 400 nm 이상의 파장에서는 투과율이 낮아짐을 볼 수 있고, 면 저항 (Ohm/sq)은 오히려 reference (as deposited) 샘플과 비교하여 24 Ohm/sq 증가하는 것을 알 수 있었다. 반면에 $N_2$, vacuum 환경에서 열처리는 reference (as deposited) 샘플 보다 380 nm 파장대에서 16% 정도 높은 투과율을 보였고, 면저항 역시 2배 이상 낮아졌다. 둘 다 비슷한 투과율과 면저항을 나타내었지만 vacuum 환경이 좀 더 우수한 광학적 특성을 나타내었고 반면에 $N_2$ 환경은 좀 더 낮은 면저항을 나타내었다. ITO 박막을 증착한 후 vacuum 환경에서 열처리를 통하여 제작된 UV-LED (중심 파장 380 nm)가 Fig. 2와 같이 입력 전류 450 mA에서 광출력이 46% 정도 향상 되었고 안정된 I-V 특성 보였다.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.11a
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• pp.5.1-5.1
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• 2009

Organic photovoltaic (OPV)cells have attracted considerable attention due to their potential for flexible, lightweight, and low-cost application of solar energy conversion. Since a 1% power conversion efficiency (PCE) OPV based on a single donor-acceptor heterojunction was reported by Tang, the PCE has steadily improved around 5%. It is well known that a high parallel (shunt)resistance and a low series resistance are required simultaneously to achieve ideal photovoltaic devices. The device should be free of leakage current through the device to maximize the parallel resistance. The series resistance is attributed to the ohmic loss in the whole device, which includes the bulk resistance and the contact resistance. The bulk resistance originated from the bulk resistance of the organic layer and the electrodes; the contact resistance comes from the interface between the electrodes and the active layer. Furthermore, it has been reported that the bulk resistance of the indium tin oxide (ITO) of the devices dominates the series resistance of OPVs for a large area more than $0.01\;cm^2$. Therefore, in practical application, the large area of ITO may significantly reduce the device performance. In this work, we investigated the effect of sheet resistance ($R_{sh}$) of deposited ITO on the performance of OPVs. It was found that the device performance of polythiophene-fullerene (P3HT:PCBM) bulk heterojunction OPVs was critically dependent on Rsh of the ITO electrode. With decreasing $R_{sh}$ of the ITO from 39 to $8.5\;{\Omega}/{\square}$, the fill factor (FF) of OPVs was dramatically improved from 0.407 to 0.580, resulting in improvement of PCE from $1.63{\pm}0.2$ to $2.5{\pm}0.1%$ underan AM1.5 simulated solar intensity of $100\;mW/cm^2$.

• Laser Solutions
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• v.14 no.2
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• pp.17-23
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• 2011

Active thin films are ubiquitous in the manufacture of all forms of flat panel display (FPD). One of the most widely employed thin films is indium tin oxide (ITO) and metal films used electrically conductive materials in display industries. ITO is widely used for fabrication of LCD, OLED device, and many kinds of optical applications because of transparency in visible range and its high conductivity and metal films are also widely employed as electrodes in various electric and display industries. It is important that removing specific area of layer, such as ITO or metal film on substrate, to fabricate and repair electrode in display industries. In this work, we demonstrate efficient selective ablation process to ITO and aluminum film on glass using a femtosecond laser (${\lambda}p=1025nm$) respectively. The femtosecond laser with wavelength of 1025nm, pulse duration of 400fs, and the repetition rate of 100kHz was used for selectively removing ITO and Al on glass in the air. We can successfully remove the ITO and Al films with various pulse energies using a femtosecond laser.