• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.316-316
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• 2008

Using an evaporation method, $SiO_2$ was deposited as a buffer layer between a flexible PET substrate and a ITO film deposited by DC magnetron sputtering and electro-optical properties were investigated with thickness variance of $SiO_2$ layers. After coating a $SiO_2$ layer and a ITO film, the ITO/$SiO_2$/PET was heated up to $200^{\circ}C$ and the resistivity and the transmittance were measured by hall effect measurement system and UV/VIS/NIR spectroscopy. As a result of depositing a $SiO_2$ buffer layer, the resistivity increased and the transmittance and adhesion property were enhanced than ITO films with no buffer layers and the resistivity was lowered as $SiO_2$ thickness increased from 50 $\AA$ to 100 $\AA$. It was found that the transmittance was independent of annealing temperature variance in $150^{\circ}C{\sim}200^{\circ}C$ and the resistivity decreased as the temperature increased and especially decreasing rate of the resistivity was higher as the buffer layer thickness was thinner. So under optimized depositing of $SiO_2$ buffer layers and post-annealing of ITO/$SiO_2$/PET, ITO films with enhanced adhesion, electro-optical properties can obtained.

• Journal of the Korean institute of surface engineering
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• v.38 no.2
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• pp.69-72
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• 2005

ITO-Al-ITO multi-layers were deposited at room temperature by RF magnetron sputtering on polyethylene terephthalate (PET). The films were deposited at various pressures of $8\times10^{-4},\;1\times10^{-3},\;4\times10^{-3},\;8\times10^{-3}\;and\;1\times10^{-2}$ Torr. A correlation between microstructure and electro-optical properties was studied. Films deposited? at low pressure have higher transmission, and lower reflectance and resistance than film deposited at high pressure. Sheet resistance, transmission, and reflectance were $141.6\Omega/\Box\;88\%\;and\;6.8\%$ resectively when the deposition pressure was $8\times10^{-4}$ torr, that was the optimum condition.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.181.1-181.1
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• 2016

플렉서블 디스플레이 및 태양전지가 지향하고 있는 저가, 고속의 대량 생산을 위해서는 필름을 기반으로 하는 연속 공정에 의한 대량의 ITO 박막의 증착이 필수적이다. 이로 인해 롤투롤(roll-to-roll) 스퍼터링법을 이용한 ITO 박막의 연속 증착 공정이 차세대 플렉서블 디스플레이 및 태양전지의 대량 생산을 위한 해결책으로 각광받고 있다. 그러나 대부분의 폴리머 필름의 경우 증착 시 발생되는 열 또는 플라즈마에 의해 방출되는 수분과 유기 솔벤트 같은 오염 물질들에 의한 ITO 박막의 특성 저하와, 낮은 열적 안정성을 가지는 기판 특성상 고온(>$200^{\circ}C$)에서 증착이나 후 열처리를 할 수가 없기 때문에, 낮은 저항과 높은 광투과도 특성을 가지는 ITO 필름을 제작하기 위한 공정 최적화가 필요하다. 따라서, 본 연구에서는 롤투롤 스터링법으로 PET 필름 위에 Sn함량이 각각 3, 5, 7.5 10% 도핑된 ITO 타겟을 사용하여 ITO 박막을 증착 하였고, 전기적 광학적 특성을 조사하여 롤투롤 스퍼터링법으로 우수한 전기 전도도와 광투과도 특성을 가지는 ITO/PET 필름의 증착 조건을 최적화 하였다. 또한, ITO 증착 시 필름에서 발생하는 수분에 의한 ITO 박막의 특성 저하 현상에 대하여 조사하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.213-213
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• 1999

현재 LCD용 기판재료는 ITO/glass를 전극으로 사용하고 있다. 그러나 유리기판은 무겁고 깨지기 쉽기 때문에 사용상 곤란한 점이 많다. 최근 flexible하고 가공성 및 생산성이 우수한 플라스틱한 ITO를 성막하여 EL용, Touch panel, plastic LCD용 사용하려는 시도로, roll-to-roll 연속 스퍼터링에 의한 ITO성막공정에 대한 연구가 최근 활발하게 이루어지고 있다. 폴리머는 유리에 비해 Tg 온도가 낮고, 기판으로부터의 수분 및 여러 종류의 가스방출이 심하기 때문에 유리와는 달리 ITO막의 제조에 있어 큰 차이점이 있다. 따라서, 폴리머에 반응성 스퍼터링을 하기 위해서는 표면처리가 중요한 변수가 되며, roll to roll sputter로 ITO 필름을 얻기 위해서는 폭과 길이 방향으로 균일한 막을 얻는 것이 중요하다. 두께 75$\mu\textrm{m}$, 폭 190mm, 길이 400m로 권취된 광학용 Polyethylene terephthalate(PET:Tg:8$0^{\circ}C$)위에 In-10%Sn의 합금타겟과 Unipolar pulsed DC power supply를 사용하여 반응성 마그네트론 스퍼터링 방법으로 0.2m/min의 속도로 연속 스퍼터링 하였다. PET를 Ar/O2 혼합가스로 플라즈마 전처리를 한 후, AFM, XPS를 이용하여 효과를 분석을 하였고, 성막전에 가스방출을 막기 위해 TiO를 코팅하였다. Pilot 연속 생산공정에서 재현성을 위해 PEM(Plasma Emission Monitor)의 optical emission spectroscopy를 이용, 금속과 산화물의 천이구역에서 sprtter된 I/Sn 이온과 산소 이온의 반응에 의한 최적의 플라즈마의 강도값을 입력하여 플라즈마의 radiation을 검출하고, 스퍼터링 공정중 실질적인 in-situ 정보로 이용하였다. PEM을 통하여 In/Sn의 플라즈마 강도변화를 조사하였다. 초기 In/Sn의 플라즈마 강도(intensity)는 강도를 100하여, 산소를 주입한 결과, plasma intensity가 35 줄어들었고, 이때 우수한 ITO 박막을 얻을 수 있었다. Pulsed DC power를 사용하여 아크 현상을 방지하였다. PET 상에 coating 된 ITO 박막의 표면저항과 광투과도는 4-point prove와 spectrophotometer를 이용하여 분석하였고, AES로 박막의 두께에 따른 성분비를 확인하였다. ITO 박막의 광투과도는 산소의 유량과 sputter 된 In/Sn ion의 plasma emission peak에 따라 72%-92%까지 변화하였으며, 저항은 37$\Omega$/$\square$ 이상을 나타내었다. 박막의 Sn/In atomic ratio는 0.12, O/In의 비율은 In2O3의 화학양론적 비율인 1.5보다 작은 1.3을 나타내었다.

• Korean Journal of Materials Research
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• v.17 no.10
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• pp.516-520
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• 2007

Indium tin oxide, which is used as transparent conducting layer in flexible device, is deposited on PET film by a magnetron sputtering in 300 mm wide roll-to-roll process (vacuum web coating). Sheet resistance, specific resistance and transmittance is differed by sputtering parameters such as working pressures, oxygen partial pressure, and thickness of ITO layer. ITO layer is deposited about 90 nm at roll speed of 0.24 m/min and its sputtering power is 3 kW. From the XRD spectrum deposited ITO layer is verified as amorphous. Under working pressure varied from $3{\times}10^{-4}\;Torr$ to $2{\times}10^{-3}\;Torr$, sheet resistance is lowest at the working pressure of $1{\times}10^{-3}\;Torr$ and its value is from $110\;{\Omega}/{\square}$ to $260\;{\Omega}/{\square}$ at the thickness of 90 nm. Oxygen partial pressure also varies sheet resistance and is optimized at the regime from 0.2% ($1.8{\times}10^{-6}\;Torr$) to 0.6% ($6{\times}10^{-6}\;Torr$). In this oxygen partial pressure sheet resistance is lower than $150\;{\Omega}/{\square}$. As ITO layer thickness increases, sheet resistance decreases down to $21\;{\Omega}/{\square}$ and specific resistance is about $7.5{\times}10.4{\Omega}cm$ in 340 nm thickness ITO layer. Transmittance is measured at the wavelength of 550 nm and is about 90% for 180 nm thickness ITO/PET.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.605-608
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• 2008

The preparation and characteristics of flexible indium tin oxide electrodes grown on polyethylene terephthalate (PET) substrates using a specially designed roll-to-roll sputtering system for use in flexible optoelectronics In spite of low a PET substrate temperature, we can obtain the flexible electrode with a sheet resistance of 47.4 ohm/square and an average optical transmittance of 83.46 % in the green region of 500~550 nm wavelength. Both x-ray diffraction (XRD) and field emission scanning electron microscopy (FESEM) analysis results showed that all flexible ITO electrodes grown on the PET substrate were an amorphous structure with a very smooth and featureless surface, regardless of the Ar/$O_2$ flow ratio due to the low substrate temperature, which is maintained by a cooling drum. In addition, the flexible ITO electrode grown on the Ar ion beam treated PET substrates showed more stable mechanical properties than the flexible ITO electrode grown on the wet cleaned PET substrate, due to an increased adhesion between the flexible ITO and the PET substrates.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.6
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• pp.252-255
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• 2014

Indium tin oxide (ITO) films with various oxygen partial pressure from 0 to $6{\times}10^{-5}$ Pa were prepared onto polyethylene terephthalate (PET) using RF magnetron sputtering at room temperature. The structural, electrical and optical properties of the grown ITO films were investigated as a function of the oxygen partial pressure. The amorphous nature of the ITO films was dominant at the partial pressure below $1{\times}10^{-5}$ Pa and the degree of crystallinity increased as the oxygen concentration increased further. This structural change comes with the increased carrier concentration and reduction of the electrical resistivity down to $9.8{\times}10^{-4}{\Omega}{\cdot}cm$. The average transmittance (at 400~800 nm) of the ITO deposited on the PET substrates increased as the oxygen partial pressure increased and transmittance above 80 % was achieved with the partial pressure of $4{\times}10^{-5}$ Pa. The results show that the choice of optimal oxygen partial pressure can present improved film crystallinity, the increased carrier concentration, and the enhancement in the electrical conductivity.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1795-1796
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• 1999

ITO thin films have been deposited on PET substrate by reactive dc magnetron sputtering without substrate heater and post heat treatment. The electrical and optical properties of as-deposited films are dominated by oxygen gas ratio. As the experimental results, the excellent ITO films are prepared on PET substrate at the operating conditions as follows: operating pressure of 5 mTorr, target-substrate distance of 4.5 cm, dc power of $20{\sim}30W$, and oxygen gas ratio of 10 %. The optical transmittance is above 80 % at 550 nm, and the sheet resistance and resistivity of films are $24{\Omega}$/square and $1.5{\times}10^{-3}{\Omega}cm$, respectively.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.04a
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• pp.69-70
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• 2007

FTS(Facing Target Sputtering) 장치를 이용하여 polyethylene terephthalate (PET) 필름 위에 ITO(Indium Tin Oxide) 박막을 성장시키고 이들의 광학적, 구조적 특성을 조사하였다. 막 두께는 150 nm로 고정하였고, 인가적력과 산소 가스 유량비를 변수로 박막을 합성 하였다. 그 결과 80 % 이상의 광투과율과 Rms 26.8 nm 값을 갖는 ITO / PET 박막을 합성하였다.

• Composites Research
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• v.24 no.5
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• pp.17-22
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• 2011

Recently transparent electrodes using carbon nanotube (CNT) have been studied actively to replace conventional ITO. In this work, CNT or ITO coated poly(ethylene terephthalate) (PET) were prepared by controlling the surfaces since the cohesion degree depends upon drying conditions. As transparent electrode application, 3 drying temperatures were set as 20, 80, and $120^{\circ}C$ to produce the change of surface properties. Interfacial durability and electrical properties of prepared transparent electrodes were evaluated by electrical resistance measurement. Surface change with changing drying temperature was observed by FE-SEM, whereas the transparency change was measured by UV-spectroscopy. The electronic properties of nanoparticle coated surface were evaluated using cyclic voltametry method upon the surface change with controlled drying temperature. Durability of CNT coated surfaces was better than ITO coated ease. As drying temperature increased, better coated surface was prepared due to improved cohesion among nanoparticles, which resulted in increased electrical properties.