Browse > Article
http://dx.doi.org/10.6111/JKCGCT.2014.24.6.252

Effects of oxygen partial pressure on the properties of indium tin oxide film on PET substrates by RF magnetron sputtering  

Kim, Seon Tae (Department of Nano Fusion Technology, Pusan National University)
Kim, Tae Gyu (Department of Nanomechatronics Engineering, Pusan National University)
Cho, Hyun (Department of Nanomechatronics Engineering, Pusan National University)
Kim, Jin Kon (Department of Nanomechatronics Engineering, Pusan National University)
Abstract
Indium tin oxide (ITO) films with various oxygen partial pressure from 0 to $6{\times}10^{-5}$ Pa were prepared onto polyethylene terephthalate (PET) using RF magnetron sputtering at room temperature. The structural, electrical and optical properties of the grown ITO films were investigated as a function of the oxygen partial pressure. The amorphous nature of the ITO films was dominant at the partial pressure below $1{\times}10^{-5}$ Pa and the degree of crystallinity increased as the oxygen concentration increased further. This structural change comes with the increased carrier concentration and reduction of the electrical resistivity down to $9.8{\times}10^{-4}{\Omega}{\cdot}cm$. The average transmittance (at 400~800 nm) of the ITO deposited on the PET substrates increased as the oxygen partial pressure increased and transmittance above 80 % was achieved with the partial pressure of $4{\times}10^{-5}$ Pa. The results show that the choice of optimal oxygen partial pressure can present improved film crystallinity, the increased carrier concentration, and the enhancement in the electrical conductivity.
Keywords
Indium tin oxide (ITO); PET substrate; Resistivity; Optical transmittance;
Citations & Related Records
연도 인용수 순위
  • Reference
1 L. Hao, X. Diao, H. Xu, B. Gu and T. Wang, "Thickness dependence of structural, electrical and optical properties of indium tin oxide (ITO) films deposited on PET substrates", Appl. Surf. Sci. 254 (2008) 3504.   DOI   ScienceOn
2 D.H. Kim, M.R. Park, H.J. Lee and G.H. Lee, "Thickness dependence of electrical properties of ITO film deposited on a plastic substrate by RF magnetron sputtering", Appl. Surf. Sci. 253 (2006) 609.
3 R.B.H. Tahar, T. Ban, Y. Ohya and Y. Takahashi, "Tin doped indium oxide thin films: Electrical properties", J. Appl. Phys. 83 (1998) 2631.   DOI   ScienceOn
4 I. Hamberg and C.G. Granqvist, "Evaporated sndoped $In_2O_3$ films: Basic optical properties and applications to energy efficient windows", J. Appl. Phys. 60 (1986) R123.   DOI
5 S. Ohno, Y. Kawaguchi, A. Miyamura, Y. Sato, P.K. Song, M. Yoshikawa, P. Frach and Y. Shigesato, "High rate deposition of tin-doped indium oxide films by reactive magnetron sputtering with unipolar pulsing and plasma emission feedback systems", Sci. Technol. Adv. Mater. 7 (2006) 56.   DOI   ScienceOn
6 G.B. Gonzalez, T.O. Mason, J.P. Quintana, O. Warschkow, D.E. Ellis, J.H. Hwang, J. Hodges and J. Jorgensen, "Defect structure studies of bulk and nano-indium-tin oxide", J. Appl. Phys. 96 (2004) 3912.   DOI   ScienceOn
7 P. Thilakan and J. Kumar, "Reactive thermal deposition of indium oxide and tin-doped indium oxide thin films on InP substrates", Thin Solid Films 292 (1997) 50.   DOI   ScienceOn
8 L. Kerkache, A. Layadi, E. Dogheche and D. Remiens, "Physical properties of RF sputtered ITO thin films and annealing effect", J. Phys. D: Appl. Phys. 39 (2006) 184.   DOI   ScienceOn
9 N. Nadaud, N. Lequeux and M. Nanot, "Structural studies of tin-doped indium tin oxide (ITO) and $In_4Sn_3O_12$", J. Solid State Chem. 135 (1998) 140.   DOI   ScienceOn
10 B.H. Lee, I.G. Kim, S.W. Cho and S.H. Lee, "Effect of process parameters on the characteristics of indium tin oxide thin film for flat panel display application", Thin Solid Films 302 (1997) 25.   DOI   ScienceOn
11 S.K. Park, J.I. Han, W.K. Kim and M.G. Kwak, "Deposition of indium-tin-oxide films on polymer substrates for application in plastic-based flat panel displays", Thin Solid Films 397 (2001) 49.   DOI   ScienceOn
12 D.C. Paine, T. Whitson, D. Janiac, R. Beresford, C.O. Yang and B. Lewis, "A study of low temperature crystallization of amorphous thin film indium-tin-oxide", Appl. Phys. 85 (1999) 8445.   DOI