• Title/Summary/Keyword: IT diffusion

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Revisiting the Definitions and the Textbook Descriptions of Dissolution, Diffusion and Effusion (용해, 확산, 분출의 정의와 교과서 서술에 대한 재고찰)

  • Park, Jong-Yoon
    • Journal of The Korean Association For Science Education
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    • v.31 no.6
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    • pp.1009-1024
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    • 2011
  • Previous studies showed that many secondary school students and teachers have difficulties in distinguishing the phenomena of dissolution and diffusion, as well as the phenomena of diffusion and effusion. In this study, currently accepted term definitions of dissolution, diffusion and effusion were searched from the IUPAC Gold Book and the physical chemistry textbooks, and the points to differentiate the definitions were sought. Also, the term definitions of these three phenomena in the secondary school text books and the college general chemistry textbooks were surveyed and compared to the currently accepted definitions. It was found that dissolution is formation of one new phase from mixing two phases, while diffusion is the migration of matter down from the concentration gradient. The "concentration gradient" is considered to be a key point to distinguish diffusion from the dissolution. However, the concentration gradient was not mentioned in the definitions of diffusion in most of the secondary school textbooks and the college general chemistry textbooks. Effusion is differentiated from diffusion by the gas molecules escaping from the container through a tiny hole without collision. The definition of effusion was not found in most of the secondary school textbooks.

Fluorine Effects on CMOS Transistors in WSix-Dual Poly Gate Structure (텅스텐 실리사이드 듀얼 폴리게이트 구조에서 CMOS 트랜지스터에 미치는 플로린 효과)

  • Choi, Deuk-Sung;Jeong, Seung-Hyun;Choi, Kang-Sik
    • Journal of the Institute of Electronics and Information Engineers
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    • v.51 no.3
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    • pp.177-184
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    • 2014
  • In chemical vapor deposition(CVD) tungsten silicide(WSix) dual poly gate(DPG) scheme, we observed the fluorine effects on gate oxide using the electrical and physical measurements. It is found that in fluorine-rich WSix NMOS transistors, the gate thickness decreases as gate length is reduced, and it intensifies the roll-off properties of transistor. This is because the fluorine diffuses laterally from WSix to the gate sidewall oxide in addition to its vertical diffusion to the gate oxide during gate re-oxidation process. When the channel length is very small, the gate oxide thickness is further reduced due to a relative increase of the lateral diffusion than the vertical diffusion. In PMOS transistors, it is observed that boron of background dopoing in $p^+$ poly retards fluorine diffusion into the gate oxide. Thus, it is suppressed the fluorine effects on gate oxide thickness with the channel length dependency.

An Exploratory Study of IT Adoption Factors' Performance: Considering Internal and External factors in SMEs' ERP (IT 도입요소의 성과에 관한 탐색적 연구: 중소기업 ERP의 내.외부 도입요소를 중심으로)

  • Lee, Jong Moo
    • Journal of Korea Society of Digital Industry and Information Management
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    • v.8 no.4
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    • pp.205-215
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    • 2012
  • Due to a rapid change of business environment, many firms are eager to find the competitiveness by information technology adoption and diffusion. In this exploratory study, we examined the applicability of a previously proposed model to evaluate IT competitiveness based on the innovativeness and verified it's propriety with empirical data. As suggested by previous studies, the proposed model considers a variety of corporate and market characteristics concerned with IT adoption, and it consists of several internal and external impacting factors, which have influence on technology diffusion and its performance. For the empirical analysis, the survey data of domestic ERP adoption cases were adopted from 128 small and medium-sized enterprises(: SMEs) in IT and electrical engineering industry, and analyzed by partial least squares(: PLS) - a popular structural modeling and multivariate projection technique to latent variables. The results indicated positive supports for the research model of external and internal IT adoption factors' influences on innovativeness' performances. However, there are a couple of limitations not to show the reliability of selected measurement items and the generality of model proposed in this exploratory study.

Fatigue properties of nitrided titanium using fluidized bed furnace (유동상로를 이용한 질화처리티타늄의 피로강도 특성)

  • Kim, Min-Gun;Ji, Jueng-Keun
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.22 no.1
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    • pp.142-147
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    • 1998
  • Rotary bending fatigue tests were carried out on the nitrided titanium in order to investigate the effect of nitriding layer on fatigue limit. Main results obtained are as follows. (1) The fatigue limit of nitrided pure titanium is remarkably reduced because of enlargement of grain size at high heat treating temperature and high stress field created from the elastic interaction in the compound layer. (2) Further test using specimen which was removed nitrified layer gradually, were also conducted and it was found that by removing the compound layer the fatigue limit recovered as the level of basic material and rather increased by coming of a diffusion layer. Therefore it is concluded that the surface compound layer generated by nitriding treatment reduced the fatigue limit but diffusion layer increased it.

AN OVERLAPPING SCHWARZ METHOD FOR SINGULARLY PERTURBED THIRD ORDER CONVECTION-DIFFUSION TYPE

  • ROJA, J. CHRISTY;TAMILSELVAN, A.
    • Journal of applied mathematics & informatics
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    • v.36 no.1_2
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    • pp.135-154
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    • 2018
  • In this paper, an almost second order overlapping Schwarz method for singularly perturbed third order convection-diffusion type problem is constructed. The method splits the original domain into two overlapping subdomains. A hybrid difference scheme is proposed in which on the boundary layer region we use the combination of classical finite difference scheme and central finite difference scheme on a uniform mesh while on the non-layer region we use the midpoint difference scheme on a uniform mesh. It is shown that the numerical approximations which converge in the maximum norm to the exact solution. We proved that, when appropriate subdomains are used, the method produces convergence of second order. Furthermore, it is shown that, two iterations are sufficient to achieve the expected accuracy. Numerical examples are presented to support the theoretical results. The main advantages of this method used with the proposed scheme are it reduce iteration counts very much and easily identifies in which iteration the Schwarz iterate terminates.

A Diffusion Model for a System Subject to Random Shocks

  • Lee, Eui-Yong;Song, Mun-Sup;Park, Byung-Gu
    • Journal of the Korean Statistical Society
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    • v.24 no.1
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    • pp.141-147
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    • 1995
  • A diffusion model for a system subject to random shocks is introduced. It is assumed that the state of system is modeled by a Brownian motion with negative drift and an absorbing barrier at the origin. It is also assumed that the shocks coming to the system according to a Poisson process decrease the state of the system by a random amount. It is further assumed that a repairman arrives according to another Poisson process and repairs or replaces the system i the system, when he arrives, is in state zero. A forward differential equation is obtained for the distribution function of X(t), the state of the systme at time t, some boundary conditions are discussed, and several interesting characteristics are derived, such as the first passage time to state zero, F(0,t), the probability of the system being in state zero at time t, and F(0), the limit of F(0,t) as t tends to infinity.

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SCHWARZ METHOD FOR SINGULARLY PERTURBED SECOND ORDER CONVECTION-DIFFUSION EQUATIONS

  • ROJA, J. CHRISTY;TAMILSELVAN, A.
    • Journal of applied mathematics & informatics
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    • v.36 no.3_4
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    • pp.181-203
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    • 2018
  • In this paper, we have constructed an overlapping Schwarz method for singularly perturbed second order convection-diffusion equations. The method splits the original domain into two overlapping subdomains. A hybrid difference scheme is proposed in which on the boundary layer region we use the central finite difference scheme on a uniform mesh while on the non-layer region we use the mid-point difference scheme on a uniform mesh. It is shown that the numerical approximations which converge in the maximum norm to the exact solution. When appropriate subdomains are used, the numerical approximations generated from the method are shown to be first order convergent. Furthermore it is shown that, two iterations are sufficient to achieve the expected accuracy. Numerical examples are presented to support the theoretical results. The main advantages of this method used with the proposed scheme is it reduces iteration counts very much and easily identifies in which iteration the Schwarz iterate terminates.

Network Based Diffusion Model (네트워크 기반 확산모형)

  • Joo, Young-Jin
    • Korean Management Science Review
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    • v.32 no.3
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    • pp.29-36
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    • 2015
  • In this research, we analyze the sensitivity of the network density to the estimates for the Bass model parameters with both theoretical model and a simulation. Bass model describes the process that the non-adopters in the market potential adopt a new product or an innovation by the innovation effect and imitation effect. The imitation effect shows the word of mouth effect from the previous adopters to non-adopters. But it does not divide the underlying network structure from the strength of the influence over the network. With a network based Bass model, we found that the estimate for the imitation coefficient is highly sensitive to the network density and it is decreasing while the network density is decreasing. This finding implies that the interpersonal influence can be under-looked when the network density is low. It also implies that both of the network density and the interpersonal influence are important to facilitate the diffusion of an innovation.

Electrical Characteristics of Oxide Layer Due to High Temperature Diffusion Process (고온 확산공정에 따른 산화막의 전기적 특성)

  • 홍능표;홍진웅
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.52 no.10
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    • pp.451-457
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    • 2003
  • The silicon wafer is stable status at room temperature, but it is weak at high temperatures which is necessary for it to be fabricated into a power semiconductor device. During thermal diffusion processing, a high temperature produces a variety thermal stress to the wafer, resulting in device failure mode which can cause unwanted oxide charge or some defect. This disrupts the silicon crystal structure and permanently degrades the electrical and physical characteristics of the wafer. In this paper, the electrical characteristics of a single oxide layer due to high temperature diffusion process, wafer resistivity and thickness of polyback was researched. The oxide quality was examined through capacitance-voltage characteristics, defect density and BMD(Bulk Micro Defect) density. It will describe the capacitance-voltage characteristics of the single oxide layer by semiconductor process and device simulation.

Analysis of n+ emitter properties using Dopant Pastes for Crystalline Silicon Solar Cells (결정질 실리콘 태양전지에 적용하기 위한 Dopant Pastes의 n+ emitter 특성 분석)

  • Lee, Ji-Hun;Cho, Kyeong-Yeon;Choi, Jun-Young;Lee, Soo-Hong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.11a
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    • pp.15-16
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    • 2007
  • The high efficiency and low cost solar cells in order to it applied a dopant pastes diffusion process. The dopant pastes diffusion process which it uses is easily applied in screen-printing solar cells output line. in this paper, it used the Ferro 99-038 phosphorus diffusion pastes source and it analyzed a sheet resistance and a uniformity degree. And it knew the quality of the sheet resistance which it follows in temperature and time condition. The temperature variable it let and it fixed the time in 7 minutes. It will be able to measure the sheet resistance of $40({\Omega}/sq),\;30({\Omega}/sq),\; 20({\Omega}/sq)$. also average uniformity of the sheet resistance was below 5%.

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