• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.5
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• pp.657-663
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• 2016

In this work, a novel silicon (Si) based floating body synaptic transistor (SFST) is studied to mimic the transition from short-term memory to long-term one in the biological system. The structure of the proposed SFST is based on an n-type metal-oxide-semiconductor field-effect transistor (MOSFET) with floating body and charge storage layer which provide the functions of short- and long-term memories, respectively. It has very similar characteristics with those of the biological memory system in the sense that the transition between short- and long-term memories is performed by the repetitive learning. Spike timing-dependent plasticity (STDP) characteristics are closely investigated for the SFST device. It has been found from the simulation results that the connectivity between pre- and post-synaptic neurons has strong dependence on the relative spike timing among electrical signals. In addition, the neuromorphic system having direct connection between the SFST devices and neuron circuits are designed.

• Current Optics and Photonics
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• v.4 no.3
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• pp.161-173
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• 2020

Colloidal quantum dots (QDs) have gained tremendous attention as a key material for highly advanced display technologies. The performance of QD light-emitting diodes (QLEDs) has improved significantly over the past two decades, owing to notable progress in both material development and device engineering. The brightness of QLEDs has improved by more than three orders of magnitude from that of early-stage devices, and has attained a value in the range of traditional inorganic LEDs. The emergence of high-luminance (HL) QLEDs has induced fresh demands to incorporate the unique features of QDs into a wide range of display applications, beyond indoor and mobile displays. Therefore it is necessary to assess the present status and prospects of HL-QLEDs, to expand the application domain of QD-based light sources. As part of this study, we review recent advances in HL-QLEDs. In particular, based on reports of brightness exceeding 10⁵ cd/㎡, we have summarized the major approaches toward achieving high brightness in QLEDs, in terms of material development and device engineering. Furthermore, we briefly introduce the recent progress achieved toward QD laser diodes, being the next step in the development of HL-QLEDs. This review provides general guidelines for achieving HL-QLEDs, and reveals the high potential of QDs as a universal material solution that can enable realization of a wide range of display applications.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1991-1993
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• 1996

This paper describes a standardized micromachinung project (SMP) performed at Seoul National University (SNU). The SNU SMP uses a 3-mask, 2-polysilicon surface micromaching process. The entire process is performed at SNU Inter-University Semiconductor Research Institute(ISRC). In this first SNU SMP attemp, 16 $1cm^2$ cells containing different designs were fabricated.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.9
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• pp.42-47
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• 1998

We have fabricated electron-optical lens for micro E-beam system that can overcome the limitation of current E-beam lithography. Our electron-optical lens consists of multiple silicon electrodes which were fabricated by micromachining technology and assembled by anodic bonding. The assembled system was installed in UHV chamber to observe the emission characteristics of focused electrons by the electro-optical lens. We used STM(Scanning Tunneling Microscope) tip for electron source. By performing lithography with the focused electrons with PMMA(poly-methylmethacrylate) as E-beam resist. We could draw 0.13${\mu}{\textrm}{m}$ nano-scale lines.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.2
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• pp.185-190
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• 2016

A 70-${\AA}$ nanowire field-effect transistor (FET) for sub-10-nm CMOS technology is designed and simulated in order to investigate the impact of an oxide trap on random telegraph noise (RTN) in the device. It is observed that the drain current fluctuation (${\Delta}I_D/I_D$) increases up to a maximum of 78 % due to the single electron trapping. In addition, the effect of various trap positions on the RTN in the nanowire FET is thoroughly analyzed at various drain and gate voltages. As the drain voltage increases, the peak point for the ${\Delta}I_D/I_D$ shifts toward the source side. The distortion in the electron carrier density and the conduction band energy when the trap is filled with an electron at various positions in the device supports these results.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.870-873
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• 2003

We have fabricated a carbon nanotube field emission display(CNT FED) panel with a 2 inch diagonal size by using screen printing method and vacuum in-line sealing technology. The sealing temperature of the panel was around 390 $^{\circ}C$ and the leak test was carried out for 72 hrs after sealing process. When field emission properties of fabricated and sealed CNT FED panel were characterized and compared with those of unsealed panel which was located in vacuum chamber of vacuum level similar with the sealed panel, the sealed panel showed more improved field emission properties.

• Journal of Information Display
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• v.5 no.4
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• pp.18-22
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• 2004

A carbon nanotube field emission display (CNT FED) panel with a 2 inch diagonal size was fabricated through screen printing of a prepared photo-sensitive CNT paste and vacuum in-line sealing technology. After surface treatment of the patterned CNT, only the carbon nanotube tips are uniformly exposed on the surface. The diameter of the exposed CNTs are usually about 20nm. The sealing temperature of the panel is around 390 $^{\circ}C$ and the vacuum level is obtained with $1.4{\times}10^{-5}$torr at the sealing. The field emission properties of the diode type CNT FED panel are characterized. Currently, we are in the process of developing a triode type CNT FED with a self-aligned gate-emitter structure.

• Journal of Information Display
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• v.4 no.3
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• pp.6-11
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• 2003

We have fabricated a carbon nanotube field emission display (CNT-FED) panel with a 2-inch diagonal size by using a screen printing method and vacuum in-line sealing technology. The sealing temperature of the panel was around 390$^{\circ}C$ and the vacuum level was obtained with 1.4x$10^{-5}$torr at the sealing. When the field emission properties of a fabricated and sealed CNT-FED panel were characterized and compared with those of the unsealed panel which was located in a test chamber of vacuum level similar with the sealed panel. As a result, the sealed panel showed similar I-V characteristics with unsealed one and uniform light emission with very high brightness at a current density of 243 ${\mu}A/cm^2$, obtained at the electric field of 10 V/${\mu}m$.

• Progress in Medical Physics
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• v.24 no.3
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• pp.145-153
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• 2013

Stereotactic body radiation therapy (SBRT) is increasingly used to treat spinal metastases. To achieve the highest steep dose gradients and conformal dose distributions of target tumors, intensity-modulated radiation therapy (IMRT) and volumetric-modulated arc therapy (VMAT) techniques are essential to spine radiosurgery. The purpose of the study was to qualitatively compare IMRT and VMAT techniques with International Spine Radiosurgery Consortium (ISRC) contoured consensus guidelines for target volume definition. Planning target volume (PTV) was categorized as TB, $T_{BPT}$ and $T_{ST}$ depending on sectors involved; $T_B$ (vertebral body only), $T_{BPT}$ (vertebral body+pedicle+transverse process), and $T_{ST}$ (spinous process+transverse process). Three patients treated for spinal tumor in the cervical, thoracic, and lumbar region were selected. Eacg tumor was contoured by the definition from the ISRC guideline. Maximum spinal cord dose were 12.46 Gy, 12.17 Gy and 11.36 Gy for $T_B$, $T_{BPT}$ and $T_{ST}$ sites, and 11.81 Gy, 12.19 Gy and 11.99 Gy for the IMRT, RA1 and RA2 techniques, respectively. Average fall-off dose distance from 90% to 50% isodose line for $T_B$, $T_{BPT}$, and $T_{ST}$ sites were 3.5 mm, 3.3 mm and 3.9 mm and 3.7 mm, 3.7 mm and 3.3 mm for the IMRT, RA1 and RA2 techniques, respectively. For the most complicated target $T_{BPT}$ sites in the cervical, thoracic and lumbar regions, the conformity index of the IMRT, RA1 and RA2 is 0.621, 0.761 and 0.817 and 0.755, 0.796 and 0.824 for rDHI. Both IMRT and VMAT techniques delivered high conformal dose distributions in spine stereotactic radiosurgery. However, if the target volume includes the vertebral body, pedicle, and transverse process, IMRT planning resulted in insufficient conformity index, compared to VMAT planning. Nevertheless, IMRT technique was more effective in reducing the maximum spinal cord dose compared to RA1 and RA2 techniques at most sites.

• Journal of the Korean Vacuum Society
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• v.2 no.1
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• pp.23-27
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• 1993

NiSi2(111)을 Si(111) 표면 위에 증착하여 그 구조를 STM으로 연구하였다. 실리사이드는 그 표면이 (1$\times$1)의 구조를 띠고 여분의 trimer를 흡착 분자 구조로 가짐을 관찰하였다. 이 trimer로부터 실리사이드의 두 가지 구조 A, B를 구별할 수 있었다. 표면에 관착된 결함으로부터 표면구조는 내부와 같음을 보였다.