• Journal of the Korean Institute of Telematics and Electronics A
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• v.28A no.1
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• pp.46-51
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• 1991

The new signal process circuit using ISFETs as two input devices of a MOS differential amplifier stage for application to a ISFET biosensor was developed and its operational characteristics simulated. For a single chip integration of ISFETs, developed signal process circuit and metal reference electrode, serial studies including process development and chip layout was carried out.

• Journal of Sensor Science and Technology
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• v.22 no.4
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• pp.281-285
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• 2013

In this study a biosensor was developed by using Drosophila cells expressing a gustatory receptor Gr5a and an ion sensitive field effect transistors (ISFETs) sensor device, which demonstrated significant compatibility with the Drosophila cells expressing Gr5a and their response to sugar. These results suggested that the newly developed cell based biosensor has a potential as a simple and easy screening device for Alzheimer's disease in the future.

• Journal of Sensor Science and Technology
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• v.21 no.2
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• pp.90-95
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• 2012

This paper describes the development of a glucose biosensor based on ion sensitive field effect transistor(ISFET) with a palladium(Pd) modified ion sensing membrane. By adopting Pd as a hydrogen sensitive layer and integrating a screen-printed reference electrode, the sensitivity and stability were considerably improved due to the high permeability and selectivity of the Pd hydrogen selective membrane. This paper suggests a new approach for realizing portable and highly sensitive glucose sensors for diagnosing and treating diabetes mellitus.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.239-239
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• 2013

For more than four decades, ion-sensitive field-effect transistor (ISFET) sensors that respond to the change of surface potential on a membrane have been intensively investigated in the chemical, environmental, and biological spheres, because of their potential, in particular their compatibility with CMOS manufacturing technology. Here, we demonstrate a new type of ISFET with dual-gate (DG) structure fabricated on ultra-thin body (UTB), which highly boosts sensitivity, as well as enhancing chemical stability. The classic ion-sensitive field-effect transistor (ISFET) has been confronted with chronic problems; the Nernstian response, and detection limit with in the Debye length. The super-coupling effects imposed on the ultra thin film serve to not only maximize sensitivity of the DG ISFET, but also to strongly suppress its leakage currents, leading to a better chemical stability. This geometry will allow the ISFET based biosensor platform to continue enhancement into the next decade.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.28A no.12
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• pp.46-52
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• 1991

A new signal process circuit using two ISFETs as the input devices of the MOS differential amplifier stage for an ISFET biosensor has been developed. One chip integration of the newly developed signal process circuit, ISFETs and a Pt quasi-reference electrode has been carried out according to modified LOCOS p-well CMOS process. The fabricated chip showed gains of 0.8 and 1.6, good liniarity in the input-output relationship and very small power dissipation, 4mW. The chip was applied to realize a urea sensor by forming an immobilized urease membrane, using lift-off technique. on the gate of an ISFET. The urea sensor chip showed stable responses in a wide range of urea concentrations.

• Journal of IKEEE
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• v.21 no.4
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• pp.375-380
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• 2017

A differential current-to-time interval converter is presented for current mode sensors. It consists of a ramp voltage generator, a current mode sensor, a reference current source, two current-tunable Schmitt triggers, a one-shot multivibrator, and two logic gates. The design principle is to apply a ramp voltage to each input of the two current-tunable Schmitt triggers whose threshold voltages are proportional to the drain current values of the current mode sensors. A proposed circuit converts a current change in the ISFET biosensor into its equivalent pulse width change. A prototype circuit built using TSMC 0.18 nm CMOS process exhibit a conversion sensitivity amounting to $726.9{\mu}s/pH$ over pH variation range of 2-12 and a linearity error less than ${\pm}0.05%$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.11
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• pp.698-703
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• 2015

In this study, we fabricated the dual gate (DG) ion-sensitive field-effect-transistor (ISFET) with flexible polyimide (PI) extended gate (EG). The DG ISFETs significantly enhanced the sensitivity of pH in electrolytes from 60 mV/pH to 1152.17 mV/pH and effectively improved the drift and hysteresis phenomenon. This is attributed to the capacitive coupling effect between top gate and bottom gate insulators of the channel in silicon-on-transistor (SOI) metal-oxide-semiconductor (MOS) FETs. Accordingly, it is expected that the PI-EG based DG-ISFETs is promising technology for high-performance flexible biosensor applications.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.755-758
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• 2005

This paper describes the novel immunoassay sensing system for a portable clinical diagnosis system. It consists of a bead cage reactor and a CMOS integrated biosensor. It showed the simple and easy antibody coating method on beads by flow-through avidin biotin complex technology in a microfluidic device. It showed just 90 nL sample consumption and good result for the application of alpha feto protein. The bead cage reactor has the role of the antibody coating, antigen binding and enzyme linking for the electrochemical sensing method. The CMOS biosensor consists of ISFET (ion selective field effect transistor) biosensor and temperature sensor for detecting pH that is the byproduct of enzyme reaction. The sensitivity is 8 $kHz/^{\circ}C$ in a temperature sensor and 33 mV/pH in a pH sensor. After filling the 15 um polystyrene beads in bead cage, antibody flowed and reacted to beads. Subsequently, the biotinylated antigen flowed and bound to the antibody and GOD (glucose oxidase)-avidin conjugate flowed and reacted to the biotin of the biotinylated antigen. After this reaction process, glucose solution flowed and reacted to the GOD on beads. The hydrogen was generated by glucose-GOD reaction. And it was detected by the pH sensor.

• Applied Science and Convergence Technology
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• v.23 no.2
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• pp.61-71
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• 2014

A field-effect transistor (FET) is one of the most commonly used semiconductor devices. Recently, increasing interest has been given to FET-based biosensors owing totheir outstanding benefits, which are likely to include a greater signal-to-noise ratio (SNR), fast measurement capabilities, and compact or portable instrumentation. Thus far, a number of FET-based biosensors have been developed to study biomolecular interactions, which are the key drivers of biological responses in in vitro or in vivo systems. In this review, the detection principles and characteristics of FET devices are described. In addition, biological applications of FET-type biosensors and the Debye length limitation are discussed.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.1
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• pp.141-146
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• 2017

In this letter, we propose the use of tunneling field effect transistors (TFET) as a biosensor that detects bio-molecules on the gate oxide. In TFET sensors, the charges of target molecules accumulated at the surface of the gate oxide bend the energy band of p-i-n structure and thus tunneling current varies with the band bending. Sensing parameters of TFET sensors such as threshold voltage ($V_t$) shift and on-current ($I_D$) change are extracted as a function of the charge variation. As a result, it is found that the performances of TFET sensors can surpass those of conventional FET (cFET) based sensors in terms of sensitivity. Furthermore, it is verified that the simultaneous sensing of two different target molecules in a TFET sensor can be performed by using the ambipolar behavior of TFET sensors. Consequently, it is revealed that two different molecules can be sensed simultaneously in a read-out circuit since the multi-sensing is carried out at equivalent current level by the ambipolar behavior.