• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.9
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• pp.1045-1050
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• 2008

In this paper presents a CMOS RF receiver for IR-UWB wireless communications is presented. The impulse radio based UWB receiver adopts the non-coherent demodulation that simplifies the receiver architecture and reduces power consumption. The IR-UWB receiver consists of LNA, envelop detector, VGA, and comparator and the receiver including envelope detector, VGA, and comparator is fabricated on a single chip using $0.18{\mu}m$ CMOS technology. The measured sensitivity of IR-UWB receiver is down to -70 dBm and the BER $10^{-3}$, respectively at data rate 1 Mbps. The current consumption of IR-UWB receiver except external LNA is 5 mA at 1.8 V.

• ETRI Journal
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• v.36 no.3
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• pp.510-513
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• 2014

A Q-band pHEMT image-rejection low-noise amplifier (IR-LNA) is presented using inter-stage tunable resonators. The inter-stage L-C resonators can maximize an image rejection by functioning as inter-stage matching circuits at an operating frequency ($F_{OP}$) and short circuits at an image frequency ($F_{IM}$). In addition, it also brings more wideband image rejection than conventional notch filters. Moreover, tunable varactors in L-C resonators not only compensate for the mismatch of an image frequency induced by the process variation or model error but can also change the image frequency according to a required RF frequency. The implemented pHEMT IR-LNA shows 54.3 dB maximum image rejection ratio (IRR). By changing the varactor bias, the image frequency shifts from 27 GHz to 37 GHz with over 40 dB IRR, a 19.1 dB to 17.6 dB peak gain, and 3.2 dB to 4.3 dB noise figure. To the best of the authors' knowledge, it shows the highest IRR and $F_{IM}/F_{OP}$ of the reported millimeter/quasi-millimeter wave IR-LNAs.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.4
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• pp.277-282
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• 2008

A fully integrated inductorless CMOS impulse radio ultra-wideband (IR-UWB) receiver is implemented using $0.18\;{\mu}m$ CMOS technology for 3-5 GHz application. The UWB receiver adopts the non-coherent architecture, which removes the complexity of RF architecture and reduces power consumption. The receiver consists of inductorless differential three stage LNA, envelope detector, variable gain amplifier (VGA), and comparator. The measured sensitivity is -70 dBm in the condition of 5 Mbps and BER of $10^{-3}$. The receiver chip size is only $1.8\;mm\;{\times}\;0.9\;mm$. The consumed current is 15 mA with 1.8 V supply.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.20 no.7
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• pp.657-663
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• 2009

A fully integrated single ended IR-UWB receiver is implemented using 0.18 ${\mu}m$ CMOS technology. The UWB receiver adopts the non-coherent architecture, which simplifies the RF architecture and reduces power consumption. The receiver consists of single-ended 2-stage LNAs, S2D, envelope detector, VGA, and comparator. The measured results show that sensitivity is -80.8 dBm at 1 Mbps and BER of $10^{-3}$. The receiver uses no external balun and the chip size is only $1.8{\times}0.9$ mm. The consumed current is very low with 13 mA at 1.8 V supply and the energy per bit performance is 23.4 nJ/bit.

• Journal of the Korea Institute of Military Science and Technology
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• v.13 no.6
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• pp.1133-1138
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• 2010

We have developed an imaging radiometer system at W-band. The system consists of lens, reflector, 30-ch receiver array, scanner, and signal processor. One receiver consists of a dielectric rod antenna, a balun, LNA(low noise amplifier) and a detector. The system configuration requirements are described. Finally, we represent radiometer images to obtain through clouds, smoke, dust, and other obstructions which render visible and IR systems ineffective.

• Journal of IKEEE
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• v.17 no.2
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• pp.176-181
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• 2013

This paper presents a CMOS impulse radio ultra-wideband (IR-UWB) receiver implemented using IBM 0.13um CMOS technology for inner/inter-chip wireless interconnection. The IR-UWB receiver is based on the non-coherent architecture which removes the complexity of RF architecture (such as DLL or PLL) and reduces power consumption. The receiver consists of three blocks: a low noise amplifier (LNA) with active balun, a correlator, and a comparator. Simulation results show the die area of the IR-UWB receiver of 0.2mm2, a power gain (S21) of 12.5dB, a noise figure (NF) of 3.05dB, an input return loss (S11) of less than -16.5dB, a conversion gain of 18dB, a NFDSB of 22. The receiver exhibits a third order intercept point (IIP3) of -1.3dBm and consumes 22.9mW of power on the 1.4V power supply.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.37 no.7A
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• pp.545-551
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• 2012

In this paper, K-band multi-channel receiver was designed and fabricated for low noise amplification and down conversion to L-band. The fabricated multi-channel receiver incorporates GaAs-HEMT LNA(Low noise amplifier) which provides less than a 2 dB noise figure, IR(Image Rejection) Filter for rejection of image frequency, IR(Image rejection) mixer to reject a image frequency and improve an IMD(Intermodulation Distortion) characteristic. Test results of the fabricated multi-channel receiver show less than a 3.8 dB noise figure, conversion gain of more than 27dB, and IP1dB(Input 1dB Gain Compression Point) of -9.5 dB and over.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.7
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• pp.138-143
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• 2016

The designed and fabricated millimeter-wave security screening system receives radiation energy from an object and a human body. The imaging system consist of sixteen array antennas, sixteen four-stage LNAs, sixteen detectors, an infrared camera, a CCD camera, reflector, and a focusing lens. This system requires high sensitivity and wide bandwidth to detect the input thermal noise. The LNA module of the system has been measured to have 65.8 dB in average linear gain and 82 GHz~102 GHz in bandwidth to enhance the sensitivity for thermal noise, and to receive it over a wide bandwidth. The detector is used for direct current (DC) output translation of millimeter-wave signals with a zero bias Schottky diode. The lens and front-end of the millimeter-wave sensor are important in the system to detect the input thermal noise signal. The frequency range in the receiving sensitivity of the detectors was 350 to 400 mV/mW at 0 dBm (1 mW) input power. The developed W-band imaging system is effective for detecting and identifying concealed objects such as metal or plastic.