• ETRI Journal
• /
• v.34 no.2
• /
• pp.175-183
• /
• 2012

Conventional synchronization algorithms for impulse radio require high-speed sampling and a precise local clock. Here, a phase-locked loop (PLL) scheme is introduced to acquire and track periodical impulses. The proposed impulse PLL (iPLL) is analyzed under an ideal Gaussian noise channel and multipath environment. The timing synchronization can be recovered directly from the locked frequency and phase. To make full use of the high harmonics of the received impulses efficiently in synchronization, the switching phase detector is applied in iPLL. It is capable of obtaining higher loop gain without a rise in timing errors. In different environments, simulations verify our analysis and show about one-tenth of the root mean square errors of conventional impulse synchronizations. The developed iPLL prototype applied in a high-speed ultra-wideband transceiver shows its feasibility, low complexity, and high precision.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.54 no.5
• /
• pp.232-237
• /
• 2005

In this paper, we fabricated $CO_2$ gas sensor based on the MEMS infrared sensor and characterized its electrical and $CO_2$-sensing properties. The fabricated $CO_2$ gas sensor by MEMS technique has many advanges over NDIR(nondispersive) $CO_2$ sensor such as monolithic fabrication, very high selectivity on $CO_2$, low power consumption and compact system. Microbolometer by surface micromachining was fabricated for gas detector and $CO_2$ filter chip by bulk micromachining was fabricated for signal referencing. By using the proposed and fabricated gas sensor, we are expected to measure $CO_2$ concentration more accurately with high reliability.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2010.06a
• /
• pp.178-178
• /
• 2010

칼코게나이드계 재료를 사용한 비냉각 적외선 센서의 윈도우를 제작하여 그 특성을 조사하였다. 조성을 EDS로 분석한 결과 Ge-Se-Sb로 구성되어 있음을 확인하였다. 두께 2mm인 윈도우 모재를 양면 경연마한 후 코팅 설계치로 8-12um 영역에서 평균 투과도가 95.6%로 나타났다. 이온빔보조증착장치를 이용하여 Ge, ZnS, $YF_3$ 소스로 코팅한 결과 투과도는 동일파장영역에서 약 94%로 나타났다. 칼코게나이드 원재료의 투과도는 약 69%로써 12um 영역 부근에서 강한흡수를 보였다. 코팅면의 거칠기 값(Ra)은 약 1.5 nm로써 매우 매끄러운 면을 얻었으며, 단면 SEM 측정 결과 설계치와 유사한 박막 두께를 얻었다.

• Journal of the Korean Society of Manufacturing Process Engineers
• /
• v.4 no.4
• /
• pp.34-38
• /
• 2005

This is a widespread requirement for low cost lightweight thermal imaging sensors for both military and civilian applications. Today, a large number of uncooled infrared detector developments are under progress due to the availability of silicon technology that enables realization of low cost IR sensor. System prices are continuing to drop, and swelling production volume will soon drive process substantially lower. The feasibility of micromechanical optical and infrared (IR) detection using microcantilevers is demonstrated. Microcantilevers provide a simple Structurefor developing single- and multi-element sensors for visible and infrared radiation that are smaller, more sensitive and lower in cost than quantum or thermal detectors. Microcantilevers coated with a heat absorbing layer undergo bending due to the differential stress originating from the bimetallic effect. This paper reports a micromachined silicon uncooled thermal imager intended for applications in automated process control. This paper presents the design, fabrication, and the behavior of cantilever for thermomechanical sensing.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.8 no.4
• /
• pp.277-282
• /
• 2008

A fully integrated inductorless CMOS impulse radio ultra-wideband (IR-UWB) receiver is implemented using $0.18\;{\mu}m$ CMOS technology for 3-5 GHz application. The UWB receiver adopts the non-coherent architecture, which removes the complexity of RF architecture and reduces power consumption. The receiver consists of inductorless differential three stage LNA, envelope detector, variable gain amplifier (VGA), and comparator. The measured sensitivity is -70 dBm in the condition of 5 Mbps and BER of $10^{-3}$. The receiver chip size is only $1.8\;mm\;{\times}\;0.9\;mm$. The consumed current is 15 mA with 1.8 V supply.

• The Optical Journal
• /
• s.141
• /
• pp.21-23
• /
• 2012

신종플루의 전 세계적 유행과 함께 적외선 광학계는 일반인에게 익숙한 기술이 되었다. 스웨덴에서 최초로 개발된 적외선 카메라는 현재 군수용뿐만 아니라 보안, 의료, 차량, 재난구조 등 다양한 분야에 적용되고 있다. 이런 민간분야 시장 성장에는 핵심부품인 적외선 렌즈와 IR Detecter의 가격 인하가 가장 큰 역할을 하고 있다. 특히 차량용 적외선 카메라의 채용은 관련시장을 폭발적으로 성장시킬 가능성을 인정받고 있으며 이런 흐름은 다시 관련 분야의 가격 인하요인으로 강력히 작용하고 있다. 아래표의 적외선 광학계의 수요 산업군 메가 트렌드(<적외선 수요 산업군> 표)는 자동차, 플랜트, 보안, 소방방재, 방위산업 등 다양한 분야의 적외선 광학관련 수요를 포함하고 있어 향후 주요 산업군으로 부각될 것으로 예상된다. 특히 저가양산이 가능해 다양하게 주목받고 있는 성형방식 적외선 광학렌즈 관련 주요 해외 선진업체의 기술수준은 적외선 원천소재를 제외하고는 국내에도 이미 세계수준의 기술을 보유하고 있으며, IR Detector 관련 기술 역시 냉각식 및 비냉각식 분야에서 세계최고 수준의 원천기술을 보유 중이어서 국내 업체의 양산화 기술이 완성되면 관련 세계 시장 선점이 가능하며 향후 5년이 이를 결정짓는 중요한 시점이 될 것이다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.11b
• /
• pp.558-561
• /
• 2001

Vanadium oxide ($VO_x$) thin films are very good candidate material for uncooled infrared (IR) detectors due to their high temperature coefficient of resistance (TCR) at room temperature. But, the deposition of $VO_x$ thin films showing good electrical properties is very difficult in micro bolometer fabrication process using sacrificial layer removal because of its low process temperature and thickness of thin films less than $1000{\AA}$. This paper presents a new fabrication process of $VO_x$ thin films having high TCR and low resistance. Through sandwich structure of $VO_{x}(100{\AA})/V(80{\AA})/VO_{x}(500{\AA})$ by sputter method and post-annealing at oxygen ambient, we have achieved high TCR more than $-2%/^{\circ}C$ and low resistance less than $10K\Omega$ at room temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.11a
• /
• pp.558-561
• /
• 2001

Vanadium oxide ($VO_{x}$) thin films are very good candidate material for uncooked infrared (IR) detectors due to their high temperature coefficient of resistance (TCR) at room temperature. But, the deposition of $VO_{x}$ thin films showing good electrical properties is very difficult in micro bolometer fabrication process using sacrificial layer removal because of its low process temperature and thickness of thin films less than 1000${\AA}$. This paper presents a new fabrication process of $VO_{x}$ thin films having high TCR and low resistance. Through sandwich structure of $VO_{x}$(100${\AA}$)/V(80${\AA}$)/$VO_{x}$(500${\AA}$) by sputter method and post-annealing at oxygen ambient, we have achieved high TCR more than -2%/$^{\circ}C$ and low resistance less than $10K\Omega$ at room temperature.

• Transactions on Electrical and Electronic Materials
• /
• v.17 no.4
• /
• pp.227-230
• /
• 2016

Zn_xMn_3-xO₄ (0.95≤x≤1.20) specimens were prepared using a conventional solid state reaction method. All specimens were sintered in air at 1,200℃ for 12 h, cooled at a rate of 2℃/min to 800℃, and subsequently quenched to room temperature. We investigated the electrical properties of Zn_xMn_3-xO₄ specimens with various amounts of ZnO for use as IR detectors. At a composition of x≥1.15, the ZnO phase precipitates beside the spinel structure. The electrical resistivity at room temperature, activation energy, responsivity, and detectivity of a Zn_1.10Mn_1.90O₄ specimen are 653.2 kΩ-cm, 0.392 eV, 0.016 V/W, and 7.52×10³ cmHz^1/2/W, respectively.

• Progress in Medical Physics
• /
• v.9 no.1
• /
• pp.55-64
• /
• 1998

In recent, the demand of development of the high dose rate brachytherapy source increased for substitute for Co-60 source by iridium source, since the supplying Co-60 source is very depressed and the high dose rate brachytherapy sources are entirely imported from the abroad. This study investigated the exposure rates and isotropic dose distributions for the Ir-192 source produced from $\^$191/Ir(n,r)$\^$192/Ir by nuclear reactor in Korea Atomic Energy Research Institute. The activity of source was obtained an 1.012 Ci (the initial activity without encapsulation was 2,87Ci) by measurement with encapsuled stainless steel. The exposure rate of provided Ir-192 source was determined on 6.36 ${\pm}$ 0.147 Rm$^2$/h-GBq (2.350 ${\pm}$ 0.054 Rcm$^2$/mCi-hr) within ${\pm}$ 2.2% discrepancy with IC-10 ion chamber (0.14 cc) which was mounted on the acrylic jig to 5, 10 and 20 cm from the center of source. The calculated doses with 22 most significant spectrum lines were corrected with intrinsic efficiency of the germanium detector were compared to measured exposure dose rates within ${\pm}$3.8 % discrepancy. The authors confirmed the high dose rate Ir-192 source could be replaced the long decayed Co-60 source via investigation of the isotropic dose distributions in lateral, source axis and diagonal direction of source center are very closed to within 3% uncertainties. Especially, this exposure rate constant and isotropic dose distribution will be fundamental to build the high dose rate source and develop the computed therapy planning system.