• 대한기계학회논문집A
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• 제39권10호
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• pp.1011-1019
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• 2015

Insulated gate bipolar transistor (IGBT) 소자는 전동차, 항공기 및 전기 자동차에 가장 많이 사용되는 고전압, 고전력용 전력 반도체이다. 그러나 IGBT 전력소자는 동작 시 발열 온도가 매우 높고, 이로 인해, IGBT 소자의 신뢰성 및 성능에 큰 영향을 미치고 있다. 따라서 발열 문제를 해결하기 위한 IGBT 모듈 패키지의 방열 설계는 매우 핵심적인 기술이며, 특히, 소자가 동작 한계 온도에 올라가지 않도록 방열 설계를 적절히 수행하여야 한다. 본 논문에서는 전동차에 사용되는 1200 A, 3.3 kV 급 IGBT 모듈 패키지의 열 특성에 대해 수치해석을 이용하여 분석하였다. IGBT 모듈 패키지에 사용되는 다양한 재료 및 소재의 두께에 대한 영향을 분석하였으며, 실험계획법을 이용한 최적화 설계를 수행하였다. 이를 통하여 열 저항을 최소화하기 위한 최적의 방열 설계 가이드 라인을 제시하고자 하였다.

• 한국철도학회:학술대회논문집
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• 한국철도학회 2008년도 춘계학술대회 논문집
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• pp.1853-1859
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• 2008

IGBT modules are designed for low loss, rugged for all environments and user friendly. Low on state saturation voltage with high switching speed is the primary concerns. In this paper selection of IGBT, module ratings and characteristics are discussed. The IGBT design topic of protection against over voltage and over current are covered. Emphasis on turn off switching, short circuit switching and necessary precautions are dealt. Selection of IGBT device, gate drive power, and its lay out considerations are covered in detail.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2001년도 Proceedings ICPE 01 2001 International Conference on Power Electronics
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• pp.703-707
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• 2001

The demand for protection of power electronic applications has during the last couple of years increased regarding the high-power IGBT modules. Even with an active protection, a high power IGBT still has a risk of exhibiting a violent rupture in the case of a fault if IGBT Fuses do not protect it. By introducing fuses into the circuit this will increase the circuit inductance and slight increase the over-voltage during the turn-off of the diode and the IGBT. It is therefore vital when using fuses that the added inductance is kept at a minimum. This paper discuss three issues regarding the IGBT Fuse protection. First, the problem of adding inductance of existing High-Speed and new Typower fuses in DC-link circuit is treated, second a short discussion of the protection of the IGBT module is done, and finally, the impact of the high frequency loading on the current carrying capability of the fuses is presented.

• Journal of Power Electronics
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• 제2권2호
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• pp.88-94
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• 2002

The demand for protection of power electronic application has during the last couple of vears increased regarding the high-power IGBT modules. Even with an active protection, a high power IGBT still has a risk of exhibiting a violent rupture in the case of a fault if IGBT Fuses do not protect it. By introducing fuses into the circuit this will increase the circuit inductance and slight inductance over-voltage during the turn-off of the diode and the IGBT. It is therefore vital when using fuses that the added inductance is kept at a minimum. This paper discuss three issues regarding the IGBT Fuse protection of adding inductance of existing High-speed and new Typower Fuse protection. First, the problem of adding inductance of exiting High-speed and new Typower Fuse DC-link circuit is treated, second a short discussion of protection of the IGBT module is done, and finally, the impect of the high frwquency loading on the currying capability of the fuses is presented.

• 마이크로전자및패키징학회지
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• 제21권3호
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• pp.7-17
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• 2014

Power electronics modules are semiconductor components that are widely used in airplanes, trains, automobiles, and energy generation and conversion facilities. In particular, insulated gate bipolar transistors(IGBT) have been widely utilized in high power and fast switching applications for power management including power supplies, uninterruptible power systems, and AC/DC converters. In these days, IGBT are the predominant power semiconductors for high current applications in electrical and hybrid vehicles application. In these application environments, the physical conditions are often severe with strong electric currents, high voltage, high temperature, high humidity, and vibrations. Therefore, IGBT module packages involves a number of challenges for the design engineer in terms of reliability. Thermal and thermal-mechanical management are critical for power electronics modules. The failure mechanisms that limit the number of power cycles are caused by the coefficient of thermal expansion mismatch between the materials used in the IGBT modules. All interfaces in the module could be locations for potential failures. Therefore, a proper thermal design where the temperature does not exceed an allowable limit of the devices has been a key factor in developing IGBT modules. In this paper, we discussed the effects of various package materials on heat dissipation and thermal management, as well as recent technology of the new package materials.

• Journal of Power Electronics
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• 제13권4호
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• pp.584-591
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• 2013

In this paper, a hybrid booster power module with Si IGBT and Silicon Carbide (SiC) Schottky Barrier Diode (SBDs) is presented. The switching characteristics of the hybrid booster module are compared with commercial Silicon IGBT/Si PIN diode based modules. We applied the booster power module into a non-isolated on board vehicle charger with a simple buck-booster topology. The performances of the on-vehicle charger are analyzed and measured with different power modules. The test data is measured in the same system, at the same points of operation, using the conventional Si and hybrid Si/SiC power modules. The measured power conversion efficiency of the proposed on-vehicle charger is 96.4 % with the SiC SBD based hybrid booster module. The conversion efficiency gain of 1.4 % is realizable by replacing the Si-based booster module with the Si IGBT/SiC SBD hybrid boost module in the 6.6 kW on-vehicle chargers.

• Journal of Power Electronics
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• 제16권5호
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• pp.1843-1850
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• 2016

This study focused on predicting the fatigue life of an insulated gate bipolar transistor (IGBT) power module for electric locomotives. The effects of different wiring technologies, including aluminum wires, copper wires, aluminum ribbons, and copper ribbons, on solder fatigue life were investigated to meet the high power requirement of the IGBT module. The module's temperature distribution and solder fatigue behavior were investigated through coupled electro-thermo-mechanical analysis based on the finite element method. The ribbons attained a chip junction temperature that was 30℃ lower than that attained with conventional round wires. The ribbons also exhibited a lower plastic strain in comparison with the wires. However, the difference in plastic strain and junction temperature among the different ribbon materials was relatively small. The ribbons also exhibited different crack propagation behaviors relative to the wires. For the wires, the cracks initiated at the outmost edge of the solder, whereas for the ribbons, the cracks grew in the solder layer beneath the ribbons. Comparison of fatigue failure areas indicated that ribbon bonding technology could substantially enhance the fatigue life of IGBT modules and be a potential candidate for high power modules.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2017년도 전력전자학술대회
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• pp.549-561
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• 2017

• 전력전자학회:학술대회논문집
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• 전력전자학회 2011년도 전력전자학술대회
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• pp.287-289
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• 2011

본 논문은 인피니언 테크놀로지스의 RC-IGBT (Reverse Conducting Isolated Gate Bipolar Transistor)와 SOI 드라이브 IC(Integrated Circuit)를 사용한 DIL(Dual-In-Line) 구조의 저전력 모듈인 CIPOS TM (Control Integrated POwer System) 제품을 소개한다. 이 전력 모듈은 최적의 게이트 구동회로, 트렌치 필드스톱의 RC-IGBT를 사용하여 기존의 IGBT 와 Diode를 사용하는 구조에서 최소화 된 패키지 크기를 사용하여 높은 효율을 구현할 수 있다. 본 논문을 통하여 인버터의 어플리케이션에 적합하게 설계된 전력모듈에 대한 소개와 그 특징 및 시스템 구성을 위한 고려사항에 대하여 기술하였다.

• Journal of Power Electronics
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• 제9권3호
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• pp.464-471
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• 2009

This paper introduces a new Motion-$SPM^{TM}$ (Smart Power Modules) module in Single In-line Package (SIP), which is a fully optimized intelligent integrated IGBT inverter module for up to 1kW low power motor drive applications. This module offers a sophisticated, integrated solution and tremendous design flexibility. It also takes advantage of pliability for the arrangement of heat-sink due to two types of lead forms. It comes to be realized by employing non-punch-through (NPT) IGBT with a fast recovery diode and highly integrated building block, which features built-in HVICs and a gate driver that offers more simplicity and compactness leading to reduced costs and high reliability of the entire system. This module also provides technical advantages such as the optimized cost effective thermal performances through IMS (Insulated Metal Substrate), the high latch immunity. This paper provides an overall description of the Motion-$SPM^{TM}$ in SIP as well as actual application issues such as electrical characteristics, thermal performance, circuit configurations and power ratings.