• Fire Science and Engineering
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• v.10 no.2
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• pp.28-39
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• 1996

A recently developed electro-thermal simulation methodology is used to analyze the behavior of a PWM(Pulse-Width-Modulated) voltage source inverter which uses IGBT(Insulated Gate Bipolar Transistor) as the switching devices. In the electro-thermal network simulation methdology, the simulator solves for the temperature distribution within the power semiconductor devices(IGBT electro-thermal model), control logic circuitry, the IGBT gate drivers, the thermal network component models for the power silicon chips, package, and heat sinks as well as the current and voltage within the electrical network. The thermal network describes the flow of heat form the chip surface through the package and heat sink and thus determines the evolution of the chip surface temperature used by the power semiconductor device models. The thermal component model for the device silicon chip, packages, and heat sink are developed by discretizing the nonlinear heat diffusion equation and are represented in component from so that the thermal component models for various package and heat sink can be readily connected to on another to form the thermal network.

• KIEE International Transaction on Electrical Machinery and Energy Conversion Systems
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• v.4B no.2
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• pp.73-79
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• 2004

For the global microwave market, high RF power or deluxe model is applying for inverter gradually. In this paper, 120[V]/1200[W] high power inverter is proposed and verified by an optimized design of PFM type. Especially the steady power output control was fulfilling at ＋/－ 10[％] input voltage variation.

• Proceedings of the KSR Conference
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• 2002.10a
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• pp.580-584
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• 2002

This paper proposes an experimental study on the traction system of rubber tired AGT (Automated Guideway Transit). IGBT VVVF inverter is developed for 1C2M propulsion system of AGT, and it consists of inverter stack, gate control unit, control unit, and interface unit. The combination test was carried out to prove the performance of inverter, and test results show that the developed inverter is excellent.

• Proceedings of the KIPE Conference
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• 2003.07a
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• pp.430-433
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• 2003

IGBTS are widely used for the industrial inverters in the mid power range at low voltage (440V$\~$660V) application. Advantageous features of the device are simple gate drive and high speed switching capability. Due to these advantages the application of IGBTS is enlarging into the high power application. However, to increase the power handling capacity at lower input voltage level, the current rating in each bridge arm must be enlarged. Therefore the parallel operation of IGBT devices is essentially needed. This paper describes the feasible parallel structures of the power circuit for the mid & the high power inverters and introduces the important design condition for the parallel operation of IGBT devices. To verify feasibility of the IGBT parallel operation, the feature of several IGBT devices (EUPEC, SEMIKRON's IGBT) are investigated and the power stacks are implemented and tested with these devices. The experimental results show the good characteristics for the parallel operation of IGBTS.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.4
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• pp.369-378
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• 1992

This paper proposes a utility parallel processing inverter system, which consists of a voltage source PWM inverter, isolation transformer and a reactor linking the inverter to utility line. This system realizes following functions : (1) voltage phase frequency and amplitude synchronization between inverter and utility line at stand-alone mode. (2) current phase synchronization between inverter and load at parallel mode. Therefore, despite sudden increase in load current over setting point at stand-alone mode, inverter system can be transferred into parallel mode immediately without transient current. Furthermore, high frequency(18KHz) PWM control and sinusoidal filtering improve the inverter output waveform by eliminating high order harmonic components as well as low order. As a switching device, IGBT is used for high frequency switching and large current capacity.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2007.05a
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• pp.473-477
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• 2007

The development of advanced Insulated Gate Bipolar Transistor(IGBT)has enabled high-frequency switching operation and has improved the performance of PWM inverters for motor drive. However, the high rate of dv/dt of IGBT has adverse effects on motor insulation stress. In many motor drive applications, the inverter and motor are separated and it requires long motor feds. The long cable contributes high frequency ringing at the motor terminal and it results in hight surge voltage which stresses the motor insulation. The inverter output filter and RDC snubber are conventional method which can reduce the surge voltage. In this paper, we propose the new low loss snubber to reduce the motor terminal surge voltage. The snubber consists of the series connection of charging/discharging capacitor and the voltage-clamped capacitor. At IGBT turn-off, the snubber starts to operate when the IGBT voltage reaches the voltage-clamped level. Since dv/dt is decreased by snubber operating, the peak level of the surge voltage can be reduced. Also the snubber operates at the IGBT voltage above the voltage-clamped level, the snubber loss is largely reduced comparing with RDC snubber. The proposed snubber enables to reduce the motor terminal surge voltage with low loss.

• Proceedings of the KIEE Conference
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• 1991.07a
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• pp.466-470
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• 1991

In this paper, full bridge inverter with IGBT is proposed. By Controlling phase angle difference between 2 arms, PWM controlled high frequency link inverter has VVVF capability. For the simplicity, flexibility and compactness of control circuit, 16 bit single chip microcontroller 8797 BH is used and its characteristic is examined through experiment.

• Proceedings of the KIPE Conference
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• 1999.07a
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• pp.443-447
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• 1999

The AC drive systems of a voltage source inverter and an induction motor. The inverter non linearity caused by the turn on/off time dependency of the current level in the switching IGBT is described in the first part of this paper. To improve the low-speed drive characteristics, accurate applied voltage calculation is proposed under considerations of the compensations for the quantization error in the digital controller, the forward voltage drop of switching drives and the dead time of the inverter. The experimental studies show the improved drive characteristics.

• Proceedings of the KIEE Conference
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• 1996.07a
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• pp.464-466
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• 1996

IGBT devices have the best features of both power MOSFETs and power bipolar transistors, i.e., efficient voltage gate drive requirements and high current density capability. When designing circuit and systems that utilize IGSTs or other power semiconductor devices, circuit simulations are needed to examine how the devices affect the behavior of the circuit. The IGBT model in this paper is verified by comparing the results of the model with experimented results for various circuit operating conditions. The model performs well and describes experimented results accurately for the range of static and dynamic condition in which the device is intended to be operated.

• Proceedings of the KIPE Conference
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• 1996.06a
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• pp.63-66
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• 1996

An micro model for the power insulated Gate Bipolar Transistor(IGBT) is developed. The model consistently described the IGBT steady-state current-voltage characteristics and switching transient current and voltage waveform for all loading conditions. The model is based on the equivalent circuit of a MOSFET with supplies the base current to a low-gain, high-level injection, bipolar transistor with its base virtual contact at the collector and of the base. Model results are compared with measured turn-on and turn-off waveform for different drive, load, and feedback circuits.