• Journal of Power Electronics
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• 제16권2호
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• pp.786-797
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• 2016

This paper describes the design and development of a novel semiconductor-based solid-state switch for damped oscillating voltage test system. The proposed switch is configured as two identical series-connected switch stacks, each of which comprising 10 series-connected IGBT function units. Each unit consists of one IGBT, a gate driver, and an auxiliary voltage sharing circuit. A single switch stack can block 20 kV-rated high voltage, and two stacks in series are proven applicable to 30 kV-rated high voltage. The turn-on speed of the switch is approximately 250 ns. A flyback topology-based power supply system with a front-end power factor correction is built for the drive circuit by loosely inductively coupling each unit with a ferrite core to the primary side of a power generator to obtain the advantages of galvanic isolation and compact size. After the simulation, measurement, and estimation of the parasitic effect on the gate driver, a prototype is assembled and tested under different operating regimes. Experimental results are presented to demonstrate the performance of the developed prototype.

• 한국전기전자재료학회논문지
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• 제33권3호
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• pp.177-180
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• 2020

This paper focuses on the 1,200-V level reverse conducting-insulated gate bipolar transistor (RC-IGBT). The structure of the RC-IGBT has an n+ collector at the collector terminal. The breakdown voltage, V_th, V_ce-sat, and turn-off time, and the electrical characteristics of a field-stop IGBT (FS-IGBT) and RC-IGBT are compared and analyzed using simulations. Based on the results, the RC-IGBT obtained a turn-off time of 320.6 ㎲ and a breakdown voltage of 1,720 V, while the FS-IGBT obtained a turn-off time of 742.2 ㎲ and a breakdown voltage of 1,440 V. Therefore, RC-IGBTs have faster on/off transitions and a higher breakdown voltage, which can reduce the size of the element.

• 한국전기전자재료학회논문지
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• 제19권10호
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• pp.907-911
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• 2006

In this paper, we propose a new structure that improves the on-state voltage drop and switching speed in Insulated Gate Bipolar Transistors(IGBTs), which can be widely used in high voltage semiconductors. The proposed structure is unique in that the collector area is divided by $SiO_2$, whereas the conventional IGBT has a planar P+ collector structure. The process and device simulation results show remarkably improved on-state and switching characteristics. Also, the current and electric field distribution indicate that the segmented collector structure has increased electric field near the $SiO_2$ corner, which leads to an increase of electron current. This results in a decrease of on-state resistance and voltage drop to $30%{\sim}40%$. Also, since the area of the P+ region is decreased compared to existing structures, the hole injection decreases and leads to an increase of switching speed to 30 %. In spite of some complexity in process procedures, this structure can be manufactured with remarkably improved characteristics.

• 제어로봇시스템학회논문지
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• 제20권7호
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• pp.756-759
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• 2014

DC/DC converters are commonly used to generate regulated DC output voltages with high-power efficiencies from different DC input sources. The converters can be applied in the regenerative braking of DC motors to return energy back to the supply, resulting in energy savings for the systems at periodic intervals. The fundamental converter studied here consists of an IGBT (Insulated Gate Bipolar mode Transistor), an inductor, a capacitor, a diode, a PWM-IC (Pulse Width Modulation Integrated Circuit) controller with oscillator, amplifier, and comparator. The PWM-IC is a core element and delivers the switching waveform to the gate of the IGBT in a stable manner. Display of the DC/DC converter output depends on the IGBT's changes in the threshold voltage and PWM-IC's pulse width. The simulation was conducted by PSIM software, and the hardware of the DC/DC converter was also implemented. It is necessary to study the fact that the output voltage depends on the duty rate of D, and to compare the output of experimental result with the theory and the simulation.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 하계학술대회 논문집 B
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• pp.1126-1128
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• 2002

In proportion to the development of various cultural contents industry, although the lighting tools with advanced control system are needed, the fields of the lighting tools are not competitive in techniques because they are limited in small businesses and have been lost their markets to foreign companies in the high value added industry. Accordingly, the technique that is better than current lighting tools is needed urgently. So, for the new lighting tools, this paper presents a new dimming method using IGBT(Insulated Gate Bipolar Transistor) devices. There are three procedures in this study. For the first, the authors verify superiority of IGBT Dimmer with simulation using EMTDC in former step for development of IGBT dimmer. Secondly, the authors made IGBT dimmer directly with the basis of simulation results. For the last, the efficiency, the Total Harmonic Distortion(THD) current, temperature characteristic, noise characteristic, voltage drop, heat losses between the IGBT dimmer and the Thyristor dimmer that is being used popularly in the industries the stages, and the theaters were tested and compared..

• 디지털콘텐츠학회 논문지
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• 제18권6호
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• pp.1193-1198
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• 2017

본 논문에서 개발된 IGBT 구조는 DC 송배전을 위한 고전력 스위치 반도체로서 사용되며, 빠른 스위칭 속도 및 개선된 항복전압 특성을 확보하여, 향후 신재생 장거리 DC 송전을 위한 중요한 전자 소자로서 이용될 것이 기대되고 있다. 새로운 타입의 차세대 전력 반도체로서, 스위칭 속도를 향상시키면서 동시에 항복 전압의 특성을 개선시켜, 전력 손실 특성을 줄이도록 설계되었고, 높은 전류 밀도의 장점을 동시에 획득 가능하다. 이러한 개선된 특성은 Planar IGBT의 N-drift 영역에 $SiO_2$를 추가로 도입함으로서 얻어지며, Sentaurus TCAD 시뮬레이션 툴을 사용하여, 비교 분석하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 춘계학술대회 논문집 전력기술부문
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• pp.194-196
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• 2001

Light dimming is based on adjusting the voltage which gets to the lamp. Light dimming has been possible for many decades by using adjustable power resistors and adjustable transformers. The power electronics have proceeded quietly since 1960. Between 1960-1970 thyristors and triacs came to market. Using those components it was quite easy to make small and inexpensive light dimmers which have goof efficiency. This type of electronic light dimmers became available after 1970 and are nowadays used in very many locations like homes, restaurants, conference rooms and in stage lighting. But the problem of thyristor dimmer have been that it has poor efficiency and voltage drop. Recently IGBT(Insulated Gate Bipolar Transistor) control is a new way to do light dimming for improving this problems. IGBT dimmer has many other advantages over traditional thyristor dimmer there are no huge current spikes and EMI caused by turn on Using IGBT it is possible to make the turn-off rate relatively slot to achieve quite operations in terms of EMI and acoustical or incandescent lamp filament noise. For the development of IGBT dimmer. This paper shows the effects of IGBT dimmer compared with thyristor dimmer through a simulation using EMTDC.

• 한국전기전자재료학회논문지
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• 제13권5호
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• pp.371-375
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• 2000

In this paper a new conductivity modulated power transistor called the Lateral Insulated Gated Bipolar Transistor which included n+ ring and p-channel gate is presented. A new lateral IGBT structure is proposed to suppress latch-up and to improve turn off time by imploying n+ ring and p-channel gate and verified by MEDICI. The simulated I-V characteristics at $V_{G}$=15V show that the latch up occurs at $V_{A}$=18V and 6.9$\times$10$^{-5}$ A/${\mu}{\textrm}{m}$ for the proposed LIGBT while the conventional LIGBT latches at $V_{A}$=1.3V and 1.96${\mu}{\textrm}{m}$10$^{-5A}$${\mu}{\textrm}{m}$. It is shown that turn off characteristic of new LIGBT is 8 times than that of conventional LIGBT. And noble LIGBT is not n+ buffer layer because that It includes p channel gate and n+ ring. Therefore Mask for the buffer layer isn’t needed. The concentration of n+ ring is and the numbers of n+ ring and p channel gate are three for the optimal design.n.n.n.n.

• Journal of Power Electronics
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• 제16권2호
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• pp.769-777
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• 2016

This work focuses on current sharing between punch-through insulated gate bipolar transistors (IGBTs) connected in parallel and evaluates the mechanisms that allow overall current balancing. Two different control strategies are presented. These strategies are based on the modification of transistor gate-emitter control voltage V_GE by using an active gate driver circuit. The first strategy relies on the calculation of the average value of the current flowing through all parallel-connected IGBTs. The second strategy is proposed by the authors on the basis of a current cross reference control scheme. Finally, the simulation and experimental results of the application of the two current sharing control algorithms are presented.

• Journal of Power Electronics
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• 제16권2호
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• pp.532-541
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• 2016

A single-phase asymmetrical cascaded multilevel inverter is introduced with the goal of increasing power quality with the reduction of power in insulated-gate bipolar transistor (IGBT) switches. In the present work, the proposed inverter topology is analyzed and generalized with respect to different proposed algorithms for choosing different voltage source values. To prove the advantages of the proposed inverter, a case study involving a 17-level inverter is conducted. The simulation and experimental results with reduced THD are also presented and compared with the MATLAB/SIMULINK simulation results. Finally, the proposed topology is compared with different multilevel inverter topologies available in the literature in terms of the number of IGBT switches required with respect to the number of levels generated in the output of inverter topologies.