• 제목/요약/키워드: IC fabrication

검색결과 158건 처리시간 0.022초

6H-SiC MOSFET과 디지털 IC 제작 (Fabrication of 6H-SiC MOSFET and Digital IC)

  • 김영석;오충완;최재승;송지헌;이장희;이형규;박근형
    • 한국전기전자재료학회논문지
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    • 제16권7호
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    • pp.584-592
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    • 2003
  • 6H-SiC MOSFETs and digital ICs have been fabricated and characterized. PMOS devices are fabricated on an n-type epilayer while the NMOS devices are fabricated on implanted p-wells. NMOS and PMOS devices use a thermally grown gate oxide. SiC MOSFETs are fabricated using different impurity activation methods such as high temperature and newly proposed laser annealing methods. Several digital circuits, such as resistive road NMOS inverters, CMOS inverters, resistive road NMOS NANDs and NORs are fabricated and characterized.

HTS tape의 Pitch에 따른 임계전류 및 교류손실 특성 (Critical Current and AC loss Characteristics with Pitch of HTS tape)

  • 김해준;심기덕;김재호;김석호;조전욱
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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    • pp.265-266
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    • 2006
  • Superconductor is developed for applications in high-power devices such as power-transmission cables, transformers, motor and generators. In such applications, HTS tapes are subjected to various kinds of stress or strain. In the fabrication of the devices, the critical current (Ic) of the high temperature superconductor degrades due to many reasons including the tension applied by bending, twist and thermal contraction. In particular manufactured HTS cable, we need pitch angle controls. This paper is analyzed that Ic characteristics is changed pitch angle of HTS tape. These results will amount the most important basis data in HTS cable.

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나노 임프린트 리소그라피에 의한 마스터 복제 공정 (Fabrication of Master Replication by Nanoimprint Lithography)

  • 정명영
    • 대한기계학회:학술대회논문집
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    • 대한기계학회 2003년도 춘계학술대회
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    • pp.1078-1082
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    • 2003
  • A feasibility study for the fabrication of master replication with nanostructures by Nanoimprint Lithography (NIL) was investigated for application of polymer Photonic Bandgap (PBG) devices used in photonic IC. Large area gratings of $9{\times}15(mm^2)$ with p = 400 nm was successfully embossed on PMMA on silicon wafer and the embossing parameters (temperature, pressure, time) were established. A precise control of $O_2$ plasma Reactive Ion Etching (RIE) process time allowed window opening over the whole area despite the presence of wafer bending. Master replication with aspect ratio 1 was successfully fabricated, but master replication with aspect ratio 3 needs to optimize parameters. All replications were done in a NIL process.

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광모듈 패키지용 Window 의 Metallization Pattern 제작 및 특성 평가 (Fabrication and Characterization of Window Metallization Pattern for Optical Module Package)

  • 조현민;단성백;류헌위;강남기
    • 한국마이크로전자및패키징학회:학술대회논문집
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    • 한국마이크로전자및패키징학회 2003년도 기술심포지움 논문집
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    • pp.239-242
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    • 2003
  • Optical module package is a hermetic metal-ceramic package for carrying optical IC. In case of LD(laser diode) module, window is used for both the path of optical signal and hermetic sealing of package. So, window has the metallization pattern on the surface for brazing process with package wall. In this study, several method were investigated for metallization. Thin film, thick film and mixed method were used for fabrication of metallization pattern. After brazing process, hermeticity and adhesion strength were tested for characterization of metallization pattern.

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10-Gb/s 광통신시스템을 위한 GaAs HBT IC의 설계 및 제작 (Design and fabrication of GaAs HBT ICs for 10-Gb/s optical communication system)

  • 박성호;이태우;김영석;기현철;송기문;박문평;평광위
    • 전자공학회논문지D
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    • 제34D권3호
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    • pp.52-59
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    • 1997
  • Design and performance of principal four ICs for the 10-Gb/s optical communication system are presented. AlGaAs/GaAs HBTs are basic devices to implement a laser diode driver, apre-amplifier, and a limiting amplifier, and GaInP/GaAs HBTs are used for an AGC amplifier. We fbricated 11.5-GHz LD driver, a pre-amplifier, and a limiting amplifier, an dGaInP/GaAs HBTs are used for an AGC amplifier. We fabricated LD deriver, 10.5 GHz pre amplifier, 7.2 GHz AGC amplifier, and 10.3 GHz limiting amplifier, optimized circuit design and the stabilized MMIC fabrication process.

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FIB를 이용한 DLC소재의 가공공정에 관한 연구 (A Study on the Machining Characteristic of DLC Coated Mold Material Using FIB)

  • 홍원표;최병열;강은구;이석우;최헌종
    • 대한기계학회논문집A
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    • 제33권3호
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    • pp.224-230
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    • 2009
  • FIB has been commonly used as a very powerful tool in the semiconductor industry. It is mainly used for mask repair, device correction, failure analysis and IC error correction, etc. Currently, FIB is not being applied to the fabrication of the micro and nano-structured mold, because of low productivity. And also sputtering rate has been required to fabricate 3D shape. In the paper, we studied the FIB-Sputtering rate according to mold materials. And surface roughness characteristics had been analysed for micro or nano mold fabrication. Si wafer, Glassy Carbon, STAVAX and DLC that have been normally considered as good micro or nano mold materials were used in the study.

주축 상태 모니터링 용 광파이버 변위센서 제작 및 성능평가 (Fabrication and Performances Tests of the Optical Fiber Position Sensor for Application to Spindle State Monitoring)

  • 신우철;홍준희;박찬규
    • 한국공작기계학회논문집
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    • 제14권6호
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    • pp.37-44
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    • 2005
  • This paper presents fabrication techniques of the optical fiber position sensor (or spindle state monitoring. These include selection of components such as optical fibers, a laser-diode, a photo-diode, and op-amp IC of the signal process circuit. We also describe electric runout problem. The fabricated sensor has a linearity of $1.7\%$ FSO in the air gap range $0.1\~0.6mm$, a resolution of $0.37{\mu}m$ and a bandwidth of 6.3kHz. Finally, we have successfully operated a magnetic bearing spindle system using the sensors.

대형 빌렛 제조에 의한 Nb$_3$Sn 초전도 선재의 가공 및 특성 연구 (Fabrication and properties of Nb$_3$Sn superconducting wire from large billet stage)

  • 하동우;오상수;하홍수;이남진;권영길;류강식
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 하계학술대회 논문집
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    • pp.806-809
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    • 2000
  • A key technology for achieving commercial Nb$_3$Sn superconducting wires may be driven from fabrication Process of big-scale billets. Sub-element billet with diameter of 200 mm was designed and fabricated. This billet was hot-extruded and drawn. Cu stabilizer tube, Nb barrier tube and 19 sub-elements inserted Sn core were composed for strand. There was no breakage in the strand that was constituted with annealed sub-element. It was need that billet had to treat HIP because of remove of voids and goad contact between Cu and Nb filaments. Ta wound sheet was better than Ta tube thor barrier in the strand. Ic of the Nb$_3$Sn wire at 127, 4.2K was over than 120 A.

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A CMOS Temperature Control Circuit for Crystal-on-Chip Oscillator

  • Park, Cheol-Young
    • 한국정보기술응용학회:학술대회논문집
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    • 한국정보기술응용학회 2005년도 6th 2005 International Conference on Computers, Communications and System
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    • pp.103-106
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    • 2005
  • This paper reports design and fabrication of CMOS temperature sensor circuit using MOSIS 0.25um CMOS technology. The proposed circuit has a temperature coefficient of $13mV/^{\circ}C$ for a wide operating temperature range with a good linearity. This circuit may be applicable to the design of one-chip IC where quartz crystal resonator is directly mounted on CMOS oscillator chips.

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Fabrication of 250 m Class Bi-2223/Ag HTS Tapes

  • Ha, H.S.;Oh, S.S.;Ha, D.W.;Jang, H.M.;Kim, S.C.;Song, K.J.;Park, C.;Kwon, Y.K.;Ryu, K.S.
    • 한국초전도학회:학술대회논문집
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    • 한국초전도학회 2001년도 High Temperature Superconductivity Vol.XI
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    • pp.74-74
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    • 2001
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