Journal of the Korean Institute of Telematics and Electronics D (전자공학회논문지D)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Design and fabrication of GaAs HBT ICs for 10-Gb/s optical communication system

10-Gb/s 광통신시스템을 위한 GaAs HBT IC의 설계 및 제작

  • 박성호 (한국전자통신연구원 화합물반도체연구부) ;
  • 이태우 (한국전자통신연구원 화합물반도체연구부) ;
  • 김영석 (충북대학교 전지전자공학부) ;
  • 기현철 (경원대학교 전자공학과) ;
  • 송기문 (건국대학교 응용물리학과) ;
  • 박문평 (한국전자통신연구원 화합물반도체연구부) ;
  • 평광위 (한국전자통신연구원 화합물반도체연구부)
  • Published : 1997.03.01
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Abstract

Design and performance of principal four ICs for the 10-Gb/s optical communication system are presented. AlGaAs/GaAs HBTs are basic devices to implement a laser diode driver, apre-amplifier, and a limiting amplifier, and GaInP/GaAs HBTs are used for an AGC amplifier. We fbricated 11.5-GHz LD driver, a pre-amplifier, and a limiting amplifier, an dGaInP/GaAs HBTs are used for an AGC amplifier. We fabricated LD deriver, 10.5 GHz pre amplifier, 7.2 GHz AGC amplifier, and 10.3 GHz limiting amplifier, optimized circuit design and the stabilized MMIC fabrication process.

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