• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.10
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• pp.7-14
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• 2008

In this paper, we designed the HVIC(High Voltage Gate Driver IC) which has improved noise immunity characteristics and high driving capability. Operating frequency and input voltage range of the designed HVIC is up to 500kHz and 650V, respectively. Noise protection and schmitt trigger circuit is included in the high-side level shifter of designed IC which has very high dv/dt noise immunity characteristic(up to 50V/ns). And also, rower dissipation of high-side level shifter with designed short-pulse generation circuit decreased more that 40% compare with conventional circuit. In addition, designed HVIC includes protection and UVLO circuit to prevent cross-conduction of power switch and sense power supply voltage of driving section, respectively. Protection and UVLO circuit can improve the stability of the designed HVIC. Spectre and Pspice circuit simulator were used to verify the operating characteristics of the designed HVIC.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.22 no.10
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• pp.2282-2291
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• 1997

This paper describes an IC design for the HCR protocol which is designed to accomodata both real and non-real time data for high-speed multimedia services. The designed HCR IC is perfectly compatible with the conventional ATM IC's and physical layer IC's. The standard UTOPIA interface is adopted. Simulation results show that the proposed HCR IC operates very well according to the priority and the quota state of the real and non-real time data. The proposed HCR IC can be merged into the conventional ATM IC's without any modification and will be useful for multimedia service applications.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.4
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• pp.269-274
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• 2004

Current delivery system, in which the analog current produced by a unique DAC circuit is stored into a current-memory circuit and delivered in a time-divided sequence, shows variation of output current as low as 4% in a current source data-driver IC for AM-OLED driven by a current-programmed method without any fuse repairing after fabrication. This driver IC has 54 outputs and can sink constant current as low as 3 ${\mu}A$ with 6-bit analog levels. Such a low current level without variation can hardly be obtained by an ordinary MOS transistor because the current level is in the sub-threshold region and changes exponentially with threshold voltage variation. Thus we adopted a current mirror circuit composed of bipolar transistors to supply well-controlled current within a nano-ampere range.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.1
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• pp.13-17
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• 2013

In this paper, we designed a charge pump circuit using level shifter for LED driver IC. The designed circuit makes the 15 V output voltage from the 5 V input in condition of 50 kHz switching frequency. The prototype chip which include the proposed charge pump circuit and its several internal sub-blocks such as oscillator, level shifter was fabricated using a 0.35 um 20 V BCD process technology. The size of the fabricated prototype chip is 2,350 um ${\times}$ 2,350 um. We examined performances of the fabricated chip and compared its measured results with SPICE simulation data.

• Transactions of the Korean Society of Automotive Engineers
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• v.16 no.3
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• pp.15-22
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• 2008

Applications of bonded dissimilar materials such as integrated circuit(IC) packages, ceramics/metal and resin/metal bonded joints, are very increasing in various industry fields. It is very important to analyze the thermal stress and stress singularity at interface edge in bonded joints of dissimilar materials. In order to investigate the IC package crack propagating from the edge of die pad and resin, the fracture parameters of bonded dissimilar materials and material properties are obtained. In this paper, the thermal stress and its singularity index for the IC package were analyzed using 2-dimensional elastic boundary element method(BEM). From these results, crack propagation direction and path by thermal stress in the IC package were numerically simulated with boundary element method.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.7
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• pp.131-137
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• 2016

In this paper, we analyze the impedance analysis of vertical interconnection through-silicon vias (TSV) that is being studied for the purpose of improving the degree of integration and an electric feature in 3D IC. Also, it is to improve the performance and the degree of integration of the three-dimensional integrated circuit system which can exceed the limits of conventional two-dimensional a IC. In the future, TSV technology in full-chip 3-dimensional integrated circuit system design is very important, and a study on the electrical characteristics of the TSV for high-density and high-bandwidth system design is very important. Therefore, we study analyze the impedance influence of the TSV in accordance with the distance and frequency in a multiple TSV-to-TSV for the purpose of designing a full-chip three-dimensional IC. The results of this study also are applicable to semiconductor process tools and designed for the manufacture of a full-chip 3D IC.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.14 no.4
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• pp.275-283
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• 2021

In this study, a driver IC for an AC-powered LED that can be manufactured with a low voltage semiconductor process is designed and the performances of the driver IC were simulated. In order to manufacture a driver IC that operates directly at AC 220V, a semiconductor manufacturing process that satisfies a breakdown voltage of 500V or higher is required. A semiconductor manufacturing process for a high-voltage device requires a much higher manufacturing cost than a general semiconductor process for a low-voltage device. Therefore, the LED driver IC is designed in series so that it can be manufactured with semiconductor process technology that implements a low-voltage device. This makes it possible to divide and apply the voltage to each LED block even if the input voltage is high. The LED lighting circuit shows a power factor of 96% at 220V. In the pnp transistor circuit, a very high power factor of 99.7% can be obtained, and it shows a very stable operation regardless of the fluctuation of the input voltage.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.4 s.334
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• pp.53-60
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• 2005

This work Proposes and describes an LCD backlight driver IC using a voltage feedback circuit which improves the brightness uniformity. The proposed circuit controls the brightness of a backlight by amplifying of sampling voltage at a lamp. To keep the uniformity of brightness, the circuit has a reference lamp. The output voltage of the reference lamp is supplied commonly to each lamp that reduces a resistance deviation of the lamps. As a result, the proposed circuit shows brightness uniformity improvement of about $40\%$ compared to the conventional ones.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.14-14
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• 2010

A high voltage current sensing circuit for LED driver IC is designed and verfied by Cadence SPECTRE simulations. The current mirror pair, power and sensing MOSFETs with size ratio of K, is used in our on-chip current sensing circuit. Very low drain voltages of the current mirror pair should be matched to give accurate current sensing, so a folded-cascode opamp with a PMOS input pair is used in our design. A high voltage high side LDMOST switch is used between the current sensing circuit and power MOSFET to protect the current sensing circuit from the high output voltage. Simulation results using 0.35um BCD process show that current sensing is accurate with properly frequency compensated opamp.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.12 no.12
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• pp.5832-5837
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• 2011

In this paper, we designed a thermal shutdown block for LED applications using a 1 ${\mu}m$ CMOS process. The proposed thermal shutdown protection circuit has been designed with a shut-off temperature of $120^{\circ}C$ and a restart temperature of $90^{\circ}C$ which are suitable conditions for LED driver IC. Also, we got SPICE simulation results of the circuit about process variation of the semiconductor fabrication. From simulation data, process variation rate of the proposed circuit are within 7 % which are good results compared with conventional BJT current mirror type circuit. Finally, we confirmed that the thermal shutdown circuit has good thermal protection function within a LED driver IC.