• Journal of the Microelectronics and Packaging Society
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• v.21 no.1
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• pp.31-39
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• 2014

For mobile application, semiconductor packages are increasingly moving toward high density, miniaturization, lighter and multi-functions. Typical wafer level packages (WLP) is fan-in design, it can not meet high I/O requirement. The fan-out wafer level packages (FOWLPs) with reconfiguration technology have recently emerged as a new WLP technology. In FOWLP, warpage is one of the most critical issues since the thickness of FOWLP is thinner than traditional IC package and warpage of WLP is much larger than the die level package. Warpage affects the throughput and yield of the next manufacturing process as well as wafer handling and fabrication processability. In this study, we investigated the characteristics of warpage and main parameters which affect the warpage deformation of FOWLP using the finite element numerical simulation. In order to minimize the warpage, the characteristics of warpage for various epoxy mold compounds (EMCs) and carrier materials are investigated, and DOE optimization is also performed. In particular, warpage after EMC molding and after carrier detachment process were analyzed respectively. The simulation results indicate that the most influential factor on warpage is CTE of EMC after molding process. EMC material of low CTE and high Tg (glass transition temperature) will reduce the warpage. For carrier material, Alloy42 shows the lowest warpage. Therefore, considering the cost, oxidation and thermal conductivity, Alloy42 or SUS304 is recommend for a carrier material.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.4
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• pp.91-100
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• 2004

In this paper, we propose the method that analyzes the depth of object using 2 images in the disparity algorithm. It also presents the design and implementation of the proposed method for a real time processing. The proposed system uses the vertical strip structure for calculating similar pixel numbers for the processing and converts the depth of object into gray scale images in order to be displayed on various display devices. The hardware using the proposed method is operating with 30 frames/sec and verified by using the Altera APEX 20K1000EBC652-3. The proposed method is also Implemented into It by using the Hynix 0.35${\mu}{\textrm}{m}$ CB35 ASIC library and 256PQFP package.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2003.11a
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• pp.17-20
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• 2003

The EMC's rheological effects on molding process are evaluated in this study. When considering mold processing for IC packages, the major concerning items in current studies are incomplete fill, severe wire sweeping and paddle shifts etc. To simulate EMC's fast curing rheokinetics with 3D mold flow behavior, one should select appropriate rheometry which characterize each EMC's rheological motion and finding empirical parameters for numerical analysis current studies present the new rheometry with parallel plate rheometry for reactive rheokinetic experiments, the experiment and numerical analysis is done with the commercial higher filler loaded EMC for the case of Thin Quad Plant Packages (TQFP) with package thickness below 1.0 mm. The experimental results and simulation results based on new rheometry matches well in point of the prediction of wire sweep, filling behavior of melt front advancement and void trapping position.

• The Transactions of the Korea Information Processing Society
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• v.7 no.7
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• pp.2179-2187
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• 2000

This paper provides a heuristic analysis technique which determines an optimal number of V\ulcorner/V\ulcorner pads meeting allowable Simultaneous Switching Noise(SN) budget, early in the design phase. Until now, in determining the number of V\ulcorner/V\ulcorner pads, designers had to simulate packaging models case by case in the design phase or roughly allocate the power/ground pins in an inaccurate way according to typical design rules. However, due to the high density and frequency trends of IC technologies, the V\ulcorner/V\ulcorner pads allocation method can affect an adverse effect on IC operations, which requires more accurate and efficient methods be devised. Thus, this paper proposes an analytic V\ulcorner/V\ulcorner pads calculation method that gives a practical help for packaging designs early in the design phase. The proposed method is applied to a design example of a 1/8x208 pin plastic quad flat package (PQFP) and the results are verified through simulation using HSPICE.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.4
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• pp.471-477
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• 2014

In this paper, a modeling and co-simulation methodology is proposed to predict the radiated electromagnetic interference (EMI) from on-chip switching I/O buffers. The output waveforms of I/O buffers are simulated including the on-chip I/O buffer circuit and the RC extracted on-chip interconnect netlist, package, and printed circuit board (PCB). In order to accurately estimate the EMI, a full-wave 3D simulation is performed including the measurement environment. The simulation results are compared with near-field electromagnetic scan results and far-field measurements from an anechoic chamber, and the sources of emission peaks were analyzed. For accurate far-field EMI simulation, PCB power trace models considering IC switching current paths and external power cable models must be considered for accurate EMI prediction. With the proposed EMI simulation model and flow, the electromagnetic compatibility can be tested even before the IC is fabricated.

• Korean Journal of Materials Research
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• v.1 no.4
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• pp.206-213
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• 1991

The crystallized solder glasses with the low melting temperature for electronic package were prepared with the compositions of 77-80wt% PbO, 4.5-6wt% ZnO, 7.5-8.5wt% $B_2O_3$, 1-2wt% CaO, and 0.5-2.0wt% $P_2O_5$ containing 3-7wt% $TiO_2$. The Characterization of the solder glasses were studied using DTA, SEM and XRD. Frit containing 3wt% $TiO_2$ had crytallzation temperature range of $420-440^{\circ}C$. The major crystalline phase was identified as $2PbO{\cdot}ZnO{\cdot}B_2O_3$ by X-ray diffraction. Frits containing 4 wt% $TiO_2$ consisted of crysalline Phases of $PbTiO_3$ and $2PbO{\cdot}ZnO{\cdot}B_2O_3$ in the temperature range of $420-440^{\circ}C$, When g1ass frit containing 5wt% $TiO_2$ were heat-treated in the temperature range of $440-460^{\circ}C$, major crytalline phase was perovskite lead titanate.

• 전자공학회논문지 IE
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• v.47 no.2
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• pp.13-20
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• 2010

This paper describes a current mode PWM DC-DC converter IC for battery charger and supply power converter for portable electronic devices. The maximum supply voltage of IC is 40[V] and 2.8[V]~330[V] DC input power is converted to higher or programmed DC voltage according to external resistor ratio or wire winding ratio of transformer. The maximum supply output current is 3[A] over and voltage error of output node is within 3[%]. The whole circuit needed current mode PWM DC-DC converter circuit is designed. The package dimensions and number of external parts are minimized in order to get a smaller hardware size. The power consumption is smaller then 1[mW] at stand by period with supply voltage of 3.6[V] and maximum energy conversion efficiency is about 86[%]. This device has been designed in a 0.6[um] double poly, double metal 40[V] CMOS process and whole chip size is 2100*2000 [um2].

• Journal of the Korea Academia-Industrial cooperation Society
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• v.21 no.1
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• pp.8-13
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• 2020

Stress is the main cause of warpage failure of very thin substrates with thickness of several hundred ㎛, such as IC packages. Stress usually results from differences in crystal structures and corresponding thermal expansion coefficients when depositing different substances on a substrate. In this study, the behaviors of stress occurring in substrates were numerically analyzed by the thin-film pattern of the rectangles stacked on the substrates. First, the substrate displacement was obtained and the substrate strain and stress were obtained using it. When the tensile force is concentrated at the edge of the thin film pattern, normal and shear stresses are generated around the edge of the thin film pattern. Normal stress occurs near the edges of the thin film pattern and the vertexes. Shear stress also occurs around the edge of the thin film pattern, but unlike normal stress, it does not appear near the vertexes. It was also confirmed that the magnitude and direction of shear stress are changed around the edge. When edge forces of thin-film pattern are equal, the normal stress was about 10 times larger than the shear stress. This indicates that normal stress is the biggest cause of warpage failure.

• Journal of Advanced Navigation Technology
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• v.28 no.1
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• pp.129-135
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• 2024

In this paper, an analytical approach for the design and analysis of an aperiodic electromagnetic bandgap (EBG)-based power distribution network (PDN) in high-speed integrated-circuit (IC) packages and printed circuit boards (PCBs) is proposed. Aperiodic EBG is an effective method to solve the noise problem of high-speed IC packages and PCBs. However, its analysis becomes challenging due to increased computation time. To overcome the problem, the proposed analytical method entails deriving impedance parameters for EBG island and the overall PDN, which includes locally placed EBG structures. To validate the proposed method, a test vehicle is fabricated, demonstrating good agreement with the measurements. Significantly, the proposed analytical method reduces computation time by 99.7 %compared to the full-wave simulation method.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.11
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• pp.1-5
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• 2010

We developed a novel micro-electro mechanical systems (MEMS) test socket using silicon on insulator (SOI) substrate with the cantilever array structure. We designed the round shaped cantilevers with the maximum length of $350{\mu}m$, the maximum width of $200{\mu}m$ and the thickness of $10{\mu}m$ for $650{\mu}m$ pitch for 8 mm x 8 mm area and 121 balls square ball grid array (BGA) packages. The MEMS test socket was fabricated by MEMS technology using metal lift off process and deep reactive ion etching (DRIE) silicon etcher and so on. The MEMS test socket has a simple structure, low production cost, fine pitch, high pin count and rapid prototyping. We verified the performances of the MEMS test sockets such as deflection as a function of the applied force, path resistance between the cantilever and the metal pad and the contact resistance. Fabricated cantilever has 1.3 gf (gram force) at $90{\mu}m$ deflection. Total path resistance was less than $17{\Omega}$. The contact resistance was approximately from 0.7 to $0.75{\Omega}$ for all cantilevers. Therefore the test socket is suitable for BGA integrated circuit (IC) packages tests.