• Transactions on Electrical and Electronic Materials
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• v.3 no.2
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• pp.10-15
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• 2002

In this paper, the electrical characteristics of fabricated p+-n junction diode are demonstrated and interpreted with different theoretical calculations. Dopants distribution by boron ion implantation on silicon wafer were simulated with TRIM-code and ICECaEM simulator. In order to make electrical activation of implanted carriers, thermal annealing treatments are carried out by RTP method for 1min. at $1000^{circ}C$ under inert $N_2$ gas condition. In this case, profiles of dopants distribution before and after heat treatments in the substrate are observed from computer simulations. In the I-V characteristics of fabricated diodes, an analytical description method of a new triangular junction model is demonstrated and the results with calculated triangular junction are compared with measured data and theoretical calculated results of abrupt junction. Forward voltage drop with new triangular junction model is lower than the case of abrupt junction model. In the C-V characteristics of diode, the calculated data are compared with the measured data. Another I-V characteristics of diodes are measured after proton implantation in electrical isolation method instead of conventional etching method. From the measured data, the turn-on characteristics after proton implantation is more improved than before proton implantation. Also the C-V characteristics of diode are compared with the measured data before proton implantation. From the results of measured data, reasonable deviations are showed. But the C-V characteristics of diode after proton implantation are deviated greatly from the calculated data because of leakage currents in defect regions and layer shift of depletion by proton implantation.

• Journal of the Korean Geotechnical Society
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• v.25 no.9
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• pp.45-55
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• 2009

The quality of railroad trackbed fills has been controlled by field measurements of density and bearing resistance of plate-load tests. The control measures are compatible with the design procedures whose design parameter is $k_{30}$ for both ordinary-speed railways and high-speed railways. However, one of fatal flaws of the design procedures is that there are no simple laboratory measurement procedures for the design parameters ($k_{30}$ or, $E_{v2}$ and $E_{v2}/E_{v1}$) in design stage. To overcome the defect, the compressional wave velocity was adopted as a control measure, in parallel with the advent of the new design procedure, and its measurement technique was proposed in the preliminary investigation. The key concept of the quality control procedure is that the target value for field compaction control is the compressional wave velocity determined at optimum moisture content using modified compaction test, and direct-arrival method is used for the field measurements during construction, which is simple and reliable enough for practice engineers to access. This direct-arrival method is well-suited for such a shallow and homogeneous fill lift in terms of applicability and cost effectiveness. The sensitivity of direct-arrival test results according to the compaction quality was demonstrated at a test site, and it was concluded that compressional wave velocity can be effectively used as quality control measure. The experimental background far the companion study (Park et al., 2009) was established through field and laboratory measurements of the compressional wave velocity.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.86.1-86.1
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• 2015

As the feature size of Si-based semiconductor shrinks to nanometer scale, we are facing to the problems such as short channel effect and leakage current. One of the solutions to cope with those issues is to bring III-V compound semiconductors to the semiconductor structures, because III-V compound semiconductors have much higher carrier mobility than Si. However, introduction of III-V semiconductors to the current Si-based manufacturing process requires great challenge in the development of process integration, since they exhibit totally different physical and chemical properties from Si. For example, epitaxial growth, surface preparation and wet etching of III-V semiconductors have to be optimized for production. In addition, oxidation mechanisms of III-V semiconductors should be elucidated and re-growth of native oxide should be controlled. In this study, surface preparation methods of various III-V compound semiconductors such as GaAs, InAs, and GaSb are introduced in terms of i) how their surfaces are modified after different chemical treatments, ii) how they will be re-oxidized after chemical treatments, and iii) is there any effect of surface orientation on the surface preparation and re-growth of oxide. Surface termination and behaviors on those semiconductors were observed by MIR-FTIR, XPS, ellipsometer, and contact angle measurements. In addition, photoresist stripping process on III-V semiconductor is also studied, because there is a chance that a conventional photoresist stripping process can attack III-V semiconductor surfaces. Based on the Hansen theory various organic solvents such as 1-methyl-2-pyrrolydone, dimethyl sulfoxide, benzyl alcohol, and propylene carbonate, were selected to remove photoresists with and without ion implantation. Although SPM and DIO3 caused etching and/or surface roughening of III-V semiconductor surface, organic solvents could remove I-line photoresist without attack of III-V semiconductor surface. The behavior of photoresist removal depends on the solvent temperature and ion implantation dose.

• Journal of the Korean Vacuum Society
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• v.7 no.3
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• pp.201-207
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• 1998

We have investigated about interface characteristics between ZnO thin films and metal electrodes when ZnO and metal electrodes were fabricated as piezoelectric vibrators. At this, ZnO thin films were deposited by rf reactive magnetron sputtering method. After fabricating piezoelectric vibrator of Cr/ZnO/Cr structure with optimum condition, we analyse interface characteristics between ZnO thin films and metal electrodes by I-V measurement. AES depth profile, SEM and C-V measurement. From these measurements we found that ZnO piezoelectric vibrators showed good property when they fabricated as Cr/$SiO_2$/ZnO/Cr structure. And we could confirm these things by driving, and measuring vibration displacement of piezoelectric vibrator with $SiO_2$diffusion barrier.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.2
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• pp.93-98
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• 2020

We investigated the effect of a post-annealing process using ultraviolet (UV) light on the electrical properties of solution-processed InZnO (IZO) thin-film transistors (TFTs). UV light was irradiated on IZO TFTs for different time periods of 0s, 30s, and 90s. We measured transfer and retention stability curves to evaluate the performance of the fabricated TFTs. In addition, we measured height, amplitude, and phase AFM images to analyze changes in the surface and morphology of the devices. AFM measurements were performed by setting the drive amplitude of the cantilever tip to 47.9 mV in tapping mode, then dividing the device surface into 500 nm × 500 nm. In the case of IZO TFT irradiated with UV for 30s, the electron mobility and I_on/I_off ratio were improved, the threshold voltage was reduced by approximately 2 V, and the subthreshold swing also decreased form 1.34 V/dec to 1.11 V/dec.

• Nuclear Engineering and Technology
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• v.4 no.2
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• pp.116-131
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• 1972

A fast neutron time-of-flight spectrometer has been constructed with suitable choice of target thickness and proton bombarding energy in Li$^{7}$ (p, n) Be$^{7}$ nuclear reaction for a continuous keV spectrum of neutrons at 0 degree in 1-nsec pulse from a Van do Graaff and a time-pick-up fast neutron detector assembled with a 5 mm-thick 92% enriched B$^{10}$ slab and four heavily shielded 4＂$\times$3＂ NaI scintillation detectors. Energy resolution of this spectrometer is better than 0.3% at 50 keV and the signal-to-background ratio is also improved. Total cross section measurements of several separated single isotopes have been carried out with this spectrometer and analyzed by Rmaxtrix multi-level computer code. The spin values and resonance parameters of each individual resonances are given.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.9
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• pp.870-875
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• 2005

We measured the optogalvanic signal and discharge voltage-current(V-I) curve under the two different discharge conditions with different buffer gases, Ar, and Ne. When the Gd was used as a cathode material at low discharge current less than 10mA, a significant change was observed in the current-voltage curve. Time resolved optogalvanic signal measurement were measured by the diode laser of which wavelengths correspond to metastable transition line of these gases (Ar, Ne). From these measurements, we found that the characteristics of the V-I curve strongly depend on the Penning ionization process.

• Publications of The Korean Astronomical Society
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• v.15 no.spc1
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• pp.73-83
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• 2000

X-ray astronomy deals with measurements of the electromagnetic radiation in the energy range of $E\~0.1-100 keV (\lambda\~0.12-120{\AA})$. The wavelength of X-ray is comparable to the size of atoms, so that the photons in the X-ray range are usually produced and absorbed by the atomic processes. Since the launch of the first X-ray astronomy satellite 'Uhuru' in 1970, technological advances in a launch capability and a detection capability make X-ray astronomy one of the most rapidly evolving fields of astronomical research. Particularly, a spectral resolving power $E/{\Delta}E$ has been increased by an order of 2 - 3 (in the energy range of 0.1 - 10 keV) during the past 30years. In this paper, I briefly review a developing process of the resolving power and spectroscopic techniques. Then I describe important emission/absorption lines in X-ray astronomy, as well as diagnostics of gas property with line parameters.

• Proceedings of the KIEE Conference
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• 1989.11a
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• pp.105-108
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• 1989

For the purpose of fabricating of LB Ultra Thin Films. (N-docosyl pyridinium)-TCNQ(l: 1) Complex is synthesized. This specimen is verified by U.V. I.R and elemental analyzer. In fabricated LB films with this, as a measurements of electrical conduction characteristics in perpendicular direction, this films have characteristics of insulator(about $10^{-14}S/cm$). And negative resistance phenomena are observed in I-V characteristics of this films.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.314.1-314.1
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• 2014

The properties of Ni/Au Ohmic contacts formed on nonpolar a-plane GaN grown on r-plane sapphire substrate with different tilt angles are investigated using current-voltage (I-V) measurements. To investigate the effects of pattern direction and size on Ohmic contact properties of a-plane GaN, transmission line method (TLM) patterns are formed either along c-axis and m-axis on nonpolar GaN surface with different size. I-V measurement results show that the size of TLM pattern and formation direction of electrode have an effect on the electrical properties of a-plane GaN. The large sized patterns show the relatively lower sheet resistance compared to the small sized patterns. In addition, the sheet resistance of a-plane GaN along m-axis shows lower values than that along the c-axis. Finally, the effects of miscut angle of r-sapphire substrate ($0.2^{\circ}$, 0.4oand $0.6^{\circ}$) on electrical properties of a-plane GaN will be discussed.