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http://dx.doi.org/10.4313/JKEM.2020.33.2.93

Evaluation of Electrical Properties of IZO Thin-Film with UV Post-Annealing Treatment Time  

Lee, Jae-Yun (College of Electrical and Computer Engineering, Chungbuk National University)
Kim, Han-Sang (College of Electrical and Computer Engineering, Chungbuk National University)
Kim, Sung-Jin (College of Electrical and Computer Engineering, Chungbuk National University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.33, no.2, 2020 , pp. 93-98 More about this Journal
Abstract
We investigated the effect of a post-annealing process using ultraviolet (UV) light on the electrical properties of solution-processed InZnO (IZO) thin-film transistors (TFTs). UV light was irradiated on IZO TFTs for different time periods of 0s, 30s, and 90s. We measured transfer and retention stability curves to evaluate the performance of the fabricated TFTs. In addition, we measured height, amplitude, and phase AFM images to analyze changes in the surface and morphology of the devices. AFM measurements were performed by setting the drive amplitude of the cantilever tip to 47.9 mV in tapping mode, then dividing the device surface into 500 nm × 500 nm. In the case of IZO TFT irradiated with UV for 30s, the electron mobility and Ion/Ioff ratio were improved, the threshold voltage was reduced by approximately 2 V, and the subthreshold swing also decreased form 1.34 V/dec to 1.11 V/dec.
Keywords
IZO thin-film transistors; Ultraviolet; Post-annealing; Solution process; Sol-gel; Electrical characteristics;
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1 A. N. Hanna, A. M. Hussain, H. Omran, S. Alsharif, K. N. Salama, and M. M. Hussain, IEEE Electron Device Lett., 37, 193 (2016). [DOI: https://doi.org/10.1109/LED.2015.2505613]   DOI
2 M. Mizukami, S. I. Cho, K. Watanabe, M. Abiko, Y. Suzuri, S. Tokito, and J. Kido, IEEE Electron Device Lett., 39, 39 (2018). [DOI: https://doi.org/10.1109/LED.2017.2776296]   DOI
3 K. Nomura, T. Kamiya, H. Ohta, K. Ueda, M. Hirano, and H. Hosono, Appl. Phys. Lett., 85, 1993 (2004). [DOI: https://doi.org/10.1063/1.1788897]   DOI
4 E. Chong, K. C. Jo, and S. Y. Lee, Appl. Phys. Lett., 96, 152102 (2010). [DOI: https://doi.org/10.1063/1.3387819]   DOI
5 M. Mizukami, S. Oku, S. I. Cho, M. Tatetus, M. Abiko, M. Mamada, T. Sakanoue, Y. Suzuri, J. Kido, and S. Tokito, IEEE Electron Device Lett., 36, 841 (2015). [DOI: https://doi.org/10.1109/LED.2015.2443184]   DOI
6 M. R. Niazi, R. Li, E. Q. Li, A. R. Kirmani, M. Abdelsamie, Q. Wang, W. Pan, M. M. Payne, J. E. Anthony, D. M. Smilgies, S. T. Thoroddsen, E. P. Giannelis, and A. Amassian, Nat. Commun., 6, 8598 (2015). [DOI: https://doi.org/10.1038/ncomms9598]   DOI
7 E. Chong, Y. S. Chun, and S. Y. Lee, Electrochem. Solid- State Lett., 14, H96 (2011). [DOI: https://doi.org/10.1149/1.3518518]   DOI
8 E. Fortunato, A. Pimentel, A. Goncalves, A. Marques, and R. Martins, Thin Solid Films, 502, 104 (2006). [DOI: https://doi.org/10.1016/j.tsf.2005.07.311]   DOI
9 B. D. Ahn, J. H. Kim, H. S. Kang, C. H. Lee, S. H. Oh, K. W. Kim, G. E. Jang, and S. Y. Lee, Thin Solid Films, 516, 1382 (2008). [DOI: https://doi.org/10.1016/j.tsf.2007.03.072]   DOI
10 B. Zhang, H. Li, X. Zhang, Y. Luo, Q. Wang, and A. Song, Appl. Phys. Lett., 106, 093506 (2015). [DOI: https://doi.org/10.1063/1.4914296]   DOI
11 C. G. Choi, S. J. Seo, and B. S. Bae, Electrochem. Solid-State Lett., 11, H7 (2008). [DOI: https://doi.org/10.1149/1.2800562]   DOI
12 S. J. Seo, Y. H. Hwang, and B. S. Bae, Electrochem. Solid-State Lett., 13, H357 (2010). [DOI: https://doi.org/10.1149/1.3474606]   DOI
13 W. B. Jackson, R. L. Hoffman, and G. S. Herman, Appl. Phys. Lett., 87, 193503 (2005). [DOI: https://doi.org/10.1063/1.2120895]   DOI
14 C. Y. Koo, K. Song, T. Jun, D. Kim, Y. Jeong, S. H. Kim, J. Ha, and J. Moon, J. Electrochem. Soc., 157, J111 (2010). [DOI: https://doi.org/10.1149/1.3298886]   DOI
15 Y. J. Tak, D. H. Yoon, S. Yoon, U. H. Choi, M. M. Sabri, B. D. Ahn, and H. J. Kim, ACS Appl. Mater. Interfaces, 6, 6399 (2014). [DOI: https://doi.org/10.1021/am405818x]   DOI
16 K. K. Banger, Y. Yamashita, K. Mori, R. L. Peterson, T. Leedham, J. Rickard, and H. Sirringhaus, Nat. Mater., 10, 45 (2011). [DOI: https://doi.org/10.1038/nmat2914]   DOI
17 K. H. Ji, J. I. Kim, H. Y. Jung, S. Y. Park, R. Choi, U. K. Kim, C. S. Hwang, D. Lee, H. Hwang, and J. K. Jeong, Appl. Phys. Lett., 98, 103509 (2011). [DOI: https://doi.org/10.1063/1.3564882]   DOI
18 J. S. Park, J. K. Jeong, Y. G. Mo, H. D. Kim, and S. I. Kim, Appl. Phys. Lett., 90, 262106 (2007). [DOI: https://doi.org/10.1063/1.2753107]   DOI
19 Z. Yuan, X. Zhu, X. Wang, X. Cai, B. Zhang, D. Qiu, and H. Wu, Thin Solid Films, 519, 3254 (2011). [DOI: https://doi.org/10.1016/j.tsf.2010.12.022]   DOI
20 G. Goncalves, E. Elangovan, P. Barquinha, L. Pereira, R. Martins, and E. Fortunato, Thin Solid Films, 515, 8562 (2007). [DOI: https://doi.org/10.1016/j.tsf.2007.03.126]   DOI
21 S. F. Tseng, W. T. Hsiao, D. Chiang, K. C. Huang, and C. P. Chou, Appl. Surf. Sci., 257, 7204 (2011). [DOI: https://doi.org/10.1016/j.apsusc.2011.03.091]   DOI
22 C. Huang, M. Wang, Z. Deng, Y. Cao, Q. Liu, Z. Huang, Y. Liu, W. Guo, and Q. Huang, J. Mater. Sci.: Mater. Electron., 21, 1221 (2010). [DOI: https://doi.org/10.1007/s10854-009-0050-x]   DOI
23 A. Chen, Q. Su, H. Han, E. Enriquez, and Q. Jia, Adv. Mater., 31, 1803241 (2018). [DOI: https://doi.org/10.1002/adma.201803241]   DOI
24 B. Stegemann, K. M. Gad, P. Balamou, D. Sixtensson, D. Vossing, M. Kasemann, and H. Angermann, Appl. Surf. Sci., 395, 78 (2017). [DOI: https://doi.org/10.1016/j.apsusc.2016.06.090]   DOI
25 J. S. Park, J. H. Yang, T. Barnes, and S. H. Wei, Appl. Phys. Lett., 109, 042105 (2016). [DOI: https://doi.org/10.1063/1.4959848]   DOI