• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2003년도 춘계학술대회 논문집
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• pp.264-267
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• 2003

Pitch measurements of 150 nm pitch one-dimensional grating standards were carried out using an contact mode atomic force microscopy(C-AFM) with a high resolution three-axis laser interferometer. It was called as 'Nano-metrological AFM' In Nano-metrological AFM, Three laser interferometers were aligned well to the end of AFM tip. Laser sources of the three-axis laser interferometer in the nano-metrological AFM were calibrated with an I$_2$-stablilzed He-Ne laser at a wavelength of 633 nm. So, the Abbe error was minimized and the result of the pitch measurement using the nano-metrological AFM has a traceability to the length standard directly. The uncertainty in the pitch measurement was estimated in accordance with the Guide to the Expression of Uncertainty in Measurement(GUM). The Primary source of uncertainty in the pitch-measurements was derived from repeatability of pitch-measurement, and its value was approx 0.186 nm. Expanded uncertainty(k=2) of less than 5.23 nm was obtained. It is suggested that the metrological AFM is a useful tool for the nano-metrological standard calibration.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.98.2-98.2
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• 2013

Electrochemical phenomena underpin a broad spectrum of energy, chemical, and information technologies such as resistive memories and secondary batteries. The optimization of functionalities in these devices requires understanding electrochemical mechanisms on the nanoscale. Even though the nanoscale electrochemical phenomena have been studied by electron microscopies, these methods are limited for analyzing dynamic electrochemical behavior and there is still lack of information on the nanoscale electrochemical mechanisms. The alternative way can be an atomic force microscopy (AFM) because AFM allows nanoscale measurements and, furthermore, electrochemical reaction can be controlled by an application of electric field through AFM tip. Here, I will summarize recent studies to probe nanoscale electrochemical reaction in battery applications by AFM. In particular, we have recently developed electromechanical based AFM techniques for exploring reversible and irreversible electrochemical phenomena on the nanoscale. The present work suggests new strategies to explore fundamental electrochemical mechanisms using the AFM approach and eventually will provide a powerful paradigm for probing spatially resolved electrochemical information for energy applications.

• Transactions on Electrical and Electronic Materials
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• 제14권3호
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• pp.160-163
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• 2013

We investigated the effect of light intensity and wavelength of a solar cell device by using photoconductive atomic force microscopy (PC-AFM). The $POCl_3$ diffusion doping process was used to produce a p-n junction solar cell device based on a Poly-Si wafer and the electrical properties of prepared solar cells were measured using a solar cell simulator system. The measured open circuit voltage ($V_{oc}$) is 0.59 V and the short circuit current ($I_{sc}$) is 48.5 mA. Also, the values of the fill factors and efficiencies of the devices are 0.7% and approximately 13.6%, respectively. In addition, PC-AFM, a recent notable method for nano-scale characterization of photovoltaic elements, was used for direct measurements of photoelectric characteristics in local instead of large areas. The effects of changes in the intensity and wavelength of light shining on the element on the photoelectric characteristics were observed. Results obtained through PC-AFM were compared with the electric/optical characteristics data obtained through a solar simulator. The voltage ($V_{PC-AFM}$) at which the current was 0 A in the I-V characteristic curves increased sharply up to 1.8 $mW/cm^2$, peaking and slowly falling as light intensity increased. Here, $V_{PC-AFM}$ at 1.8 $mW/cm^2$ was 0.29 V, which corresponds to 59% of the average $V_{oc}$ value, as measured with the solar simulator. Also, while light wavelength was increased from 300 nm to 1,100 nm, the external quantum efficiency (EQE) and results from PC-AFM showed similar trends at the macro scale, but returned different results in several sections, indicating the need for detailed analysis and improvement in the future.

• International Journal of Precision Engineering and Manufacturing
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• 제5권3호
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• pp.19-25
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• 2004

Pitch measurements of 150 nm one-dimensional grating standards were carried out using a contact mode atomic force microscopy with a high resolution three-axis laser interferometer. This measurement technique was named as the 'nano-metrological AFM'. In the nano-metrological AFM, three laser interferometers were aligned precisely to the end of an AFM tip. Laser sources of the three-axis laser interferometer in the nano-metrological AFM were calibrated with an I$_2$ stabilized He-Ne laser at a wavelength of 633 nm. Therefore, the Abbe error was minimized and the result of the pitch measurement using the nano-metrological AFM could be used to directly measure the length standard. The uncertainty in the pitch measurement was estimated in accordance with the Guide to the Expression of Uncertainty in Measurement (GUM). The primary source of uncertainty in the pitch-measurements was derived from the repeatability of the pitch-measurements, and its value was about 0.186 nm. The average pitch value was 146.65 nm and the combined standard uncertainty was less than 0.262 nm. It is suggested that the metrological AFM is a useful tool for the nano-metrological standard calibration.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2012년도 춘계학술대회 논문집
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• pp.505-506
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• 2012

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2011년도 춘계학술대회 논문집
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• pp.629-630
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• 2011

• 한국재료학회지
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• 제28권11호
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• pp.680-684
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• 2018

We investigate the effect of light intensity and wavelength of a solar cell device using photoconductive atomic force microscopy(PC-AFM). A $POCl_3$ diffusion doping process is used to produce a p-n junction solar cell device based on a polySi wafer, and the electrical properties of prepared solar cells are measured using a solar cell simulator system. The measured open circuit voltage($V_{oc}$) is 0.59 V and the short circuit current($I_{sc}$) is 48.5 mA. Moreover, the values of the fill factors and efficiencies of the devices are 0.7 and approximately 13.6 %, respectively. In addition, PC-AFM, a recent notable method for nano-scale characterization of photovoltaic elements, is used for direct measurements of photoelectric characteristics in limited areas instead of large areas. The effects of changes in the intensity and wavelength of light shining on the element on the photoelectric characteristics are observed. Results obtained through PC-AFM are compared with the electric/optical characteristics data obtained through a solar simulator. The voltage($V_{PC-AFM}$) at which the current is 0 A in the I-V characteristic curves increases sharply up to $18W/m^2$, peaking and slowly falling as light intensity increases. Here, $V_{PC-AFM}$ at $18W/m^2$ is 0.29 V, which corresponds to 59 % of the average $V_{oc}$ value, as measured with the solar simulator. Furthermore, while the light wavelength increases from 300 nm to 1,100 nm, the external quantum efficiency(EQE) and results from PC-AFM show similar trends at the macro scale but reveal different results in several sections, indicating the need for detailed analysis and improvement in the future.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2003년도 추계학술대회
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• pp.1560-1565
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• 2003

Tapping mode atomic force microscopy (TM-AFM) utilizes the dynamic response of a resonating probe tip as it approaches and retracts from a sample to measure the topography and material properties of a nanostructure. We present recent results based on nonlinear dynamical systems theory, computational continuation techniques and detailed experiments that yield new perspectives and insight into AFM. A dynamic model including van der Waals and Derjaguin-Muller-Toporov (DMT) contact forces demonstrates that periodic solutions can be represented with respect to the approach distance and excitation frequency. Turning points on the surface lead to hysteretic amplitude jumps as the tip nears/retracts from the sample. Experiments are performed using a tapping mode tip on a graphite sample to verify the predictions.

• 대한전자공학회논문지SP
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• 제41권5호
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• pp.23-34
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• 2004

본 논문에서는 사전학습이 필요 없는 능동 특징점 모델(non-prior training active feature model; NPT AFM) 기반에서 광류(optical flow)를 이용한 객체추적 기술을 제안한다. 제안한 알고리듬은 비정형 객체에 대한 분석[1]에 초점을 두고 있으며, 실시간에서 NPT-AFM을 사용한 강건한 추적을 가능하게 한다. NPT-AFM 알고리듬은 관심 객체의 위치를 파악하는 과정 (localization)과 이전 프레임 정보와 현재 프레임 정보를 이용하여, 객체의 위치를 예측(prediction), 보정(correction)하는 과정으로 나눌 수 있다 위치 파악 과정에서는 움직임 분할(motion segmentation)을 수행한 후 개선된 Shi-Tomasi의 특징점 추적 알고리듬[2]을 사용 하였다. 예측 및 보정 과정에서는 광류 정보를 사용하여 특징점을 추적하고[3] 만약, 특징점이 적절히 추적 되지 않거나 추적에 실패하면 특징점들의 시간(temporal), 공간(spatial)적 정보를 이용하여 예측, 보정하게 된다. 객체의 형태 (shape)대신 특징점을 사용하였으며, 객체를 추적하는 과정에서 특징점들은 능동 특징점 모델(active feature model; AFM)을 위한 학습 집합(training sets)의 요소로 갱신된다. 실험결과, 제안한 NPT-AF% 기반 추적 알고리듬은 실시간에서 비정형 객체를 추적하는데 강건함을 보석준다.

• 한국진공학회지
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• 제12권2호
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• pp.123-129
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• 2003

다공질 실리콘(PS)기판 위에 rf-스퍼터링법으로 10~40 nm의 두께의 반 투과성 구리박막을 증착하였다. PS는 p형 (100) 실리콘 웨이퍼를 기판으로 50㎃/$\textrm{cm}^2$의 전류밀도를 사용하여 전해 에칭법으로 양극 산화하여 제작하였다. PS층과 Cu박막의 미세구조를 분석하기 위하여 SEM, AFM 그리고 XRD 분석을 시행하였다. AFM 분석결과 Cu 박막의 RMS roughness 값은 약 1.47nm로 Volmer-Weber 유형의 결정립 성장을 보였으며, 결정립의 성장은 (111) 배향성을 나타냈다. PS층의 PL 스펙트럼은 blue green 영역에서 관찰되었고, Cu 박막 증착 후 0.05eV의 blue shift가 나타났으며, 약간의 강도저하를 보였다. PS/Cu접합구조의 FTIR스펙트럼은 주 피크변화는 없으나 전반적인 강도의 감소를 보였다. I-V 특성곡선으로 본 PS/Cu 접합구조는 ideality factor가 2.77이고 barrier의 높이가 0.678eV인 Schottky 유형의 다이오드 특성을 보였다. PS/Cu 접합구조로 만든 다이오드 제조로 EL특성을 관찰할 수 있었다.