• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.264-267
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• 2003

Pitch measurements of 150 nm pitch one-dimensional grating standards were carried out using an contact mode atomic force microscopy(C-AFM) with a high resolution three-axis laser interferometer. It was called as 'Nano-metrological AFM' In Nano-metrological AFM, Three laser interferometers were aligned well to the end of AFM tip. Laser sources of the three-axis laser interferometer in the nano-metrological AFM were calibrated with an I$_2$-stablilzed He-Ne laser at a wavelength of 633 nm. So, the Abbe error was minimized and the result of the pitch measurement using the nano-metrological AFM has a traceability to the length standard directly. The uncertainty in the pitch measurement was estimated in accordance with the Guide to the Expression of Uncertainty in Measurement(GUM). The Primary source of uncertainty in the pitch-measurements was derived from repeatability of pitch-measurement, and its value was approx 0.186 nm. Expanded uncertainty(k=2) of less than 5.23 nm was obtained. It is suggested that the metrological AFM is a useful tool for the nano-metrological standard calibration.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.98.2-98.2
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• 2013

Electrochemical phenomena underpin a broad spectrum of energy, chemical, and information technologies such as resistive memories and secondary batteries. The optimization of functionalities in these devices requires understanding electrochemical mechanisms on the nanoscale. Even though the nanoscale electrochemical phenomena have been studied by electron microscopies, these methods are limited for analyzing dynamic electrochemical behavior and there is still lack of information on the nanoscale electrochemical mechanisms. The alternative way can be an atomic force microscopy (AFM) because AFM allows nanoscale measurements and, furthermore, electrochemical reaction can be controlled by an application of electric field through AFM tip. Here, I will summarize recent studies to probe nanoscale electrochemical reaction in battery applications by AFM. In particular, we have recently developed electromechanical based AFM techniques for exploring reversible and irreversible electrochemical phenomena on the nanoscale. The present work suggests new strategies to explore fundamental electrochemical mechanisms using the AFM approach and eventually will provide a powerful paradigm for probing spatially resolved electrochemical information for energy applications.

• Transactions on Electrical and Electronic Materials
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• v.14 no.3
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• pp.160-163
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• 2013

We investigated the effect of light intensity and wavelength of a solar cell device by using photoconductive atomic force microscopy (PC-AFM). The $POCl_3$ diffusion doping process was used to produce a p-n junction solar cell device based on a Poly-Si wafer and the electrical properties of prepared solar cells were measured using a solar cell simulator system. The measured open circuit voltage ($V_{oc}$) is 0.59 V and the short circuit current ($I_{sc}$) is 48.5 mA. Also, the values of the fill factors and efficiencies of the devices are 0.7% and approximately 13.6%, respectively. In addition, PC-AFM, a recent notable method for nano-scale characterization of photovoltaic elements, was used for direct measurements of photoelectric characteristics in local instead of large areas. The effects of changes in the intensity and wavelength of light shining on the element on the photoelectric characteristics were observed. Results obtained through PC-AFM were compared with the electric/optical characteristics data obtained through a solar simulator. The voltage ($V_{PC-AFM}$) at which the current was 0 A in the I-V characteristic curves increased sharply up to 1.8 $mW/cm^2$, peaking and slowly falling as light intensity increased. Here, $V_{PC-AFM}$ at 1.8 $mW/cm^2$ was 0.29 V, which corresponds to 59% of the average $V_{oc}$ value, as measured with the solar simulator. Also, while light wavelength was increased from 300 nm to 1,100 nm, the external quantum efficiency (EQE) and results from PC-AFM showed similar trends at the macro scale, but returned different results in several sections, indicating the need for detailed analysis and improvement in the future.

• International Journal of Precision Engineering and Manufacturing
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• v.5 no.3
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• pp.19-25
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• 2004

Pitch measurements of 150 nm one-dimensional grating standards were carried out using a contact mode atomic force microscopy with a high resolution three-axis laser interferometer. This measurement technique was named as the 'nano-metrological AFM'. In the nano-metrological AFM, three laser interferometers were aligned precisely to the end of an AFM tip. Laser sources of the three-axis laser interferometer in the nano-metrological AFM were calibrated with an I$_2$ stabilized He-Ne laser at a wavelength of 633 nm. Therefore, the Abbe error was minimized and the result of the pitch measurement using the nano-metrological AFM could be used to directly measure the length standard. The uncertainty in the pitch measurement was estimated in accordance with the Guide to the Expression of Uncertainty in Measurement (GUM). The primary source of uncertainty in the pitch-measurements was derived from the repeatability of the pitch-measurements, and its value was about 0.186 nm. The average pitch value was 146.65 nm and the combined standard uncertainty was less than 0.262 nm. It is suggested that the metrological AFM is a useful tool for the nano-metrological standard calibration.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2012.05a
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• pp.505-506
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• 2012

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2011.06a
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• pp.629-630
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• 2011

• Korean Journal of Materials Research
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• v.28 no.11
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• pp.680-684
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• 2018

We investigate the effect of light intensity and wavelength of a solar cell device using photoconductive atomic force microscopy(PC-AFM). A $POCl_3$ diffusion doping process is used to produce a p-n junction solar cell device based on a polySi wafer, and the electrical properties of prepared solar cells are measured using a solar cell simulator system. The measured open circuit voltage($V_{oc}$) is 0.59 V and the short circuit current($I_{sc}$) is 48.5 mA. Moreover, the values of the fill factors and efficiencies of the devices are 0.7 and approximately 13.6 %, respectively. In addition, PC-AFM, a recent notable method for nano-scale characterization of photovoltaic elements, is used for direct measurements of photoelectric characteristics in limited areas instead of large areas. The effects of changes in the intensity and wavelength of light shining on the element on the photoelectric characteristics are observed. Results obtained through PC-AFM are compared with the electric/optical characteristics data obtained through a solar simulator. The voltage($V_{PC-AFM}$) at which the current is 0 A in the I-V characteristic curves increases sharply up to $18W/m^2$, peaking and slowly falling as light intensity increases. Here, $V_{PC-AFM}$ at $18W/m^2$ is 0.29 V, which corresponds to 59 % of the average $V_{oc}$ value, as measured with the solar simulator. Furthermore, while the light wavelength increases from 300 nm to 1,100 nm, the external quantum efficiency(EQE) and results from PC-AFM show similar trends at the macro scale but reveal different results in several sections, indicating the need for detailed analysis and improvement in the future.

• Proceedings of the KSME Conference
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• 2003.11a
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• pp.1560-1565
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• 2003

Tapping mode atomic force microscopy (TM-AFM) utilizes the dynamic response of a resonating probe tip as it approaches and retracts from a sample to measure the topography and material properties of a nanostructure. We present recent results based on nonlinear dynamical systems theory, computational continuation techniques and detailed experiments that yield new perspectives and insight into AFM. A dynamic model including van der Waals and Derjaguin-Muller-Toporov (DMT) contact forces demonstrates that periodic solutions can be represented with respect to the approach distance and excitation frequency. Turning points on the surface lead to hysteretic amplitude jumps as the tip nears/retracts from the sample. Experiments are performed using a tapping mode tip on a graphite sample to verify the predictions.

• Journal of the Institute of Electronics Engineers of Korea SP
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• v.41 no.5
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• pp.23-34
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• 2004

In this paper we propose a feature point tracking algorithm using optical flow under non-prior taming active feature model (NPT-AFM). The proposed algorithm mainly focuses on analysis non-rigid objects[1], and provides real-time, robust tracking by NPT-AFM. NPT-AFM algorithm can be divided into two steps: (i) localization of an object-of-interest and (ii) prediction and correction of the object position by utilizing the inter-frame information. The localization step was realized by using a modified Shi-Tomasi's feature tracking algoriam[2] after motion-based segmentation. In the prediction-correction step, given feature points are continuously tracked by using optical flow method[3] and if a feature point cannot be properly tracked, temporal and spatial prediction schemes can be employed for that point until it becomes uncovered again. Feature points inside an object are estimated instead of its shape boundary, and are updated an element of the training set for AFH Experimental results, show that the proposed NPT-AFM-based algerian can robustly track non-rigid objects in real-time.

• Journal of the Korean Vacuum Society
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• v.12 no.2
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• pp.123-129
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• 2003

Thin transparent Cu films in the thickness range of 10 ~ 40 nm are deposited by rf-magnetron sputtering on porous silicon (PS) anodized on p-type silicon in dark. Microstructural features of the Cu films are investigated using SEM, AFM and XRD techniques. The RMS roughness of the Cu films is found to be around 1.47 nm and the grain growth is columnar with a (111) preferred orientation and follows the Volmer-Weber mode. The photoluminescence studies showed that a broad luminiscence peak of PS near the blue-green region gets blue shifted (~0.05 eV) with a small reduction in intensity and therefore, Cu-related PL quenching is absent. The FTIR absorption spectra on the PS/Cu structure revealed no major change of the native PS peaks but only a reduction in the relative intensity. The I-V characteristic curves further establish the Schottky nature of the diode with an ideality factor of 2.77 and a barrier height of 0.678 eV. An electroluminiscence (EL) signal of small intensity could be detected for the above diode.