• Title/Summary/Keyword: I/O ratio

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Resonant Tank Design Considerations and Implementation of a LLC Resonant Converter with a Wide Battery Voltage Range

  • Sun, Wenjin;Wu, Hongfei;Hu, Haibing;Xing, Yan
    • Journal of Power Electronics
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    • v.15 no.6
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    • pp.1446-1455
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    • 2015
  • This paper illustrates resonant tank design considerations and the implementation of a LLC resonant converter with a wide battery voltage range based on the fundamental harmonic approximation (FHA) analysis. Unlike the conventional design at zero load, the parameter K (the ratio of the transformer magnetizing inductor Lm to the resonant inductor Lr) of the LLC converter in this paper is designed with two charging points, (Vo_min, Io_max1) and (Vo_max, Io_max2), according to the battery charging strategy. A 2.9kW prototype with an output voltage range of 36V to 72V dc is built to verify the design. It achieves a peak efficiency of 96%.

Optical spectroscopy of LMC SNRs to reveal the origin of [P II] knots

  • Aliste C., Rommy L.S.E.;Koo, Bon-Chul;Seok, Ji Yeon;Lee, Yong-Hyun
    • The Bulletin of The Korean Astronomical Society
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    • v.46 no.2
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    • pp.65.2-66
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    • 2021
  • Observational studies of supernova (SN) feedback are limited. In our galaxy, most supernova remnants (SNRs) are located in the Galactic plane, so there is contamination from foreground/background sources. SNRs located in other galaxies are too far, so we cannot study them in detail. The Large Magellanic Cloud (LMC) is a unique place to study the SN feedback due to their proximity, which makes possible to study the structure of individual SNRs in some detail together with their environment. Recently, we carried out a systematic study of 13 LMC SNRs using [P II] (1.189 ㎛) and [Fe II] (1.257 ㎛) narrowband imaging with SIRIUS/IRSF, four SNRs (SN 1987A, N158A, N157B and N206), show [P II]/[Fe II] ratio much higher than the cosmic abundance. While the high ratio of SN 1987A could be due to enhanced abundance in SN ejecta, we do not have a clear explanation for the other cases. We investigate the [P II] knots found in SNRs N206, N157B and N158A, using optical spectra obtained last November with GMOS-S mounted on Gemini-South telescope. We detected several emission lines (e.g., H I, [O I], He I, [O III], [N II] and [S II]) that are present in all three SNRs, among other lines that are only found in some of them (e.g., [Ne III], [Fe III] and [Fe II]). Various line ratios are measured from the three SNRs, which indicate that the ratios of N157B tend to differ from those of other two SNRs. We will use the abundances of He and N (from the detection of [N II] and He I emission lines), together with velocity measurements to tell whether the origin of the [P II] knots are SN ejecta or CSM/ISM. For this purpose we have built a family of radiative shock with self-consistent pre-ionization using MAPPINGS 5.1.18, with shock velocities in the range of 100 to 475 km/s. We will compare the observed and modeled line fluxes for different depletion factors.

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Forming Characteristics of Laser Welded Tailored Blanks I : Tensile Deformation Characteristics. (레이저 용접 테일러드 블랭크의 기본 성형특성 I : 인장변형 특성)

  • Park, Gi-Cheol;Han, Su-Sik;Kim, Gwang-Seon;Gwon, O-Jun
    • Transactions of Materials Processing
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    • v.7 no.1
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    • pp.23-35
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    • 1998
  • In order to analyze the tensile deformation characteristics of laser welded tailored blanks. laser welded blanks of different thikness and strength combinations were prepared and tensile tests were done. The tensile elongation along the direction perpendicular to weld line of laser welded blanks was reduced as increasing the deformation restraining force (strength X thicknes) ratio between two welded sheets and fracture occurred at weaker side of base sheets if void ration of welded sheets and fracture occurred at weaker side of base sheets if void ratio of weld section was less than 45% The tensile elongation along weld line reached above 90% of the elongation of base material if welding was done perfectly. Total elongation along the direction perpendicular to weld line was able to be predicted by force equilibrium and power law behavior of base sheets and it was related with the deformation of stronger sheet and formability of weaker side.

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Early Hydration of Ticalcium Silicate(I) (Tricalcium Silicate의 초기수화반응(I))

  • 오희갑;최상흘
    • Journal of the Korean Ceramic Society
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    • v.23 no.5
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    • pp.35-40
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    • 1986
  • The early hydration of tri-calcium silicate $(C_3S)$ with different cooling conditions was studied by varing water/solid ratio and atmosphere. The cooling condition and water/solid ratio affected to the second peak of heat liberation but it had no correlation to the induction period. The $Ca^{2+}$ concentration in the aqueous solution was maximized at the starting point of the second peak of heat liberation but in the $CO_2$ exsistence the $Ca^{2+}$ concentration was low and $SiO_2$ con-centration was increased. The hydration rate of $C_3S$ was so accelerated that the induction period could not appear in the $CO_2$ exsistence.

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The Change of I-V Characteristics by Gate Voltage Stress on Few Atomic Layered MoS2 Field Effect Transistors (수 원자층 두께의 MoS2 채널을 가진 전계효과 트랜지스터의 게이트 전압 스트레스에 의한 I-V 특성 변화)

  • Lee, Hyung Gyoo;Lee, Gisung
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.31 no.3
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    • pp.135-140
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    • 2018
  • Atomically thin $MoS_2$ single crystals have a two-dimensional structure and exhibit semiconductor properties, and have therefore recently been utilized in electronic devices and circuits. In this study, we have fabricated a field effect transistor (FET), using a CVD-grown, 3 nm-thin, $MoS_2$ single-crystal as a transistor channel after transfer onto a $SiO_2/Si$ substrate. The $MoS_2$ FETs displayed n-channel characteristics with an electron mobility of $0.05cm^2/V-sec$, and a current on/off ratio of $I_{ON}/I_{OFF}{\simeq}5{\times}10^4$. Application of bottom-gate voltage stresses, however, increased the interface charges on $MoS_2/SiO_2$, incurred the threshold voltage change, and degraded the device performance in further measurements. Exposure of the channel to UV radiation further degraded the device properties.

Synthesis, Spectroscopic Studies and Biological Applications of Organotin(IV) Derivatives of 3-[N-(4-Nitrophenyl)-amido]propenoic Acid and 3-[N-(4-Nitrophenyl)-amido]propanoic Acid

  • Shahid, Khadija;Shahzadi, Saira;Ali, Saqib;Mazhar, M.
    • Bulletin of the Korean Chemical Society
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    • v.27 no.1
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    • pp.44-52
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    • 2006
  • New organotin(IV) derivatives with general formulae R_2SnL_2 and R_3SnL, where R = methyl, n-butyl, n-octyl and phenyl and HL is either 3-[N-(4-nitrophenyl)amido]-propenoic acid or 3-[N-(4-nitrophenyl)amido] propanoic acid have been synthesized in 1 : 2 and 1 : 1 molar ratio by different methods. The FTIR spectra clearly demonstrated that the organotin(IV) moieties react with [O,O] atoms of the ligands. The bonding and coordination behavior in these complexes are discussed on the basis of multinuclear (^1H,\,^{13}C,\,^{119}Sn) NMR and mass spectrometric studies. Antibacterial, and antifungal screening tests were performed for these compounds and reported here. These values were compared to those of the precursors and it was found that diorganotin(IV) complexes exhibit less activity as compared to triorganotin(IV) complexes . LD_{50} data were obtained by Brine Shrimp assay method. Insecticidal activity was performed for selective compounds by contact toxicity method.

Design of high speed-low voltage LVDS driver circuit with the novel ESD protection device (새로운 구조의 ESD 보호소자를 내장한 고속-저전압 LVDS Driver 설계)

  • Lee, Jae-Hyun;Kim, Kui-Dong;Kwon, Jong-Ki;Koo, Yong-Seo
    • Proceedings of the IEEK Conference
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    • 2005.11a
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    • pp.731-734
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    • 2005
  • In this study, the design of advanced LVDS(Low Voltage Differential Signaling) I/O interface circuit with new structural low triggering ESD (Electro-Static Discharge) protection circuit was investigated. Due to the differential transmission technique and low power consumption at the same time. Maximum transmission data ratio of designed LVDS transmitter was simulated to 5Gbps. And Zener Triggered SCR devices to protect the ESD phenomenon were designed. This structure reduces the trigger voltage by making the zener junction between the lateral PNP and base of lateral NPN in SCR structure. The triggering voltage was simulated to 5.8V. Finally, we performed the layout high speed I/O interface circuit with the low triggered ESD protection device in one-chip.

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The Design of LVDS Driver with ESD protection device of low voltage triggering characteristics (저 전압 트리거형 ESD 보호소자를 탑재한 LVDS Driver 설계)

  • Yuk, Seung-Bum;Kim, Kui-Dong;Kwon, Jong-Ki;Koo, Yong-Seo
    • Proceedings of the IEEK Conference
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    • 2005.11a
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    • pp.805-808
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    • 2005
  • In this study, the design of advanced LVDS(Low Voltage Differential Signaling) I/O interface circuit with new structural low triggering ESD(Electro-Static Discharge) protection circuit was investigated. Due to the differential transmission technique and low power consumption at same time. maximum transmission data ratio of designed LVDS transmitter was simulated to 5Gbps, Also, the LIGCSCR(Latch-up Immune Gate Coupled SCR)was designed. It consists of PLVTSCR (P-type Low Voltage Trigger SCR), control NMOS and RC network. The triggering voltage was simulated to 3.6V. And the latch-up characteristics were improved. Finally, we performed the layout high speed I/O interlace circuit with the low triggered ESD protection device in one-chip.

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A Study on The Design of High Speed-Low Voltage LVDS Driver Circuit with Novel ESD Protection Device (새로운 구조의 ESD 보호소자를 내장한 고속-저 전압 LVDS 드라이버 설계에 관한 연구)

  • Kim, Kui-Dong;Kwon, Jong-Ki;Lee, KJae-Hyun;Koo, Yong-Seo
    • Journal of IKEEE
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    • v.10 no.2 s.19
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    • pp.141-148
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    • 2006
  • In this study, the design of advanced LVDS(Low Voltage Differential Signaling) I/O interface circuit with new structural low triggering ESD (Electro-Static Discharge) protection circuit was investigated. Due to the differential transmission technique and low signal swing range, maximum transmission data ratio of designed LVDS transmitter was simulated to 5Gbps. And Zener Triggered SCR devices to protect the ESD Phenomenon were designed. This structure reduces the trigger voltage by making the zener junction between the lateral PNP and base of lateral NPN in SCR structure. The triggering voltage was simulated to 5.8V. Finally, The high speed I/O interface circuit with the low triggered ESD protection device in one-chip was designed.

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Optimal Stochastic Policies in a network coding capable Ad Hoc Networks

  • Oh, Hayoung
    • KSII Transactions on Internet and Information Systems (TIIS)
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    • v.8 no.12
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    • pp.4389-4410
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    • 2014
  • Network coding is a promising technology that increases system throughput by reducing the number of packet transmissions from the source node to the destination node in a saturated traffic scenario. Nevertheless, some packets can suffer from end-to-end delay, because of a queuing delay in an intermediate node waiting for other packets to be encoded with exclusive or (XOR). In this paper, we analyze the delay according to packet arrival rate and propose two network coding schemes, iXOR (Intelligent XOR) and oXOR (Optimal XOR) with Markov Decision Process (MDP). They reduce the average delay, even under an unsaturated traffic load, through the Holding-${\chi}$ strategy. In particular, we are interested in the unsaturated network scenario. The unsaturated network is more practical because, in a real wireless network, nodes do not always have packets waiting to be sent. Through analysis and extensive simulations, we show that iXOR and oXOR are better than the Distributed Coordination Function (DCF) without XOR (the general forwarding scheme) and XOR with DCF with respect to average delay as well as delivery ratio.