• 정보처리학회논문지C
• /
• 제11C권6호
• /
• pp.843-850
• /
• 2004

모바일 기기가 널리 보급되면서 모바일 기기를 이용한 다양한 서비스에 대한 요구가 증가되었다. 특히, 멀티미디어, 게임, 데이터베이스[1]와 같은 데이터 용량이 큰 응용 서비스에 대한 요구가 크게 증가하고 있다. 하지만, 모바일 기기는 그 특성상 저장 공간이 충분하지 못하기 때문에 유선 환경에서와 같은 다양한 서비스를 적용하는데 어려움이 있었다. 따라서 모바일 기기의 저장 공간의 한계를 극복하기 위한 노력의 하나로 iSCSI를 이용해 모바일 기기에 원격 스토리지 서비스를 제공하는 연구[5]가 진행되었다. 그러나 모바일 기기에 iSCSI를 적용했을 때, 지연 시간에 민감한 iSCSI의 구조적인 특성 때문에 iSCSI 클라이언트가 서버에서 멀리 떨어진 위치로 이동하게 되면 iSCSI I/O 성능이 급격히 떨어지는 문제가 발생한다. 쓰기 작업의 경우 네트워크 지연이 64ms가 되는 경우 $28\%$의 성능 저하가 발생했다. iSCSI 프로토콜은 동작 방식의 특성상 Initiator와 Target간의 데이터 이동 지연 시간이 커지게 되면 성능이 급격하게 떨어지는 단점을 가지고 있다. 본 논문에서는 모바일 기기가 스토리지 서버로부터 거리가 멀어졌을 때, 전송 지연시간이 증가함에 따라 iSCSI 성능이 급격하게 떨어지는 단점을 개선하기 위해 중간서버(Intermediate Target)를 이용해 iSCSI Target을 지역화하여 성능을 높이는 방안을 제안한다.

• 정보보호학회논문지
• /
• 제15권4호
• /
• pp.51-60
• /
• 2005

통신망과 저장장치의 발달에 따라 내부 사용자에 의한 중요 정보 자산의 외부 유출이 증가하고 있으므로 이에 대한 보안을 강화해야할 필요성이 증대되고 있다. 제안한 파일유출 모니터링시스템은 클라이언트에서 파일이 저장매체에 저장/복사되거나 파일이 종이문서로 인쇄되어 외부로 유출되는 경우에 로그를 발생시켜 서버에서 이를 모니터링한다. 모니터링 방법은 커널 레벨에서 I/O Manager에 의해 발생하는 IRP의 필터링과 Win32 API 후킹 기법을 사용하였다. 특히 파일을 저장매체에 저장하는 경우, 네트워크 공유를 통하여 파일을 저장하는 경우 및 파일의 인쇄를 통하여 유출하는 경우에 로그를 발생시키고 모니터링하는 방법을 구현하였다. 모니터링시스템은 윈도우즈 2000 및 XP 실험환경에서 파일의 복사와 인쇄 시 로그가 $100\%$ 발생되고 모니터링 기능이 수행됨을 확인하였다.

• 대한임베디드공학회논문지
• /
• 제5권4호
• /
• pp.175-184
• /
• 2010

This paper designs a virtual USB drive for mobile devices which gives an illusion of a traditional USB flash memory drive and provides capacity-free storage space over IP network. The virtual USB drive operating with a S3C2410 hardware platform and embedded linux consists of USB device driver, an iSCSI-enabled network stack, and a seamless USB/iSCSI tunneling module. For performance enhancement, it additionally provides a kernel-level seamless USB/iSCSI tunneling module and data sharing with symbol references among kernel modules. Experiments reveal that the kernel-level implementation can improve the I/O performance up to 8 percentage, as compared with the user-level implementation.

• KIEE International Transactions on Electrophysics and Applications
• /
• 제2C권5호
• /
• pp.258-261
• /
• 2002

Electrical forming dependent current-voltage (I-V) and numerically derived differential conductance(dI／dV) characteristics have been presented in the multi-layer nano-crystalline silicon／oxygen (no-Si／O) superlattice. Distinct staircase-like features, indicating the presence of resonant tunnel barriers, are clearly observed in the dc I-V characteristics. Also, all samples showed a continuous change in current and zero conductivity around OV corresponding to the Coulomb blockade in the calculated dI／dV-V curve. Also, Ra-man scattering measurement showed the presence of a nano-crystalline Si structure. This result becomes a step in the right direction for the fabrication of silicon-based optoelectronic and quantum devices as well as for the replacement of silicon-on-insulator (SOI) in high speed and low power silicon MOSFET devices of the future.

• 한국전기전자재료학회논문지
• /
• 제28권5호
• /
• pp.291-294
• /
• 2015

Recently, ZnO based oxide TFTs used in the flexible and transparent display devices are widely studied. To apply to OLED display switching devices, electrical performance and stability are important issues. In this study, to improve these electrical properties, we fabricated TFTs having Al doped Zinc Oxide (AZO) layer inserted between the gate insulator and ZnO layer. The AZO and ZnO layers are deposited by Atomic layer deposition (ALD) method. I-V transfer characteristics and stability of the suggested devices are investigated under the positive gate bias condition while the channel defects are also analyzed by the photoluminescence spectrum. The TFTs with AZO layer show lower threshold voltage ($V_{th}$) and superior sub-threshold slop. In the case of $V_{th}$ shift after positive gate bias stress, the stability is also better than that of ZnO channel TFTs. This improvement is thought to be caused by the reduced defect density in AZO/ZnO stack devices, which can be confirmed by the photoluminescence spectrum analysis results where the defect related deep level emission of AZO is lower than that of ZnO layer.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2009년도 제38회 동계학술대회 초록집
• /
• pp.257-257
• /
• 2010

One of the critical issues for applications of flexible organic thin film transistors (OTFTs) for flexible electronic systems is the electrical stabilities of the OTFT devices, including variation of the current on/off ratio ($I_{on}/I_{off}$), leakage current, threshold voltage, and hysteresis, under repetitive mechanical deformation. In particular, repetitive mechanical deformation accelerates the degradation of device performance at the ambient environment. In this work, electrical stabilities of the pentacene organic thin film transistors (OTFTs) employing multi-stack hybrid encapsulation layers were investigated under mechanical cyclic bending. Flexible bottom-gated pentacene-based OTFTs fabricated on flexible polyimide substrate with poly-4-vinyl phenol (PVP) dielectric as a gate dielectric were encapsulated by the plasma-deposited organic layer and atomic layer deposited inorganic layer. For cyclic bending experiment of flexible OTFTs, the devices were cyclically bent up to $10^5$ times with 5mm bending radius. In the most of the devices after $10^5$ times of bending cycles, the off-current of the OTFT with no encapsulation layers was quickly increased due to increases in the conductivity of the pentacene caused by doping effects from $O_2$ and $H_2O$ in the atmosphere, which leads to decrease in the $I_{on}/I_{off}$ and increase in the hysteresis. With encapsulation layers, however, the electrical stabilities of the OTFTs were improved significantly. In particular, the OTFTs with multi-stack hybrid encapsulation layer showed the best electrical stabilities up to the bending cycles of $10^5$ times compared to the devices with single organic encapsulation layer. Changes in electrical properties of cyclically bent OTFTs with encapsulation layers will be discussed in detail.

• 대한전자공학회:학술대회논문집
• /
• 대한전자공학회 2003년도 하계종합학술대회 논문집 V
• /
• pp.2637-2640
• /
• 2003

In this paper, we propose a simple and efficient data input/output block with high speed between Motorola MPC8XX microprocessor and memory devices. Proposed method is capable of high speed data read and write using the address decoder and the burst cycle between Motorola PowerPC based MPC8XX microprocessor and fixed address locating memory devices such as FIFO, PCMCIA card, and so on. Experimental results are given our findings and discussions.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1994년도 추계학술대회 논문집
• /
• pp.59-64
• /
• 1994

The Si-SiO$_2$interface trpas of the degraded short-channel SONOSFET memory devices were investigated using the charge pumping techniques. The degradation of devices with write/erase cycle appeared as the increase of the Si-SiO$_2$interface trap density. In order to determine the capture cross-section of the interface trap. I$\_$CP/-V$\_$GL/ characteristic curves were measured at different temperatures. Also, the spatial distributions of Si-SiO$_2$interface trap were examined by the variable-reverse bias boltage method.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 하계학술대회 논문집
• /
• pp.45-49
• /
• 2001

We have investigated physical and electrical properties of the Hf $O_2$/HfS $i_{x}$/ $O_{y}$ thin film for alternative gate dielectrics in the metal-oxide-semiconductor device. The oxidation of Hf deposited directly on the Si substrate results in the H $f_{x}$/ $O_{y}$ interfacial layer and the high-k Hf $O_2$film simultaneously. Interestingly, the post-oxidation N2 annealing of the H102/H1Si70y thin films reduces(increases) the thickness of an amorphous HfS $i_{x}$/ $O_{y}$ layer(Hf $O_2$ layer). This phenomenon causes the increase of the effective dielectric constant, while maintaining the excellent interfacial properties. The hysteresis window in C-V curves and the midgap interface state density( $D_{itm}$) of Hf $O_2$/HfS $i_{x}$/ $O_{y}$ thin films less than 10 mV and ~3$\times$10$^{11}$ c $m^{-2}$ -eV without post-metallization annealing, respectively. The leakage current was also low (1$\times$10-s A/c $m^2$ at $V_{g}$ = +2 V). It is believed that these excellent results were obtained due to existence of the amorphous HfS $i_{x}$/ $O_{y}$ buffer layer. We also investigated the charge trapping characteristics using Fowler-Nordheim electron injection: We found that the degradation of Hf $O_2$/HfS $i_{x}$/ $O_{y}$ gate oxides is more severe when electrons were injected from the gate electrode.e electrode.e.e electrode.e.

• 한국통신학회:학술대회논문집
• /
• 한국통신학회 2004년도 추계종합학술대회 논문 초록집
• /
• pp.267-267
• /
• 2004