• Proceedings of the Korean Nuclear Society Conference
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• 1995.05a
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• pp.973-979
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• 1995

The input equivalent noise charge (ENC) of hydrogenated amorphous silicon radiation detector diodes was measured and analyzed. The noise sources of amorphous silicon diodes were analyzed into three sources; shot noise, flicker noise and thermal noise from the contact resistance. By comparing the measured ENC with the calculated signal charge in uniform generation case, the signal-to-noise ratio (S/N) for the sample diodes is estimated as a function of the detector bias and the shaping time of Gaussian pulse shaper. The maximum S/N occurred at the bias level just above the full depletion voltage for shaping time of 2∼3 ${\mu}$sec. The developed method is useful in optimum design or amorphous silicon p-i-n diodes for charged particulate radiation spectroscopy.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.4
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• pp.255-260
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• 1998

Behavior of solid phase crystallizations (SPC) of RF sputtered and LPCVD amorphous hydrogenated silicon film were investigated. LPCVD films showed the higher degree of crystallinity and larger grain size than sputtered films. The applicable degree of crystallinity was also obtained from sputtered films. The deposition method of amorphous silicon film influenced the behavior of post annealing SPC. Observed degree of crystallinity of sputtered films strongly depended on the partial pressure of hydrogen in deposition. The higher deposition temperature of sputtering provided the better crystallinity after SPC. Due to the high degree of poly-crystallinity, the retardation of larger grain growth was observed on sputtering film.

• Journal of the Korean Institute of Telematics and Electronics
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• v.24 no.3
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• pp.453-458
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• 1987

Amorphous silicon thin-film transtors (TFT's) have been designed and fabricated on glass substrates. The hydrogenated amorphous silicon (a-Si:H) thin-film has been deposited by decomposing silane(SiH4) in hydorgen ambient by rf glow discharge method. Amorphous silicon nitride(a-Si:H) has been chosen as the gate dielectric material. It has been prepared by decomposing the mixed gas of silane(SiH4) and ammonia(NH3). The electrical properties and performance characteristics of the thin-film transistrs have been measured and compared with the requirements for the switching elements in liquid crystal flat panel display. The results show that liquid crystal flat panel displays can be fabricated using the thin-film transistors described in this paper.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.1
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• pp.112-116
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• 2007

We have investigated the hysteresis phenomenon of a hydrogenated amorphous silicon thin film transistor (a-Si:H TFT) and analyzed the effect of hysteresis phenomenon when a-Si:H TFT is a pixel element of active matrix organic light emitting diode (AMOLED). When a-Si:H TFT is addressed to different starting gate voltages, such as 10V and 5V, the measured transfer characteristics with 1uA at $V_{DS}$ = 10V shows that the gate voltage shift of 0.15V is occurred due to the different quantities of trapped charge. When the step gate-voltage in the transfer curve is decreased from 0.5V to 0.05V, the gate-voltage shift is decreased from 0.78V to 0.39V due to the change of charge do-trapping rate. The measured OLED current in the widely used 2-TFT pixel show that a gate-voltage of TFT in the previous frame can influence OLED current in the present frame by 35% due to the change of interface trap density induced by different starting gate voltages.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.339.1-339.1
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• 2014

In this paper we studied the application of inter-poly dielectric as silicon dioxide-like film was deposited by the higher energy assisting deposition (HEAD) process the modified CCP process, which enables low temperature (LT) process and improving film density. In these experiments the relative hydrogen concentration of $SiO_2$-like films deposited on silicon substrate were analyzed by the secondary ion mass spectroscopy (SIMS) and it was shown that our lower hydrogenated oxide (LHO) film prepared by HEAD process with the precursor contained the siloxane species had lower hydrogen concentration, $8{\times}10{\cdot}^{22}cm{\cdot}^3$ than that of the commercial undoped silicon glass (USG) film ($1{\times}10{\cdot}^{21}cm{\cdot}^3$) prepared by the high density plasma-chemical vapor deposition (HDP-CVD). We consider that the LHO film deposited by HEAD process used as high performance material into Flash memory devices.

• The Journal of the Korea institute of electronic communication sciences
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• v.16 no.2
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• pp.241-246
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• 2021

In this paper, hydrogenated amorphous silicon(a-Si:H) grating coupler with distributed Bragg reflector(DBR) is proposed to achieve high-efficiency nanophotonic radiator for Light Detection and Ranging(LiDAR) application. The DBR reduces downward leakage of the optical field below the grating region. As a result, the far-field intensity shows about 1.4 times stronger, compared to the common grating coupler without the DBR.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.12
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• pp.1009-1014
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• 2012

Hydrogenated amorphous silicon (${\alpha}$-Si:H) layers deposited by plasma enhanced chemical vapor deposition (PECVD) are investigated for use in silicon hetero-junction solar cells employing n-type crystalline silicon (c-Si) substrates. The optical and structural properties of silicon hetero-junction devices have been characterized using spectroscopy ellipsometry and high resolution cross-sectional transmission electron micrograph (HRTEM). In addition, the effective carrier lifetime is measured by the quasi-steady-state photocoductance (QSSPC) method. We have studied on the correlation between the order of ${\alpha}$-Si:H and the passivation quality at the interface of ${\alpha}$-Si:H/c-Si. Base on the result, we have fabricated a silicon hetero-junction solar cell incorporating the ${\alpha}$-Si:H passivation layer with on open circuit voltage ($V_{oc}$) of 637 mV.

• Bulletin of the Korean Chemical Society
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• v.31 no.10
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• pp.2909-2912
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• 2010

Hydrogenated microcrystalline silicon (${\mu}c$-Si:H) thin film for solar cells is prepared by plasma-enhanced chemical vapor deposition and physical properties of the ${\mu}c$-Si:H p-layer has been investigated. With respect to stable efficiency, this film is expected to surpass the performance of conventional amorphous silicon based solar cells and very soon be a close competitor to other thin film photovoltaic materials. Silicon in various structural forms has a direct effect on the efficiency of solar cell devices with different electron mobility and photon conversion. A Raman microscope is adopted to study the degree of crystallinity of Si film by analyzing the integrated intensity peaks at 480, 510 and $520\;cm^{-1}$, which corresponds to the amorphous phase (a-Si:H), microcrystalline (${\mu}c$-Si:H) and large crystals (c-Si), respectively. The crystal volume fraction is calculated from the ratio of the crystalline and the amorphous phase. The results are compared with high-resolution transmission electron microscopy (HR-TEM) for the determination of crystallinity factor. Optical properties such as refractive index, extinction coefficient, and band gap are studied with reflectance spectra.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.5
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• pp.501-508
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• 1988

This paper presents the light-induced effects on the elelctrical and optical properties of undoped and doped hydrogenated amorphous silicon films. The changes in the conductivities and the activation energies of various types of a-Si:H films due to the prolonged exposure to light have been characterized as a function of deposition conditions and illumination periods. The dark conductivity changes may be quenched for heavier doped a-Si:H films. We have also analyzed the variations of micro-structure of a-Si:H film such as silicon-hydrogen bondings in the rocking and stretching modes utilizing infrared spectroscopy. From the experimental results, it is elucidated that doping effects must be crucial to the degradations of the fundamental properties of a-Si:H due to light-induced effects.

• Nuclear Engineering and Technology
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• v.28 no.4
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• pp.397-404
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• 1996

The hydrogenated amorphous silicon (a-Si : H) holds good promise for radiation detection from its inherent merits over crystalline counterpart. For the application to alpha spectroscopy, the induced charge collection in a-Si : H pin detector diodes ons simulated based on a relevant non-uniform charge generation model. The simulation was peformed for the initial energy and the range of incident alpha particles, detector thickness and the operational parameters such as the applied reverse bias voltage and shaping time. From the simulation, the total charge collection was strongly affected by hole collection as expected. To get a reasonable signal generation, therefore, the hole collection should be seriously considered for detector operational parameters such as shaping time and reverse voltage etc. For the spectroscopy of alpha particle from common alpha sources, the amorphous silicon should have about 70${\mu}{\textrm}{m}$ thickness.