Browse > Article

Hysteresis Phenomenon of Hydrogenated Amorphous Silicon Thin Film Transistors for an Active Matrix Organic Light Emitting Diode  

Choi, Sung-Hwan (서울대학교 전기공학부)
Lee, Jae-Hoon (서울대학교 전기공학부)
Shin, Kwang-Sub (서울대학교 전기공학부)
Park, Joong-Hyun (서울대학교 전기공학부)
Shin, Hee-Sun (서울대학교 전기공학부)
Han, Min-Koo (서울대학교 전기공학부)
Publication Information
The Transactions of The Korean Institute of Electrical Engineers / v.56, no.1, 2007 , pp. 112-116 More about this Journal
Abstract
We have investigated the hysteresis phenomenon of a hydrogenated amorphous silicon thin film transistor (a-Si:H TFT) and analyzed the effect of hysteresis phenomenon when a-Si:H TFT is a pixel element of active matrix organic light emitting diode (AMOLED). When a-Si:H TFT is addressed to different starting gate voltages, such as 10V and 5V, the measured transfer characteristics with 1uA at $V_{DS}$ = 10V shows that the gate voltage shift of 0.15V is occurred due to the different quantities of trapped charge. When the step gate-voltage in the transfer curve is decreased from 0.5V to 0.05V, the gate-voltage shift is decreased from 0.78V to 0.39V due to the change of charge do-trapping rate. The measured OLED current in the widely used 2-TFT pixel show that a gate-voltage of TFT in the previous frame can influence OLED current in the present frame by 35% due to the change of interface trap density induced by different starting gate voltages.
Keywords
a-Si:H TFT; OLED; Hysteresis Phenomenon;
Citations & Related Records

Times Cited By SCOPUS : 0
연도 인용수 순위
  • Reference
1 A. Nathan, A. Kumar, K. Sakariya, P. Servati, S. Sambandan, and D. Striakhilev, 'Amorphous Silicon Thin Film Transistor Circuit Integration for Organic LED Displays on Glass and Plastic', IEEE Journal of Solid-State Circuits, vol. 39, pp.1477-1486, Sep. 2004   DOI   ScienceOn
2 Yue Kuo, Thin film transistors Materials and Processes, Kluwer academic publishers, p.83, 2004
3 D.A. Neamen, Semiconductor Physics & Devices, McGraw- Hill, p.492, 2003
4 K. Chatty, B. Banerjee, TP. Chow and R]. Gutmann, 'Hysteresis in transfer characteristics in 4H-SiC depletion/accumulation-mode MOSFETs', IEEE Electron Device Letters, 23, 330, 2002
5 Y.M. Ha, D.H. Oh, ].W. Chang, C.H. Ieon, S.H. Jeong, S.K. Hong, C.H. Lee, B.K. Lee, S.Y. Cha, 'Characteristics of LTPS AMOLEDs', The proceedings of the 1st international TFT conference, pp.212-215, 2005
6 R.M.A. Dawson, Z, Shen, D. A. Furst, S. Connor, J. Hsu, M. G. Kane, RG. Stewart, A. Ipri, C. N. King, P.J. Green, RT. Flegal, S. Pearson, W.A. Barrow, E. Dickey, K. Ping, S. Robinson, C.W. Tang, S. Van Slyke, F. Chen, J. Shi, M. H. Lu, and j.C, Sturm, 'The Impact of the Transient Response of Organic Light Emitting Diodes on the Design of Active Matrix OLED Displays', IEEE International Electron Device Meeting, pp. 875-878, 1998
7 B. K. Kim, O. Kim, H. ㅓJ Chung, J. W. Chang and Y. M. Ha, 'Recoverable residual image induced by hysteresis of thin film transistors in active matrix organic light emitting diode displays', Japanese Journal of Applied Physics, 43, 482, 2004   DOI
8 Kwang-Sub Shin, Iae-Hoon Lee, Sang-Geun Pa가 and Min-Koo Han, 'The channel length effect on the electrical stability of a-Si.H thin-film transistors for AMOLED', 2nd International TFT Conference 2006 (ITC '06), pp 78-81, Kitakyushu, Japan, January, 2006