• Applied Science and Convergence Technology
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• 제24권3호
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• pp.53-59
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• 2015

The field-effect transistors (FETs) with a graphene-based p-n junction channel were fabricated using the patterned self-assembled monolayers (SAMs). The self-assembled 3-aminopropyltriethoxysilane (APTES) monolayer deposited on $SiO_2$/Si substrate was patterned by hydrogen plasma using selective coating poly-methylmethacrylate (PMMA) as mask. The APTES-SAMS on the $SiO_2$ surface were patterned using selective coating of PMMA. The APTES-SAMs of the region uncovered with PMMA was removed by hydrogen plasma. The graphene synthesized by thermal chemical vapor deposition was transferred onto the patterned APTES-SAM/$SiO_2$ substrate. Both p-type and n-type graphene on the patterned SAM/$SiO_2$ substrate were fabricated. The graphene-based p-n junction was studied using Raman spectroscopy and X-ray photoelectron spectroscopy. To implement low voltage operation device, via ionic liquid ($BmimPF_6$) gate dielectric material, graphene-based p-n junction field effect transistors was fabricated, showing two significant separated Dirac points as a signature for formation of a p-n junction in the graphene channel.

• 한국세라믹학회지
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• 제42권2호
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• pp.94-98
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• 2005

[ $RuO_2$ ]는 DRAM과 FRAM소자에서 고유전 capacitors의 저전극물질로서 폭넓게 연구되고 있다. 본 연구에서는 XRD, SEM, AFM 분석 등을 통하여 금속유기 화학 증착법(MOCVD)으로 $RuO_2$ 증착시 핵생성에 영향을 미치는 수소, 산소, 아르곤 ECR플라즈마 전처리 효과를 조사하였으며, 아르곤 ECR플라즈마 전처리의 경우 가장 높은 핵생성 밀도를 나타내었다. ECR 플라즈마 전처리를 통한 $RuO_2$의 핵생성 향상 메카니즘은 아르곤이나 수소 ECR 플라즈마는 TiN막 표면의 질소나 산소원자를 제거하고 따라서 TiN막 표면은 Ti-rich TiN으로 바뀌게 되는 것이다.

• 한국재료학회지
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• 제9권5호
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• pp.528-532
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• 1999

Y$_2$O$_3$films were grown on SiO$_2$-covered Si(111), and hydrogen-terminated Si(111), and hydrogen-terminated Si(111) substrates at 50$0^{\circ}C$ by ultrahigh vacuum ionized cluster beam deposition (UHV-ICB). The microstructures and growth behavior of these films have been investigated by transmission electron diffraction (TED) and high-resolution transmission electron microscopy(HREM). The TED results show that the $Y_2$O$_3$grown on the SiO$_2$-Si has the epitaxial relationship of (11-1)Y$_2$O$_3$∥(111)Si and [-110]Y$_2$O$_3$∥[-110]Si. The film on the H-Si substrate contains YS\ulcorner and amorphous YSi\ulcornerO\ulcorner layers at the interface, having the orientation relationship each other. For the YSi\ulcorner and the Si substrate, the relationship is (0001)YSi\ulcorner∥(111)Si and [1-210]YSi\ulcorner∥∥[-110]Si. For the $Y_2$O$_3$and the YSi\ulcorner ; the relationship is as follows: (11-1)Y$_2$O$_3$∥(0001)YSi\ulcorner and [-110]Y$_2$O$_3$∥[1-210]YSi\ulcorner(111)Y$_2$O$_3$∥(0001)YSi\ulcorner and [-110]Y$_2$O$_3$∥[1-210]YSi\ulcorner. Explanation is given to describe the formation mechanisms of the interfacial phases of SiO\ulcorner, YSi\ulcornerO\ulcorner and YSi\ulcorner. It is shown that the crystallinity of the $Y_2$O$_3$film on the SiO$_2$-Si(111) is better than that of $Y_2$O$_3$on H-Si(111).

• 한국재료학회지
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• 제14권12호
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• pp.835-839
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• 2004

The diamond thin films was deposited on Si(100) substrate by Hot Filament Chemical Vapor Deposition (HFCVD) method using supplied the $CH_{3}OH/H_{2}O$ mixtured gas with excess H_{2} gas. The role of hydrogen ion as the growth mechanism of the diamond deposit was examined and compared the $CH_{3}OH/H_{2}O$ with the $CH_4/H_2$. Pressures in the range of $1.1\sim290{\times}10^2$ Pa were applied and using $3.4\sim4.4$ kw power. It was investigated by Scanning Electron Microscopy(SEM) and Raman spectroscopy The H ion was etching the graphite and restrained from $sp^3\;to\;sp^2$. But excess $H_2$ gas was not helped diamond deposit using $CH_{3}OH/H_{2}O$ mixtured gas. It was shown that the role of hydrogen ion of deposited diamond films using $CH_{3}OH/H_{2}O$ was different from $CH_4/H_2$.

• 폴리머
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• 제38권6호
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• pp.809-814
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• 2014

전류 감응형 바이오센서에 응용하기 위해 전도성 고분자 마이크로튜브 어레이를 제작하였다. Poly(3,4-ethylenedioxythiophene)/poly(4-styrenesulfonic acid)(PEDOT/PSS) composite을 전도성 접착제로 하여 템플릿을 전극에 고정한 후 EDOT을 전기화학적으로 중합하였다. 마이크로튜브 어레이는 자체의 넓은 표면적으로 인해 감도 높은 바이오센서로 응용될 수 있으나, 주요 표적물질 중의 하나인 과산화수소에 대한 전기화학적 반응이 느렸다. 과산화수소 산화에 대한 감도를 향상시키기 위해 어레이 전극에 금을 도포하였다. 증착법과 전기화학적 석출법 두 가지 방법을 시도하여 금을 처리하였는데, 이렇게 처리한 전극은 모두 과산화수소에 대한 반응이 크게 향상되었다. 따라서 전도성 고분자 마이크로튜브 어레이에 금을 도포함으로써 과산화수소를 표적물질로 하는 감도 높은 바이오센서 제작이 가능할 것으로 기대된다.

• Tribology and Lubricants
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• 제21권3호
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• pp.107-113
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• 2005

Micro/nano adhesion and friction properties of self-assembled monolayers (SAMs) with different head- and end-group were experimentally studied according to the coating methods. Various kinds of SAM having different spacer chains (C10 and C18), head-group and end-group were deposited onto Si-wafer by dipping and chemical vapour deposition (CVD) methods under atmospheric pressure, where the deposited SAM resulted in the hydrophobic nature. The adhesion and friction properties between tip and SAM surfaces under nano scale applied load were measured using an atomic force microscope (AFM) and also those under micro scale applied load were measured using a ball-on-flat type micro-tribotester. Surface roughness and water contact angles were measured with SPM (scanning probe microscope) and contact anglemeter respectively. Results showed that water contact angles of SAMs with the end-group of fluorine show higher relatively than those of hydrogen. SAMs with the end-group of fluorine show lower nano-adhesion but higher micro/nanofriction than those with hydrogen. Water contact angles of SAMs coated by CVD method show high values compared to those by dipping method. SAMs coated by CVD method show the increase of nano-adhesion but the decrease of nano-friction. Nano-adhesion and friction mechanism of SAMs with different end-group was proposed in a view of size of fluorocarbon molecule.

• 한국산학기술학회논문지
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• 제22권2호
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• pp.644-650
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• 2021

본 연구는 지구 온난화의 주요 원인인 이산화탄소를 이용하여 메탄의 개질반응 특성을 수행하였다. 이산화탄소와의 메탄 분해 반응을 전이금속 촉매인 주석을 사용하여 수행되었으며, 주석의 분해 반응성은 니켈, 철과 같은 전이 금속보다 낮으며, 대부분의 분해 반응은 고체 상태 촉매하에 수행된다. 반면에 주석의 녹는점은 505.03K로 액상 촉매하에서 분해가 발생된다. 주석을 사용하는 경우 액상으로 반응하며 메탄이 분해되어 생성되는 고체상 탄소가 촉매에 침적되어 비활성화되는 것을 것을 방지하는 장점이 있다. 이산화탄소를 사용하여 메탄을 분해하는 경우 일산화탄소와 수소를 생성한다. 촉매의 활성과 수명을 높이기 위해 Ni를 사용한 경우 촉매 활성이 향상되었다. 본 연구에서는 과잉습식함침법을 이용하여 촉매를 합성하였으며, 반응 온도, 공간 속도에 따른 활성과 촉매 재생 가능성을 타진하였다. 탄소가 침적된 주석의 촉매 재생 온도는 1023 K로 나타났으며, 니켈을 조촉매로 사용하고 물을 공급하므로써 반응성이 향상되는 것으로 나타났다.

• 공업화학
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• 제22권1호
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• pp.31-36
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• 2011

사불화탄소($CF_4$)는 반도체 제조공정에서 플라즈마 에칭과 화학기상증착(CVD)에서 사용되어온 가스이다. $CF_4$는 적외선을 강하게 흡수하고 대기 중 잔류시간이 길어서 지구온난화에 영향을 미치기 때문에 고효율의 분해가 필요하다. 본 연구에서는 플라즈마와 워터젯을 결합하여 방전영역을 증가시키고 다량의 OH 라디칼을 생성시켜 $CF_4$를 고효율로 분해할 수 있는 워터젯 글라이딩 아크 플라즈마 시스템을 개발하였다. 실험 변수로 전극 형태, 전극 각도, 가스 노즐직경, 전극 간격과 전극 길이를 취하였다. 변수실험을 통하여 Arc 형태의 전극에서 전극 각도가 $20^{\circ}$, 가스 노즐 직경이 3 mm, 전극 간격이 3 mm, 전극 길이가 120 mm일 때 $CF_4$ 분해율은 최고 93.4%까지 도달하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.254-255
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• 2012

Interest in nano-crystalline silicon (nc-Si) thin films has been growing because of their favorable processing conditions for certain electronic devices. In particular, there has been an increase in the use of nc-Si thin films in photovoltaics for large solar cell panels and in thin film transistors for large flat panel displays. One of the most important material properties for these device applications is the macroscopic charge-carrier mobility. Hydrogenated amorphous silicon (a-Si:H) or nc-Si is a basic material in thin film transistors (TFTs). However, a-Si:H based devices have low carrier mobility and bias instability due to their metastable properties. The large number of trap sites and incomplete hydrogen passivation of a-Si:H film produce limited carrier transport. The basic electrical properties, including the carrier mobility and stability, of nc-Si TFTs might be superior to those of a-Si:H thin film. However, typical nc-Si thin films tend to have mobilities similar to a-Si films, although changes in the processing conditions can enhance the mobility. In polycrystalline silicon (poly-Si) thin films, the performance of the devices is strongly influenced by the boundaries between neighboring crystalline grains. These grain boundaries limit the conductance of macroscopic regions comprised of multiple grains. In much of the work on poly-Si thin films, it was shown that the performance of TFTs was largely determined by the number and location of the grain boundaries within the channel. Hence, efforts were made to reduce the total number of grain boundaries by increasing the average grain size. However, even a small number of grain boundaries can significantly reduce the macroscopic charge carrier mobility. The nano-crystalline or polymorphous-Si development for TFT and solar cells have been employed to compensate for disadvantage inherent to a-Si and micro-crystalline silicon (${\mu}$-Si). Recently, a novel process for deposition of nano-crystralline silicon (nc-Si) thin films at room temperature was developed using neutral beam assisted chemical vapor deposition (NBaCVD) with a neutral particle beam (NPB) source, which controls the energy of incident neutral particles in the range of 1~300 eV in order to enhance the atomic activation and crystalline of thin films at room temperature. In previous our experiments, we verified favorable properties of nc-Si thin films for certain electronic devices. During the formation of the nc-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. The more resent work on nc-Si thin film transistors (TFT) was done. We identified the performance of nc-Si TFT active channeal layers. The dependence of the performance of nc-Si TFT on the primary process parameters is explored. Raman, FT-IR and transmission electron microscope (TEM) were used to study the microstructures and the crystalline volume fraction of nc-Si films. The electric properties were investigated on Cr/SiO2/nc-Si metal-oxide-semiconductor (MOS) capacitors.

• 한국결정성장학회지
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• 제22권3호
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• pp.122-126
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• 2012

$Al_2O_3$ 2 wt%가 도핑 된 ZnO(AZO) 타겟으로RF 스퍼터링 장비를 사용하여 $H_2/(Ar+H_2)$ 가스 비율에 따른 AZO 박막을 증착 후, 이들 박막의 특성을 조사하였다. AZO 박막은 $200^{\circ}C$, $2{\times}10^{-2}$ 공정조건에서 $H_2/(Ar+H_2)$ 가스 비율을 변화시키면서 증착하였다. AZO박막증착 중 수소가스의 첨가는 박막의 특성에 영향을 미쳤다. $H_2/(Ar+H_2)$ 가스 비율이 2.5 %일 때 비 저항(${\sim}9.21{\times}10^{-4}\;{\Omega}cm$)과 전자 이동도(${\sim}17.8\;cm^2/Vs$)는 각각 최소값과 최대값을 나타내었다. $H_2/(Ar+H_2)$ 가스 비율이 2.5 % 이상일 때는 $H_2/(Ar+H_2)$ 가스 비율이 증가할수록 비저항은 점차로 증가하였고 전자 이동도는 점차적으로 감소하였다. 전자 운반자 농도는 $H_2/(Ar+H_2)$ 가스 비율이 증가함에 따라 0 %에서 7.5 %까지 점차로 증가하였다. $H_2/(Ar+H_2)$ 가스 비율에 따라 증착된 박막의 가시광선 파장 범위에서 평균 광 투과도는 90 % 이상이었고 성장방향은 [002]이었다.