• 제목/요약/키워드: Hydrogen deposition

검색결과 566건 처리시간 0.026초

Fundamentals of Underpotential Deposition : Importance of Underpotential Deposition in Interfacial Electrochemistry

  • Lee Jong-Won;Pyun Su-Il
    • 전기화학회지
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    • 제4권4호
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    • pp.176-181
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    • 2001
  • 본 논문은 계면 전기화학에서의 underpotential deposition (UPD)의 중요성에 초점을 맞추어 UPD의 기본원리에 대하여 다루었다. 우선 underpotential shift와 electrosorption valency에 대한 설명과 함께 UPD의 기본개념을 기술하였다. 다음으로 금속표면에서의 수소발생 또는 금속내부로의 수소흡수 반응 이전에 관찰되는 수소의 UPD를 설명하였고, 특히 금속 표면에서의 흡착위치와 Pd으로의 흡수기구에 대하여 중점적으로 기술하였다. 마지막으로, 계면 전기화학의 여러 분야에서 UPD와 관련된 중요한 인자들을 응용적인 측면에서 간략히 설명하였다.

ECR-PECVD 방법으로 증착된 a-C:H 박막의 수소함량 측정 (Measurement of hydrogen content in a-C:H films prepared by ECR-PECVD)

  • 손영호;정우철;정재인;김인수;배인호
    • 한국진공학회지
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    • 제10권1호
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    • pp.119-126
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    • 2001
  • ECR-PECVD 방법으로 ECR 플라즈마 소스 power, $CH_4/H_2$ 가스 혼합비와 유량, 증착시간 및 기판 bias 전압을 변화시켜 가면서 수소가 함유된 비정질 탄소 박막을 증착하고, 증착조건에 따라서 박막 내부에 함유되어 있는 수소함량 변화를 2.5 MeV 헬륨 이온빔을 사용하는 ERDa로 측정하였다. ERDA의 결과와 hES 및 RBS에 의한 성분분석으로부터 본 실첨에서 증착된 박막은 탄소와 수소만으로 구성 되어있음을 확인할 수 있었고, FTIR의 결과로부터 박막 증착조건에 따라서 박막 내부에 함유되어 있는 수소함량이 변화함을 알 수 있었다. 기판 bias 전압을 증가시킬수록 이온충돌 현상이 두드러져 탄소와 결합하고 있던 수소원자들이 떨어져 나가는 탈수소화 현상으로 수소함량이 크게 감소됨을 알 수 있었다. 그 밖의 조건에서는 박막증착 초기에는 수소보다 탄소량이 좀 더 많다가 점차적으로 수소함량이 증가되었고, 이때 박막 내부에 함유되어 있는 수소함량은 45~55% 범위 내에 있음을 확인할 수 있었다.

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진공여과증착법을 이용한 SWNT-PdOx계 수소센서 (Hydrogen sensor of SWNT-PdOx system using the vacuum filtering deposition method)

  • 김일진;박기배
    • 센서학회지
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    • 제19권2호
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    • pp.87-91
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    • 2010
  • Hydrogen gas sensors were fabricated using $PdO_x$ loaded with SWNTs. The nanoparticle powders of $SWNT_s-PdO_x$ composite were deposited on Si wafer substrates by a vacuum filtering deposition method. The fabricated sensors were tested against hydrogen gas. The composition ratio that exhibited the highest response to hydrogen gases was SWNTs : $PdO_x$ = 98 : 2 in wt% ratio at operating temperature of about $150^{\circ}C$. The response and recovery times were shorter than 1.0 min. in presence of 1000 ppm hydrogen.

Modeling on Hydrogen Effects for Surface Segregation of Ge Atoms during Chemical Vapor Deposition of Si on Si/Ge Substrates

  • Yoo, Kee-Youn;Yoon, Hyunsik
    • Korean Chemical Engineering Research
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    • 제55권2호
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    • pp.275-278
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    • 2017
  • Heterogeneous semiconductor composites have been widely used to establish high-performance microelectronic or optoelectronic devices. During a deposition of silicon atoms on silicon/germanium compound surfaces, germanium (Ge) atoms are segregated from the substrate to the surface and are mixed in incoming a silicon layer. To suppress Ge segregation to obtain the interface sharpness between silicon layers and silicon/germanium composite layers, approaches have used silicon hydride gas species. The hydrogen atoms can play a role of inhibitors of silicon/germanium exchange. However, there are few kinetic models to explain the hydrogen effects. We propose using segregation probability which is affected by hydrogen atoms covering substrate surfaces. We derived the model to predict the segregation probability as well as the profile of Ge fraction through layers by using chemical reactions during silicon deposition.

스퍼터 증착 방식으로 제조된 Pd-Ni 합금 수소 분리막 연구 (A Study on the Pd-Ni Alloy Hydrogen Membrane Using the Sputter Deposition)

  • 김동원;박정원;김상호;박종수
    • 한국표면공학회지
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    • 제37권5호
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    • pp.243-248
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    • 2004
  • A palladium-nikel(Pd-Ni) alloy composite membrane has been fabricated on microporous nickel support formed with nickel powder. Plasma surface treatment process is introduced as pre-treatment process instead of HCI activation. Pd coating layer was prepared by dc magnetron sputtering deposition after $H_2$ plasma surface treatment. Palladium-nickel alloy composite layer had a fairly uniform and dense surface morphology. The membrane was characterized by permeation experiments with hydrogen and nitrogen gases at temperature of 773 K and pressure of 2.2psi. The hydrogen permeance was 6 ml/minㆍ$\textrm{cm}^2$ㆍatm and the selectivity was 120 for hydrogen/nitrogen($H_2$/$N_2$) mixing gases at 773 K.

HCVD 방법으로 제조된 MgH2의 Cycling 특성 (Cycling Characteristics of MgH2 madeby Hydriding Chemical Vapor Deposition Method)

  • 박경덕;한정섭
    • 대한금속재료학회지
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    • 제49권12호
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    • pp.945-949
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    • 2011
  • The cycling characteristics of $MgH_2$ made by hydriding chemical vapor deposition method have been investigated. The particle size of $MgH_2$ made by HCVD was about $1{\mu}m$. The cycling experiment was performed by measuring hydrogen quantity absorbed at 673 K and under 35 atm of hydrogen pressure for 30 min. Up to 3 cycles the hydrogen storage capacity increased, but from 4 to 6 cycles the hydrogen storage capacity decreased rapidly. During this cycling test the particle size increased gradually from $1{\mu}m$ to $6{\mu}m$. This increase was due to sintering by the high reaction temperature and the heat of reaction during hydrogen absorption. From 7 to 30 cycles, the hydrogen storage capacity was maintained at 5.8 wt%. Even after 30 cycles, the plateau pressure was constant.

핵연료 피복관 부식생성물 부착에 대한 용존수소의 영향 (Effect of Dissolved Hydrogen on Fuel Crud Deposition)

  • 백승헌;김우철;심희상;임경수;원창환;허도행
    • Corrosion Science and Technology
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    • 제13권2호
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    • pp.56-61
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    • 2014
  • The purpose of this work is to investigate the effect of dissolved hydrogen concentration on crud deposition onto the fuel cladding surface in the simulated primary environments of a pressurized water reactor. Crud deposition tests were conducted in the dissolved hydrogen concentration range of 5~70 cc/kg at $325^{\circ}C$ for 14 days. Needle-shaped NiO deposits were formed in the hydrogen range of 5~25 cc/kg, while polygonal nickel ferrite deposits were observed at a hydrogen concentration above 35 cc/kg. However, the dissolved hydrogen content seems to have little effect on the amount of crud deposits.

Physical Vapor Deposition 방법으로 제조된 Al-Ni 전극의 두께가 알칼라인 수전해 수소발생반응에 미치는 영향 연구 (Understanding the Effect on Hydrogen Evolution Reaction in Alkaline Medium of Thickness of Physical Vapor Deposited Al-Ni Electrodes)

  • 한원비;조현석;조원철;김창희
    • 한국수소및신에너지학회논문집
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    • 제28권6호
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    • pp.610-617
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    • 2017
  • This paper presents a study of the effect of thickness of porous Al-Ni electrodes, on the Hydrogen Evolution Reaction (HER) in alkaline media. As varying deposition time at 300 W DC sputtering power, the thickness of the Al-Ni electrodes was controlled from 1 to $20{\mu}m$. The heat treatment was carried out in $610^{\circ}C$, followed by selective leaching of the Al-rich phase. XRD studies confirmed the presence of $Al_3Ni_2$ intermetallic compounds after the heat treatment, indicating the diffusion of Ni from the Ni-rich phase to Al-rich phase. The porous structure of the Al-Ni electrodes after the selective leaching of Al was also confirmed in SEM-EDS analysis. The double layer capacitance ($C_{dl}$) and roughness factor ($R_f$) of the electrodes were increased for the thicker Al-Ni electrodes. As opposed to the general results in above, there were no further improvements of the HER activity in the case of the electrode thickness above $10{\mu}m$. This result may indicate that the $R_f$ is not the primary factor for the HER activity in alkaline media.

Fabrication of Metal-Semiconductor Interface in Porous Silicon and Its Photoelectrochemical Hydrogen Production

  • Oh, Il-Whan;Kye, Joo-Hong;Hwang, Seong-Pil
    • Bulletin of the Korean Chemical Society
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    • 제32권12호
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    • pp.4392-4396
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    • 2011
  • Porous silicon with a complex network of nanopores is utilized for photoelectrochemical energy conversion. A novel electroless Pt deposition onto porous silicon is investigated in the context of photoelectrochemical hydrogen generation. The electroless Pt deposition is shown to improve the characteristics of the PS photoelectrode toward photoelectrochemical $H^+$ reduction, though excessive Pt deposition leads to decrease of photocurrent. Furthermore, it is found that a thin layer (< 10 ${\mu}m$) of porous silicon can serve as anti-reflection layer for the underlying Si substrate, improving photocurrent by reducing photon reflection at the Si/liquid interface. However, as the thickness of the porous silicon increases, the surface recombination on the dramatically increased interface area of the porous silicon begins to dominate, diminishing the photocurrent.

원자층증착법을 이용한 수소 생성용 광전기화학 전극 소재 개발 동향 (Recent Developments in H2 Production Photoelectrochemical Electrode Materials by Atomic Layer Deposition)

  • 한정환
    • 한국분말재료학회지
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    • 제25권1호
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    • pp.60-68
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    • 2018
  • The design and fabrication of photoelectrochemical (PEC) electrodes for efficient water splitting is important for developing a sustainable hydrogen evolution system. Among various development approaches for PEC electrodes, the chemical vapor deposition method of atomic layer deposition (ALD), based on self-limiting surface reactions, has attracted attention because it allows precise thickness and composition control as well as conformal coating on various substrates. In this study, recent research progress in improving PEC performance using ALD coating methods is discussed, including 3D and heterojunction-structured PEC electrodes, ALD coatings of noble metals, and the use of sulfide materials as co-catalysts. The enhanced long-term stability of PEC cells by ALD-deposited protecting layers is also reviewed. ALD provides multiple routes to develop improved hydrogen evolution PEC cells.