• Transactions on Electrical and Electronic Materials
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• v.7 no.3
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• pp.118-122
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• 2006

Diamond-like carbon (DLC) films were prepared on silicon substrates by the RF PECVD (Plasma Enhanced Chemical Vapor Deposition) method using methane $(CH_4)$ and hydrogen $(H_2)$ gas. We examined the effects of the post annealing temperature on the tribological properties of the DLC films using friction force microscopy (FFM). The films were annealed at various temperatures ranging from 300 to $900^{\circ}C$ in steps of $200^{\circ}C$ using RTA equipment in nitrogen ambient. The thickness of the film was observed by scanning electron microscopy (SEM) and surface profile analysis. The surface morphology and surface energy of the films were examined using atomic force microscopy and contact angle measurement, respectively. The hardness of the DLC film was measured as a function of the post annealing temperature using a nano-indenter. The tribological characteristics were investigated by atomic force microscopy in FFM mode.

• Journal of the Korean institute of surface engineering
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• v.56 no.3
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• pp.192-200
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• 2023

Graphene, a two-dimensional material, has shown great potential in a variety of applications including microelectronics, optoelectronics, and graphene-based batteries due to its excellent electronic conductivity. However, the production of large-area, high-quality graphene remains a challenge. In this study, we investigated graphene growth on electrolytic copper foil using thermochemical vapor deposition (TCVD) to achieve a similar level of quality to the cold-rolled copper substrate at a lower cost. The combined effects of pre-annealing time, graphenized temperature, and partial pressure of hydrogen on graphene coverage and domain size were analyzed and correlated with the roughness and crystallographic texture of the copper substrate. Our results show that controlling the crystallographic texture of copper substrates through annealing is an effective way to improve graphene growth properties, which will potentially lead to more efficient and cost-effective graphene production. At a hydrogen partial pressure that is disadvantageous in graphene growth, electrolytic copper had an average size of 8.039 ㎛², whereas rolled copper had a size of 19.092 ㎛², which was a large difference of 42.1% compared to rolled copper. However, at the proper hydrogen partial pressure, electrolytic copper had an average size of 30.279 ㎛² and rolled copper had a size of 32.378 ㎛², showing a much smaller difference of 93.5% than before. This observation suggests this potentially leads the way for more efficient and cost-effective graphene production.

• Corrosion Science and Technology
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• v.8 no.6
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• pp.217-222
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• 2009

The production of advanced high strength steels requires the improvement of cooling technology. The use of high cooling rates allows relatively low levels of expensive alloying additions to ensure sufficient hardenability. In classical annealing and hot-dip galvanizing lines a mixing station is used to provide atmosphere gas containing 3-5% hydrogen and 97-95% nitrogen in the various sections of the furnace, including the rapid cooling section. Heat exchange enhancement in this cooling section can be insured by the increased hydrogen concentration. Drever International developed a patented improvement of cooling technology based on the following features: pure hydrogen gas is injected only in the rapid cooling section whereas the different sections of the furnace are supplied with pure nitrogen gas; the control of flows through atmosphere gas management allows to get high hydrogen concentration in cooling section and low hydrogen content in the other furnace zones. This cooling technology development insures higher cooling rates without additional expensive hydrogen gas consumption and without the use of complex sealing equipments between zones. In addition reduction in electrical energy consumption is obtained. This atmosphere control development can be combined with geometrical design improvements in order to get optimised cooling technology providing high cooling rates as well as reduced strip vibration amplitudes. Extensive validation of theoretical research has been conducted on industrial lines. New lines as well as existing lines, with limited modifications, can be equipped with this new development. Up to now this technology has successfully been implemented on 6 existing and 7 new lines in Europe and Asia.

• The Korean Journal of Ceramics
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• v.1 no.4
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• pp.185-190
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• 1995

Tribological behavior of the diamond-like carbon (DLC) films sliding on floppy disk has been investigated. Hydrogenated DLC films have been prepared by plasma enhanced chemical vapor deposition (PECVD) using methane and hydrogen mixture in different volume ratios on ferrite substrates. DLC films show lower friction coefficients (0.2~0.4) than those of the uncoated ferrite(0.4~0.5). DLC films containing more hydrogen exhibit higher wear resistance. To investigate the roughness effect on wear, the substrates were polished with SiC papers prior to deposition. Too fine or too rough DLC surfaces result in poor wear resistance. Wear resistance of annealed DLC films at higher temperature slightly increases with respect to as-deposited film.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.9
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• pp.789-794
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• 2008

Zinc oxide (ZnO) has been widely studied for its practical applications such as transparent conduction electrodes for flat panel displays and solar cells. Especially, ZnO films show good chemical stability against hydrogen plasma, absence of toxicity, abundance in nature, and then suitable for photovoltaic applications. However, the fabrication process of thin film solar cells require a high substrate temperature and/or post heat treatment. Therefore, the layers have to withstand high temperatures, requiring an excellent stability without degrading their electronic and optical properties. In this paper, we investigated the stability of zinc oxide (ZnO) films doped with aluminum and hydrogen. Doped ZnO films were prepared by r.f. magnetron sputter and followed by heat treatment at different temperatures and for various times.

• Journal of Hydrogen and New Energy
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• v.30 no.5
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• pp.455-464
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• 2019

Experiments were conducted to investigate the sensitivity of steel plate oxidation with temperature in a simulated furnace. Used steel plates were a general steel and a high tensile steel. Porous media burner (PM burner) used in model furnace was made for uniform temperature profile. The surrounding temperature was controlled by adjusting the flow rate of the mixture in the combustor. Oxide layer analysis was performed using SEM image analysis and EDS line scanning. Both steel sheets showed a tendency to increase the thickness of the steel sheet surface oxide layer as the temperature increases, and it was confirmed that the flaking phenomenon in surface oxidation layer appeared when the temperature was above a certain temperature.

• Proceedings of the Korean Vacuum Society Conference
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• 2009.08a
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• pp.79-79
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• 2009

• Proceedings of the Korean Vacuum Society Conference
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• 2009.08a
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• pp.147-147
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• 2009

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.122-122
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• 2008

Recently, Metal/Alumina/Silicon-Nitride/Silicon-Oxide/Silicon (MANOS) structures are one of the most attractive candidates to realize vertical scaling of high-density NAND flash memory [1]. However, as ANO layers are miniaturized, negative and positive bias temperature instability (NBTI/PBTI), such as the flat band voltage shift, ${\Delta}V_{FB}$, the interfacial trap density increase, ${\Delta}D_{it}$, the gate leakage current, ${\Delta}I_G$. and the retention characteristics, in MONOS capacitors, becomes an important issue in terms of reliability. It is well known that tunnel oxide degradation is a result of the oxide and interfacial traps generation during FN (Fowler-Nordheim) stress [2]. Because the bias temperature stress causes an increase of both interfacial-traps and fixed oxide charge could be a factor, witch can degrade device reliability during the program and erase operation. However, few studies on NBTI/PBTI have been conducted on improving the reliability of MONOS devices. In this work, we investigate the effect of post-annealing gas on bias temperature instability (BTI), such as the flat band voltage shift, ${\Delta}V_{FB}$, the interfacial trap density shift, ${\Delta}I_G$ retention characteristics, and the gate leakage current characteristics of MANOS capacitors. MANOS samples annealed at $950^{\circ}C$ for 30 s by a rapid thermal process were treated via additional annealing in a furnace, using annealing gases $N_2$ and $N_2-H_2$ (2 % hydrogen and 98 % nitrogen mixture gases) at $450^{\circ}C$ for 30 min. MANOS samples annealed in $N_2-H_2$ ambient had the lowest flat band voltage shift, ${\Delta}V_{FB}$ = 1.09/0.63 V at the program/erase state, and the good retention characteristics, 123/84 mV/decade at the program/erase state more than the sample annealed at $N_2$ ambient.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.438-438
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• 2009

We have investigated the effect of forming gas annealing for Upgraded Metallurgical Grade (UMG)-silicon solar cell in order to obtain low-cost high-efficiency cell using post deposition anneal at a relatively low temperature. We have observed that high concentration hydrogenation effectively passivated the defects and improved the minority carrier lifetime, series resistance and conversion efficiency. It can be attributed to significantly improved hydrogen-passivation in high concentration hydrogen process. This improvement can be explained by the enhanced passivation of silicon solar cell with antireflection layer due to hydrogen re-incorporation. The results of this experiment represent a promising guideline for improving the high-efficiency solar cells by introducing an easy and low cost process of post hydrogenation in optimized condition.