• JSTS:Journal of Semiconductor Technology and Science
• /
• 제1권2호
• /
• pp.95-102
• /
• 2001

Hafnium oxide thin films for gate dielectric were deposited at $300^{\circ}C$ on p-type Si (100) substrates by plasma enhanced chemical vapor deposition (PECVD) and annealed in $O_2$ and $N_2$ ambient at various temperatures. The effect of hydrogen treatment in 4% $H_2$ at $350^{\circ}C$ for 30 min on the electrical properties of $HfO_2$for gate dielectric was investigated. The flat-band voltage shifts of $HfO_2$capacitors annealed in $O_2$ambient are larger than those in $N_2$ambient because samples annealed in high oxygen partial pressure produces the effective negative charges in films. The oxygen loss in $HfO_2$films was expected in forming gas annealed samples and decreased the excessive oxygen contents in films as-deposited and annealed in $O_2$ or $N_2$ambient. The CET of films after hydrogen forming gas anneal almost did not vary compared with that before hydrogen gas anneal. Hysteresis of $HfO_2$films abruptly decreased by hydrogen forming gas anneal because hysteresis in C-V characteristics depends on the bulk effect rather than $HfO_2$/Si interface. The lower trap densities of films annealed in $O_2$ambient than those in $N_2$were due to the composition of interfacial layer becoming closer to $SiO_2$with increasing oxygen partial pressure. Hydrogen forming gas anneal at $350^{\circ}C$ for samples annealed at various temperatures in $O_2$and $N_2$ambient plays critical role in decreasing interface trap densities at the Si/$SiO_2$ interface. However, effect of forming gas anneal was almost disappeared for samples annealed at high temperature (about $800^{\circ}C$) in $O_2$ or $N_2$ambient.

• Transactions on Electrical and Electronic Materials
• /
• 제6권5호
• /
• pp.214-220
• /
• 2005

The ferroelectric properties of the $Pt/PZT(Pb(Zr,Ti)O_3)/Pt$ capacitors are severely degraded when they are annealed in hydrogen-containing environment. Hydrogen atoms created by the catalytic reaction of Pt top electrode during annealing in hydrogen ambient penetrate into PZT films and generate oxygen vacancies by the reduction of the PZT films, which is likely to cause the degradation. The degree of hydrogen-induced degradation and the direction of voltage shift in P-E curves of the pre-poled PZT capacitors after annealing in hydrogen ambient is dependent on the polarity of the pre-poling voltage. This implies that oxygen vacancies causing hydrogen induced degradation are generated by hydrogen ions having a polarity. The degraded ferroelectricity of the PZT capacitors can be effectively recovered by the shift of oxygen vacancies toward the Pt top electrode interface during post-annealing in oxygen environment with applying negative unipolar stressing.

• Transactions on Electrical and Electronic Materials
• /
• 제10권3호
• /
• pp.93-96
• /
• 2009

The Al-doped ZnO (AZO) films were deposited on a glass substrate by RF magnetron sputtering in pure Ar and $Ar+H_2$ gas ambient at temperature of $100^{\circ}C$ and annealed in hydrogen ambient at the temperature range from 100 to 300 $^{\circ}C$, respectively. It was found that either the addition of hydrogen to the sputtering gas or the annealing treatment effectively reduced the resistivity of the AZO films. When the AZO films were annealed at the temperature of 300 $^{\circ}C$ for lhr in a hydrogen atmosphere, the resistivity decreased from $2.60{\times}10^{-3}\;{\Omega}cm$ to $8.42{\times}l0^{-4}\;{\Omega}cm$ for the film deposited in pure Ar gas ambient. Under the same annealing conditions of temperature and hydrogen ambient, the resistivity of AZO films deposited in the $Ar+H_2$ gas mixture decreased from $8.22{\times}l0^{-4}\;{\Omega}cm$ to $4.25{\times}l0^{-4}\;{\Omega}cm$. The lowest resistivity of $4.25{\times}l0^{-4}\;{\Omega}cm$ was obtained by adding hydrogen gas to the deposition and annealing process. X-ray diffraction (XRD) pattern of all films showed preferable growth orientation of (002) plane. The average transmittance is above 85 % and in the range of 400-1000 nm for all films.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2009년도 하계학술대회 논문집
• /
• pp.321-322
• /
• 2009

Al doped ZnO films deposited on glass substrate using RF magnetron sputtering in Ar and $Ar+H_2$ gas ambient at $100^{\circ}C$. The films deposited in $Ar+H_2$ were hydrogen-annealed at the temperature of $150\sim300^{\circ}C$ for 1hr. The lowest resistivity of $4.25\times10^{-4}{\Omega}cm$ was obtained for the AZO film deposited in $Ar+H_2$ after hydrogen annealing at $300^{\circ}C$ for 1hr. The average transmittance is above 85% in the range of 400-1000 nm for all films. The absorption efficiency of solar cell was improved by using the optimized AZO films as a top electrode.

• 전기학회논문지
• /
• 제58권9호
• /
• pp.1784-1789
• /
• 2009

This paper describes the measurement technology of the dissolved hydrogen gas due to partial discharge in oil using gas sensor. For higher resolution and less error in measurement of the dissolved hydrogen gas in oil, the sensor outputs with ambient temperature which affect the sensor output characteristics should be considered. The sensor output trends with ambient temperature and the properties of the dissolved hydrogen gas in oil with partial discharge characteristic were analyzed through the test results. It was indicated that the sensor peak and the base voltage with measuring time were affected by ambient temperature and the measurement errors of the sensor output by temperature were reduced by using the difference between the peak and the base voltage rather than just the peak voltage. In addition, the hydrogen gas sensor outputs were increased with the increase of partial discharge energy.

• 한국대기환경학회지
• /
• 제19권6호
• /
• pp.679-687
• /
• 2003

In this study, we investigated the analytical techniques to quantify the ambient concentration of hydrogen sulfide (H$_2$S) in air at ppt concentration level. For this purpose, an on-line GC analytical system equipped with both pulsed-flame photometric detector (PFPD) and thermal desorption unit (TDU) was investigated by collecting ambient air samples. The results of our study generally indicated that calibration conditions of GC system is highly sensitive to affect the accuracy of the analytical technique. Most importantly. we found that the use of different matrices in the the preparation stage of working standards was sensitive to control the overall performance of this technique. The calibration of our analytical system was tested by the two types of working standard (prepared by mixing either with high purity $N_2$ or with the ambient air). According to this test, the latter represented more efficiently the detecting conditions of actual air samples. The peak occurrence patterns of both air samples and standards (prepared by mixing with ambient air) were altered in a similar manner as the function of the loaded volume; however, it was not the case for the $N_2$-mixed standards. Results of our study suggest that detection of H$_2$S is highly different from other sulfides and that its quantification requires minimiaing interfering effects of non -pure substance (like water vapor) and (either sorptive or destructive) loss effects.

• 한국대기환경학회지
• /
• 제23권6호
• /
• pp.666-674
• /
• 2007

In this study, sampling and analysis was carried out for 13 compounds, in order to investigate the odorous compound emissions from landfill stacks and surrounding ambient air. These results revealed that concentration of hydrogen sulfide was $0.13{\sim}0.66\;ppb$ in the ambient air. Also, concentrations of hydrogen sulfide ($151{\sim}358\;ppm$) were the highest value in odorous sulfur compounds from landfill stacks. In case of VOC, toluene was obtained the highest out of volatile organic compounds. It was found that the concentrations of hydrogen sulfide near the landfill was higher than that inside city such as Seoul although it was located in a rural area. The result was due to the effect of hydrogen sulfide emitted from landfill stacks.

• 한국수소및신에너지학회논문집
• /
• 제27권6호
• /
• pp.727-736
• /
• 2016

Numerical simulations of n-heptane spray characteristics in a constant volume combustion chamber under diesel engine like conditions with increasing ambient gas density ($14.8-142kg/m^3$) and ambient temperature (800-1000 K) respectively were performed to understand the non-vaporizing and vaporizing spray behavior. The effect of fuel temperature (ranging 273-313 K) on spray characteristics was also simulated. In this simulation, spray modeling was implemented into ANSYS FORTE where the initial spray conditions at the nozzle exit and droplet breakups were determined through nozzle flow model and Kelvin-Helmholtz/Rayleigh-Taylor (KH-RT) model. Simulation results were compared with experimentally obtained spray tip penetration result to examine the accuracy. In case of non-vaporizing condition, simulation results show that with an increment of the magnitude of ambient gas density and pressure, the vapor penetration length, liquid penetration length and droplet mass decreases. On the other hand vapor penetration, liquid penetration and droplet mass increases with the increase of ambient temperature at the vaporizing condition. In case of lower injection pressure, vapor tip penetration and droplet mass are increased with a reduction in fuel temperature under the low ambient temperature and pressure.

• International Journal of Aeronautical and Space Sciences
• /
• 제15권2호
• /
• pp.199-204
• /
• 2014

An experimental investigation on the rheological behavior of gelled hydrogen peroxide at different ambient temperature (283.15, 293.15 and 303.15 K) was carried out in this study. The gel propellant was rheologically characterized using a rheometer, in the shear rate ranges of 1 to $20s^{-1}$, and 1 to $1000s^{-1}$. Hydrogen peroxide gel was found to be thixotropic in nature. The apparent viscosity value with some yield stress (in-case of shear rate 1 to $20s^{-1}$) drastically fell with the shear rate. In the case of the shear rate range of 1 to $20s^{-1}$, the apparent viscosity and yield stress of gel were significantly reduced at higher ambient temperatures. In the case of the shear rate range of 1 to $1000s^{-1}$, no significant effect of varying the ambient temperature on the gel apparent viscosity was observed. The up and down shear rate curves for hydrogen peroxide gel formed a hysteresis loop that showed no significant change with variation in temperature for both the 1 to $20s^{-1}$ and the 1 to $1000s^{-1}$ shear rate ranges. No significant change in the thixotropic index of gel was observed for different ambient temperatures, for both low and high shear rates. The gel in the 1 to $20s^{-1}$ shear rate range did not lead to a complete breakdown of gel structure, in comparison to that in the 1 to $1000s^{-1}$ shear rate range.

• 한국전기전자재료학회논문지
• /
• 제22권4호
• /
• pp.318-322
• /
• 2009

In this paper, to establish growth technology of ZnO:Al thin films at low temperature applied to photoelectronic devices, ZnO:Al were prepared by RF magnetron sputtering on glass substrate at room temperature using different RF power with subsequent annealing process at different temperature in $H_2$ ambient. The resistivity of hydrogen-annealed ZnO:Al thin film at temperature of $300^{\circ}C$ was reduced to $8.32{\times}10^{-4}{\Omega}cm$ from $9.44{\times}10^{-4}{\Omega}cm$ which was optimal value for as-grown films. X-ray photoelectron spectroscopy(XPS) revealed that improved electrical properties are ascribed to desorption of the negatively charged oxygen species from the grain boundary surfaces by the hydrogen annealing process.