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http://dx.doi.org/10.4313/JKEM.2009.22.4.318

Analysis of Electrical Property of Room Temperature-grown ZnO:Al Thin films Annealed in Hydrogen Ambient  

Jeong, Yun-Hwan (원광대학교 전기전자및정보공학부, WRISS)
Chen, Hao (원광대학교 전기전자및정보공학부, WRISS)
Jin, Hu-Jie (원광대학교 전기전자및정보공학부, WRISS)
Park, Choon-Bae (원광대학교 전기전자및정보공학부, WRISS)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.22, no.4, 2009 , pp. 318-322 More about this Journal
Abstract
In this paper, to establish growth technology of ZnO:Al thin films at low temperature applied to photoelectronic devices, ZnO:Al were prepared by RF magnetron sputtering on glass substrate at room temperature using different RF power with subsequent annealing process at different temperature in $H_2$ ambient. The resistivity of hydrogen-annealed ZnO:Al thin film at temperature of $300^{\circ}C$ was reduced to $8.32{\times}10^{-4}{\Omega}cm$ from $9.44{\times}10^{-4}{\Omega}cm$ which was optimal value for as-grown films. X-ray photoelectron spectroscopy(XPS) revealed that improved electrical properties are ascribed to desorption of the negatively charged oxygen species from the grain boundary surfaces by the hydrogen annealing process.
Keywords
ZnO:Al; TCO; RF magnetron sputtering; Hydrogen annealing process;
Citations & Related Records
Times Cited By KSCI : 3  (Citation Analysis)
연도 인용수 순위
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