• Journal of Hydrogen and New Energy
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• v.22 no.4
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• pp.424-431
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• 2011

The Sulfur-Iodine(SI) thermochemical hydrogen production process consists of three sections, which are so called the Bunsen reaction section, the $H_2SO_4$ decomposition section and the HI decomposition section. In order to identify the phase separation characteristics in the reaction conditions with the high solubility of $SO_2$, we conducted the Bunsen reaction at the low temperatures, ranging from 283 to 298K, with the $I_2/H_2O$ molar ratios of 2.5/16.0 and 3.5/16.0. The molar ratios of HI/$H_2SO_4$ products obtained from low temperature Bunsen reactions were ca. 2, indicating that there were no side reactions. The amount of reacted $SO_2$ was increased with decreasing the temperature, while the amounts of unreacted $I_2$ and $H_2O$ were decreased. In the phase separation of the products, the amount of a $H_2SO_4$ impurity in $HI_x$ phase was increased with decreasing the temperature, though the temperature has little affected on HI and $I_2$ impurities in $H_2SO_4$ phase.

• Journal of Hydrogen and New Energy
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• v.15 no.3
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• pp.220-227
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• 2004

The purpose of this paper is, based on the theoretical background of the principle of gas purification and absorption, and the absorbing ability of metals, to syudy the efficiency of gas purification of inorganic gases using Zr alloys, so as to contribute to the IT industry. To produce and distribute gas with high purity and ultra-high purity, different types of gas purifier are currently being used: distillation type, getter type, catalyst type, absorption at low-temperature type, and membrane separation equipment. From the different purification methods mentioned above, the getter type gas purifier is capable of not only high performance and capacity but also P.O.U(Point Of Use) method. The key of the getter type gas purifier is its efficiency of gas purification, which is the subject chosen for this study.

• Journal of Powder Materials
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• v.9 no.4
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• pp.235-244
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• 2002

The effects of residual impurities on solid state sintering of the powder injection molded (PIMed) W-15wt%Cu nanocomposite powder were investigated. The W-Cu nanocomposite powder was produced by the mech-ano-chemical process consisting of high energy ball-milling and hydrogen reduction of W blue powder-cuO mixture. Solid state sintering of the powder compacts was conducted at $1050^{\circ}C$ for 2~10 h in hydrogen atmosphere. The den-sification of PIM specimen was slightly larger than that of PM(conventional PM specimen), being due to fast coalescence of aggregate in the PIM. The only difference between PIM and PM specimens was the amount of residual impurities. The carbon as a strong reduction agent effectively reduced residual W oxide in the PIM specimen. The $H_2O$ formed by $H_2$ reduction of oxide disintegrated W-Cu aggregates during removal process, on the contrary to this, micropore volume rapidly decreased due to coalescence of the disintegrated W-Cu aggregates during evolution of CO.It can be concluded that the higher densification was due to the earlier occurred Cu phase spreading that was induced by effective removal of residual oxides by carbon.

• Analytical Science and Technology
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• v.35 no.5
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• pp.205-211
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• 2022

Deuterium (D) is an isotope with one more neutron number than hydrogen (H). Heavy elements rarely change their chemical properties with little effect even if the number of neutrons increases, but low-mass elements change their vibration energy, diffusion rate, and reaction rate because the effect cannot be ignored, which is called an isotope effect. Recently, in the semiconductor and display industries, there is a trend to replace hydrogen gas (H₂) with deuterium gas (D₂) in order to improve process stability and product quality by using the isotope effect. In addition, as the demand for D₂ in industries increases, domestic gas producers are making efforts to produce and supply D₂ on their own. In the case of high purity D₂, most of them are produced by electrolysis of heavy water (D₂O), and among D₂, hydrogen deuteride (HD) molecules are present as isotope impurities. Therefore, in order to maximize the isotope effect of hydrogen in the electronic industry, HD, which is an isotope impurity of D₂ used in the process, should be small amount. To this end, purity analysis of D₂ for industrial processing is essential. In this study, HD quantitative analysis of D₂ for high purity D₂ purity analysis was established and hydrogen isotope RM (Reference material) was developed. Since hydrogen isotopes are difficult to analyze with general gas analysis instrument, they were analyzed using a high-precision mass spectrometer (Gas/MS, Finnigan MAT271). High purity HD gas was injected into Gas/MS, sensitivity was determined by a signal according to pressure, and HD concentrations in two bottles of D₂ were quantified using the corresponding sensitivity. The amount fraction of HD in each D₂ was (4518 ± 275) μmol/mol, (2282 ± 144) μmol/mol. D₂, which quantifies HD amount using the developed quantitative analysis method, will be manufactured with hydrogen isotope RM and distributed for quality management and maintenance of electronic industries and gas producers in the future.

• Transactions on Electrical and Electronic Materials
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• v.9 no.6
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• pp.231-236
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• 2008

B, P, and Cs ions were implanted with various parameters into silicon nitride layers prepared by LPCVD. In order to get the maximum impurity concentration at the silicon nitride surface, a high temperature oxide (HTO) buffer layers was deposited prior to the implantation. Alkali ion and pH sensing properties of the layers were investigated with an electrolyte-insulator-silicon (EIS) structure using high frequency capacitance-voltage (HF-CV) measurements. The ion sensing properties of implanted silicon nitrides were compared to those of as-deposited silicon nitride. Band Cs co-implanted silicon nitrides showed a pronounced difference in pH and alkali ion sensing properties compared to those of as-deposited silicon nitride. B or P implanted silicon nitrides in contrast showed similar ion sensitivities like those of as-deposited silicon nitride.

• Journal of Surface Science and Engineering
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• v.27 no.4
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• pp.234-240
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• 1994

A large area impurity doping method for poly-Si TFT LCD has been developed. The advantage of this method is the doping of impurities into Si over a large area without mass separation and beam scanning. Phosphorus diluted in hydrogen was discharged by RF(13.56MHz) power and ions from discharged gas were accelerated by DC acceleration voltage and were implanted into deposited Si films. The annealing characteristic of this method was similar to that of the ion implantation method in the low doping concentration. Three mechanisms were evolved in the annealing characteristics of phosphorus doped Si films. Point defects annihilation and the retrogradation of dopant atoms at grain boundaries as a result of grain growth played a major role at low and high annealing temperature, respectively. However, due to the dopant segregation, the reverse annealing range existed at intermediate annealing temperature.

• Bulletin of the Korean Chemical Society
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• v.16 no.2
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• pp.149-153
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• 1995

We have grown GaAs epilayers by chemical beam epitaxy(CBE) using unprecracked hydrides and metal organic compounds via a surface decomposition process. This result shows that unprecracked arsine (AsH3) or monoethylarsine (MEAs) can be used in chemical beam epitaxy(CBE) as a replacement of a precracked AsH3 source in CBE. It was also found that the uptake of carbon impurity in epilayers grown using trimethylgallium(TMG) with unprecracked AsH3 or MEAs was significantly reduced compared to that in epilayers grown by CBE process employing TMG and arsenics produced from precracked hydrides. We propose a surface structural model suggesting that the hydrogen atoms play an important role in the reduction of carbon content in GaAs epilayer. Intermediates like dihydrides from hydride sources were also considered to hinder carbon atoms from being incorporated into the epilayers or to remove other carbon containing species on the surface.

• Journal of the Microelectronics and Packaging Society
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• v.11 no.2 s.31
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• pp.29-35
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• 2004

Hafnium-oxide gate dielectric films deposited by a metal organic chemical vapor deposition technique on a $N_2-plasma$ treated SiNx and a hydrogen-terminated Si substrate have been investigated. In the case of $HfO_2$ film deposited on a hydrogen-terminated Si substrate, suppressed crystallization with effective carbon impurity reduction was obtained at $450^{\circ}C$. X-ray photoelectron spectroscopy indicated that the interface layer was Hf-silicate rather than phase separated Hf-silicide and silicon oxide structure. Capacitance-voltage measurements show equivalent oxide thickness of about 2.6nm for a 5.0 nm $HfO_2/Si$ single layer capacitor and of about 2.7 nm for a 5.7 nm $HfO_2/SiNx/Si$ stack capacitor. TEM shows that the interface of the stack capacitor is stable up to $900^{\circ}C$ for 30 sec.

• Journal of the Korean Applied Science and Technology
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• v.30 no.1
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• pp.146-151
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• 2013

This paper reveals the performance decrease and recovery of PEMFC when the contaminated fuel gas and air source with sulfur impurities such as hydrogen sulfide and sulfur dioxide were simultaneously introduced to anode and cathode, respectively. Three different GDLs were fabricated with different carbon black and activated carbon to prevent an introduction of sulfur compound impurities into MEA. components. The severity of $SO_2$ and $H_2S$ poisoning was depended on concentrations(3 ppm - 10 ppm) of sulfur impurities. Especially, cell performance degradation rate was rapid when MEA fabricated with CN-2 GDL because it had little porosity on GDL surface. Moreover, the cell performance can be recovered up to 90%-95% only with neat hydrogen and fresh air feeding.. Conclusively, MEA fabricated with porous CN-1 GDL showed the best cell performance and recovery efficiency during exposure to poisoning condition by simultaneous sulfur impurities.

• Journal of the Korean Vacuum Society
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• v.13 no.2
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• pp.79-85
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• 2004

Secondary ion mass spectrometry(SIMS) and glow discharge mass spectrometry(GDMS) were used to determine the impurity concentrations of hydrogen, carbon, and oxygen elements in the Cu and Ta films, and the results of SIMS and GDMS analysis were carefully considered. The Cu and Ta films were deposited on Si (100) substrates at zero substrate bias voltage and a substrate bias voltage of -50 V(Cu films) or -125 V(Ta films) using a non-mass separated ion beam deposition method. As a result of SIMS with Cs+ ion beam, in the case of the Cu and Ta films deposited without the substrate bias voltage, many strong peaks were observed, which is considered to be detected as a the cluster state such as CxHx, OxHx, CxOxHx. All the peaks of SIMS results could be interpreted by the combination of these dominant impurities. Moreover, it was confirmed that the quantitative results of GDMS analysis were accordant to the SIMS results.