• Proceedings of the Materials Research Society of Korea Conference
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• 2002.11a
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• pp.54-54
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• 2002

• Korean Chemical Engineering Research
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• v.53 no.6
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• pp.762-769
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• 2015

The titania ($TiO_2$) nanoparticles with a diameter 2?3 nm were synthesized by controlling hydrolysis of titanium tetraisopropoxide (TTIP) in acid solution. Organic-inorganic hybrid coating solutions were prepared by reacting the titania nanoparticles with 3-glycidoxypropyl trimethoxysilane (GPTMS) by the sol-gel method. The hard coating films with high refractive index were obtained by curing thermally at $120^{\circ}C$ after spin-coating the coating solutions on the polycarbonate (PC) sheets. The coating films showed high optical transparency of 90% in the visible range and exhibited a pencil hardness of 2H. Also, the refractive index at 633 nm wavelength of coating films enhanced from 1.502 to 1.584 as the weight content of titania nanoparticles in the coating solutions increased from 4% to 25%.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.37-37
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• 2010

Silicate-silsesquioxane or siloxane-silsesquioxane hybrid thin films are strong candidates as matrix materials for ultra low dielectric constant (low-k) thin films. We synthesized the silicate-silsesquioxane hybrid resins from tetraethoxyorthosilicate (TEOS) and methyltrimethoxysilane (MTMS) through hydrolysis and condensation polymerization by changing their molar ratios ([TEOS]:[MTMS] = 7:3, 5:5, and 3:7), spin-coating on Si(100) wafers. In the case of [TEOS]:[MTMS] 7:3, the dielectric permittivity value of the resultant thin film was measured at 4.30, exceeding that of the thermal oxide (3.9). This high value was thought to be due to Si-OH groups inside the film and more extensive studies were performed in terms of electronic, ionic, and orientational polarizations using Debye equation. The relationship between the mechanical properties and the synthetic conditions of the silicate-silsesquioxane precursors was also investigated. The synthetic conditions of the low-k films have to be chosen to meet both the low orientational polarization and high mechanical properties requirements. In addition, we have investigated a new solution-based approach to the synthesis of semiconducting chalcogenide films for use in thin-film transistor (TFT) devices, in an attempt to develop a simple and robust solution process for the synthesis of inorganic semiconductors. Our material design strategy is to use a sol-gel reaction to carry out the deposition of a spin-coated CdS film, which can then be converted to a xerogel material. These devices were found to exhibit n-channel TFT characteristics with an excellent field-effect mobility (a saturation mobility of ${\sim}\;48\;cm^2V^{-1}s^{-1}$) and low voltage operation (< 5 V). These results show that these semiconducting thin film materials can be used in low-cost and high-performance printable electronics.

• Journal of the Korean institute of surface engineering
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• v.45 no.6
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• pp.242-247
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• 2012

Yb-doped ITO (ITO:Yb) films were deposited on unheated non-alkali glass substrates by magnetron cosputtering using two cathodes (DC, RF) equipped with the ITO and $Yb_2O_3$ target, respectively. The composition of the ITO:Yb films was controlled by adjusting the RF powers from 0 W to 480 W in 120 W steps with the DC power fixed at 70 W. The ITO:Yb films had a higher crystallization temperature ($200^{\circ}C$) than that of the ITO films ($170^{\circ}C$), which was attributed to both larger ionic radius of $Yb^{3+}$ and higher bond enthalpy of $Yb_2O_3$, compared to ITO. This amorphous ITO:Yb film post-annealed at $170^{\circ}C$ showed a resistivity of $5.52{\times}10^{-4}{\Omega}cm$, indicating that a introduction of Yb increased resistivity of the ITO film. However, these amorphous ITO:Yb films showed a high etching rate, fine pattering property, and a very smooth surface morphology above the crystallization temperature of the amorphous ITO films (about $170^{\circ}C$). The transmittance of all films was >80% in the visible region.

• Journal of the Microelectronics and Packaging Society
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• v.16 no.4
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• pp.17-22
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• 2009

Two different organic-inorganic hybrid thin film transistors (OITFTs) with the structures of glass/ITO/ZnO/PMMA/Al (staggered structure) and glass/ITO/PMMA/ZnO/Al (inverted staggered structure), were fabricated and their electrical and structural properties were compared. The ZnO thin films used as active channel layers were deposited by the atomic layer deposition (ALD) method at a temperature of $100^{\circ}C$. To investigate the effect of the substrates on their properties, the ZnO films were deposited on bare glass, PMMA/glass and ITO/glass substrates and their crystal properties and surface morphologies were analyzed. The structural properties of the ZnO films varied with the substrate conditions. The ZnO film deposited on the ITO/glass substrate showed better crystallinity and morphologies, such as a higher preferred c-axis orientation, lower FWHM value and larger particle size compared with the one deposited on the PMMA/glass substrate. The field effect mobility ($\mu$), threshold voltage ($V_T$) and $I_{on/off}$ switching ratio for the OITFT with the staggered structure were about $0.61\;cm^2/V{\cdot}s$, 5.5 V and $10^2$, whereas those of the OITFT with the inverted staggered structure were found to be $0.31\;cm^2/V{\cdot}s$, 6.8 V and 10, respectively. The improved electrical properties for the staggered OITFTs may originate from the improved crystal properties and larger particle size of the ZnO active layer.

• Applied Chemistry for Engineering
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• v.32 no.5
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• pp.504-508
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• 2021

In this study, the effect of molecular features of guest molecules on the structure, property, and formation of poly(vinyl alcohol) (PVA)/beta-cyclodextrin (bCD) inclusion compound hybrid films was investigated using three types of guest molecules such as hydroquinone (HQ), arbutin (AB), and tranexamic acid (TA). First, the successful formation of inclusion compounds between bCD and the guest molecules, and polymer/inclusion compound hybrid were proved using Raman spectroscopy. The effect of bCD-based inclusion compounds on the structure and property of PVA matrix composites containing inclusion compounds was also studied using X-ray diffraction (XRD) and thermal analyses such as differential scanning calorimetry (DSC) and thermogravimetric analysis (TGA). It was notable that the effect of TA to the crystalline structure of the PVA was significantly different from that of using other guest molecules including HQ and AB. It was also supported by a simple molecular simulation result. This article will be a good example for demonstrating the effect of molecular characteristics on the inclusion compound formation in polymer films, which can provide important information for relevant future research.

• The Transactions of the Korean Institute of Electrical Engineers A
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• v.55 no.6
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• pp.255-258
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• 2006

We investigated the operating characteristics of the hybrid-type superconducting fault current limiter (SFCL) according to the inductance of secondary windings. The hybrid type SFCL consists of a transformer that has a primary winding and a secondary winding with serially connected $YBa_2Cu_3O_7$ (YBCO) films. The resistive-type SFCL has difficulty when it comes to raising the capacity of the SFCL due to slight differences of critical current densities between units and structure of the SFCL. The hybrid-type SFCL with closed-loop is able to achieve capacity increase through the electrical isolation and reduction of the inductance of the secondary winding with a superconducting element of the same critical current. On the other hand, the current limiting characteristics were nearly identical in the hybrid-type SFCL with open-loop compared to closed-loop, but quench time was longer than the hybrid-type SFCL with closed-loop. We confirmed that the capacity of the SFCL was increased effectively by the reduced inductance of the secondary winding. In addition, the power burden of the system also could be lowered by reducing the inductance of secondary winding.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.52 no.1
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• pp.14-19
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• 2003

The effect of the Pt electrode and the $Pt-IrO_2$ hybrid electrode on the performance of ferroelectric device was investigated. The modified Pt thin films with non-columnar structure significantly reduced the oxidation of TiN diffusion barrier layer, which rendered it possible to incorporate the simple stacked structure of Pt/TiN/poly-Si plug. When a $Pt-IrO_2$ hybrid electrode is applied, PZT thin film properties are influenced by the thickness and the partial coverage of the electrode layers. The optimized $Pt-IrO_2$ hybrid electrode significantly enhanced the fatigue properties of the PZT thin film with minimal leakage current.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.429-429
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• 2013

We present a systematic study of the electrical, optical and electromechanical properties of flexible graphene/metal grid hybrid transparent conductive electrodes using 4-point prove method, ultraviolet/visible spectrometer and inner/outer bending test system. The hybrid electrodes were synthesized by depositing a silver grid on a graphene surface. The sheet resistance of hybrid electrodes was as low as 30 Ω/square, while the transmittance was 90%. The electromechanical properties as a function of the change of bending radius were evaluated by measuring the change in resistance. The result will be presented in detail. We believe that these results will provide useful information for the flexible optoelectronic devices based on graphene transparent electrodes.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1501-1504
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• 2006

The WV film successfully enlarged the field of view of the TN mode and made TN popular for larger size applications such as PC monitors. The hybrid alignment of the PDM (polymerized discotic material) layer is also suited for the OCB mode, which is promising as a nextgeneration LCD-TV because of fast panel response and a wide viewing angle. This paper describes recent technological progress in WV films, especially for OCB.