• Journal of Sensor Science and Technology
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• v.23 no.1
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• pp.42-45
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• 2014

Recently, tremendous application utilizing electrospun nanofibers have been actively reported due to its several advantages, such as high surface to volume ratio, simple fabrication and high-throughput manufacturing. In this paper, we developed highly sensitive and consistent nanofiber humidity sensor by electrospinning. The humidity sensor was fabricated by rapid electrospinning (~2 sec) $TiO_2$/PVP/LiCl mixed solution on the micro-interdigitated electrode. In order to evaluate the humidity sensing performances, we measured current response using DC bias voltage under various relative humidity levels. The results show fast response / recovery time and marginal hysteresis as well as long-term stability. In addition, with the aid of micro-interdigitated electrode, we can reduce a total resistance of the sensor and increase the total reaction area of nanofibers across the electrodes resulting in high sensitivity and enhanced current level. Therefore, we expect that the electrospun nanofiber array for humidity sensor can be feasible and promising for diverse humidity sensing application.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.61 no.5
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• pp.763-769
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• 2012

For mist sensing, temperature-humidity sensor is attached on six positions of front glass and rearview mirror in automobile. Bottom-left side of front glass is the best position where mist is sensing. For mist removal, air conditioner is turned on intensity 1, 3 and is set the temperature at 17[$^{\circ}C$], 25[$^{\circ}C$]. And heater is turned on intensity 1, 3 and is set the temperature at 25[$^{\circ}C$], 32[$^{\circ}C$]. The best condition which mist is removed is temperature at 17[$^{\circ}C$] and intensity 3 of air conditioner mode. At this condition, total average value of humidity output voltage difference is 0.561[V]. Also, air conditioner mode is effective than heater mode for mist sensing and removal.

• Electrical & Electronic Materials
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• v.7 no.4
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• pp.325-330
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• 1994

In this paper, $TiO_2$ thin films were fabricated by Sol-Gel method and their electrical conductivity and humidity sensing properties have been investigated. The structure of Sol can be changed by controlling for hydrolysis condition. The uniform surface of thin films was confirmed by SEM. The electrical conductivity of thin films decreased with increasing heat treatment temperature. The humidity sensing properties of thin films were good in high humidity and low frequency regions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.11a
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• pp.59-62
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• 1992

In this study, $TiO_2$ thin films are fabricated by Sol-Gel method and dielectric, electric and humidity sensing properties have been investigated. The structure of Sol can be changed by controlling for hydrolysis reaction condition. The uniformity of the surface on $TiO_2$ thin films is confirmed by SEM. The permittivity of $TiO_2$ thin films increases according to heat treatment temperature, whereas the conductivity of $TiO_2$ thin films decreases according to heat treatment temperature, As the results of measuring humidity sensing properties of $TiO_2$ thin films fabricated as humidity sensor, it is confirmed to have good humidity sensing properties in high humidity and low frequency.

• Journal of Sensor Science and Technology
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• v.24 no.2
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• pp.119-123
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• 2015

This paper presents the inkjet-printed flexible temperature and humidity sensor(F-TH sensor) using PEDOT:PSS. The series, mesh and parallel type sensing element using PEDOT:PSS ink was printed on the overhead projector(OHP) film. The fabricated sensor of each structure has the temperature sensitivity of $140{\Omega}/^{\circ}C$, $29{\Omega}/^{\circ}C$ and $1.4{\Omega}/^{\circ}C$ with linearity, respectively. Also the fabricated sensor was not only possible to measure a temperature, but also to detect humidity. The humidity sensitivity of $400{\Omega}/%RH$, $3.4{\Omega}/%RH$ and $3{\Omega}/%RH$ with linearity, respectively. The fabricated F-TH sensor is expected for the various applications such as electronic devices, bio-healthcare, industrial field.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.4
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• pp.347-357
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• 2024

Oxide semiconductor gas sensors are widely used for detecting toxic, explosive, and flammable gases due to their simple structure, cost-effectiveness, and potential integration into compact devices. However, their reliable gas detection is hindered by a longstanding issue known as humidity dependence, wherein the sensor resistance and gas response change significantly in the presence of moisture. This problem has persisted since the inception of oxide semiconductor gas sensors in the 1960s. This paper explores the root causes of humidity dependence in oxide semiconductor gas sensors and presents strategies to address this challenge. Mitigation strategies include functionalizing the gas-sensing material with noble metal/transition metal oxides and rare-earth/rare-earth oxides, as well as implementing a moisture barrier layer to prevent moisture diffusion into the gas-sensing film. Developing oxide semiconductor gas sensors immune to humidity dependence is expected to yield substantial socioeconomic benefits by enabling medical diagnosis, food quality assessment, environmental monitoring, and sensor network establishment.

• Journal of Sensor Science and Technology
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• v.8 no.6
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• pp.434-439
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• 1999

Differential field effect transistors with double gate metal for integrated humidity sensors have been fabricated and the drain current drift characteristics to relative humidity have been investigated. The aspect ratio was 250/50 for both transistors to get the current difference between the sensing device and non-sensing one. The normalized drain current of the fabricated humidity sensitive field effect transistors increases from 0.12 to 0.3, as relative humidity increases from 30% to 90%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.464-467
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• 2002

$TiO_{2}-Co_{3}O_{4}$ humidity sensors were fabricated by conventional ceramic process and their humid sensing characteristics were investigated. The sample which was added 10wt% $Co_{3}O_{4}$ and heat-treated $1200^{\circ}C$ showed the highest sensitivity to humidity changes and improved a linearity. As $Co_{3}O_{4}$ content was increasing, the sensor consists a uniform pore distribution and grain in the surface. This was analyzed by SEM photographs.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.10
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• pp.475-480
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• 2006

Vanadium oxide thin films (VOx) have been deposited by RF magnetron sputtering from $V_2O_5$ target under different oxygen partial pressure ratios(0%, 10%) and substrate temperatures$(27^{\circ}C,\;400^{\circ}C)$. Crystallographic structure and morphology of the films are studied by XRD and SEM. Humidity-sensing properties of resistive sensors having interdigitated electrode structure are characterized through electrical conduction measurements. The films deposited at room temperature are amorphous whereas the ones deposited above foot are polycrystalline. The sensors show good response to humidity over 20%RH to 80%RH. Vanadium oxide thin films deposited with $0%O_2$ partial pressure at $400^{\circ}C$ exhibit greater sensitivity to humidity change than others.

• Journal of Sensor Science and Technology
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• v.14 no.5
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• pp.343-349
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• 2005

Carbon nitride films were deposited on various substrates for humidity sensors with meshed electrode by reactive RF magnetron sputtering system. As the ratio of injected nitrogen was decreased, the sensitivity of sensor was increased. When the ratio of injected nitrogen was $50{\sim}70%$, the sample showed the best linearity. The sensor impedance changed from $95.4{\;}k{\Omega}$ to $2.1{\;}k{\Omega}$ in a relative humidity range of 5 % to 95 %. The humidity sensors based on silicon wafer revealed higher lineality and faster response than those of alumina or quartz substrates. The adsorption saturation time of the sample was about 80 sec, and its desorption time was about 90 sec.