• Title/Summary/Keyword: Hot Channel

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Degradation Characteristics of Hot-Electron-Induced p-MOSFET's GateOxide Thickness Variations by Stress (스트레스에 의한 핫-전자가 유기된 p-MOSFET의 게이트 산화막 두께 변화의 열화의 특성 분석)

  • Yong Jae Lee
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.31A no.1
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    • pp.77-83
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    • 1994
  • Characteristics of hot-electron-induced degradation by AC, DC was investigated for p-MOSFET's(W/L=25/l$\mu$m) with sub-10nm RTP-CVD gate oxides. It was confirmed that the surface channel p-MOSFET of a thinner gate oxide shows less degradation. Mechanisms for this effect were analyzed using a simple MOS Device degradation model. It was found that the number of generated electron traps(fixed charge) is determined by the amount of peak gate current, dependent of the gate oxide thickness, and the major cause of the smaller degradation in the thinner gate oxide devices is the lower hot electron trapping carriers.

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Fabrication of Ni master for the replication of planar optical devices by LIGA process (LIGA 공정을 이용한 평면형 광소자용 Ni 마스터 제작)

  • Kim, Jin-Tae;Jeong, Myung-Yung
    • Proceedings of the KSME Conference
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    • 2003.04a
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    • pp.945-949
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    • 2003
  • LIGA(Lithographie Galvanoformung Abformung), a fabrication method for the production of microstructrues with a high aspect ratio, is now playing an important role in a fabrication of polymeric optical waveguide device as the replication processes have been developed such as hot embossing and injection molding. The present report deals with the fabrication of Ni master used for the replication of multi-mode polymeric optical waveguide. With the basic technological features in the sequence of the LIGA technique, we fabricated Ni master with 12 channel microstructures of $100\;{\times}\;100{\mu}m\;^2{\times}\;60mm$, and achieved an accuracy of ${\pm}1\;{\mu}m$. Manufactured polymeric optical wavegude with the same using hot embossing process has also the same accuracy and approved its mass production capability.

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Research on the Cooling Characteristics of Hot Stamping Process with Thermal Conductivity Die Steel (금형 열전도율에 따른 핫스탬핑 공정 냉각 특성 연구)

  • Lee, K.;Jung, M.U.;Seok, J.S.;Suh, C.H.
    • Transactions of Materials Processing
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    • v.27 no.3
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    • pp.171-176
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    • 2018
  • In this study, the cooling characteristics of dies were investigated in the hot stamping process of front pillars for automobile. Two identical dies were manufactured out of tool steels with different thermal conductivities. The dies were designed with curved channels for uniform cooling of the blank. Computational fluid dynamics (CFD) simulations were also carried out, which can consider the heat transfer among the coolant, die, and blank. Measured and simulated thermal histories of dies were compared, and it was shown that high conductivity tool steel has an excellent cooling capacity compared to conventional tool steel.

Hot-Carrier Induced Degradation in Submicron MOS Transistor (Submicron MOSTransistor에서 Hot-Carrier에 의한 열화현상의 연구)

  • Choi, Byung-Jin;Kang, Kwang-Nham
    • Proceedings of the KIEE Conference
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    • 1987.07a
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    • pp.469-472
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    • 1987
  • The hot-carrier induced degradation in very short-channel MOSFET was studied systematically. Under the traditional DC stress conditions, the threshold voltage shift (${\Delta}Vt$) and the transconductance degradation (${\Delta}Gm$/(Gmo-${\Delta}Gm$)) were confirmed to depend exponentially on the stress time and the dependency between the two parameters was proved to be linear. And the degradation due to the DC stress across gate and drain was studied. As the AC dynamic process is more realistic in actual device operation, the effects of dynamic stresses were studied.

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Comparative Analysis of Channel Length Dependence of NBTI and CHC Characteristics in PMOSFETs (PMOSFET의 채널 길이에 따른 NBTI 스트레스와 CHC 스트레스의 신뢰성 특성 비교 분석)

  • Yu, Jae-Nam;Kwon, Sung-Kyu;Shin, Jong-Kwan;Oh, Sun-Ho;Lee, Ho-Ryung;Jang, Sung-Yong;Song, Hyung-Sub;Lee, Ga-Won;Lee, Hi-Deok
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.27 no.7
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    • pp.438-442
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    • 2014
  • Channel length dependence of NBTI (negative bias temperature instablilty) and CHC (channel hot carrier) characteristics in PMOSFET is studied. It has been considered that HC lifetime of PMOSFET is larger than NBTI lifetime. However, it is shown that CHC degradation is greater than NBTI degradation for PMOSFET with short channel length. 1/f noise and charge pumping measurement are used for analysis of these degradations.

The Channel Wall Confinement Effect on Periodic Cryogenic Cavitation from the Plano-convex Foil

  • Ito, Yutaka;Nagayama, Tsukasa;Yamauchi, Hiroshi;Nagasaki, Takao
    • Proceedings of the Korean Society of Propulsion Engineers Conference
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    • 2008.03a
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    • pp.383-390
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    • 2008
  • Flow pattern of cavitation around a plano-convex foil, whose shape is similar to the inducer impeller of the turbo-pumps in the liquid fuel rocket engine, was observed by using a cryogenic cavitation tunnel of blowdown type for visualization. Working fluids were liquid nitrogen and hot water. The parameter range to be varied was between 20 and 60mm for channel width, 20 and 60mm for foil chord, -1.8 and 13.2 for cavitation number, 3.7 and 19.5m/sec for averaged inlet velocity, $8.5{\times}10^4$ and $1.5{\times}10^6$ for Reynolds number, -8 and $8^{\circ}$ for angle of attack, respectively. Especially at positive angle of attack, namely, convex surface being downstream, the whole cavity or a part of the cavity on the foil surface departs periodically. Periodic cavitation occurs only in case of smaller cavitation size than twice foil chord. Cavitation thickness and length in 20mm wide channel are larger than those in 60mm due to the wall confinement effect. Therefore, periodic cavitation in 60mm wide channel easily occurs than that in 20mm. These results suggest that the periodic cavitation is controlled by not only the hydrodynamic effect of vortex shedding but also the channel wall confinement effect.

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Push out tests on various shear connectors used for cold-formed steel composite beam

  • Rajendran, Senthilkumar;Perumalsamya, Jayabalan;Mohanraj, Divya
    • Steel and Composite Structures
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    • v.42 no.3
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    • pp.315-323
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    • 2022
  • Shear connectors are key elements that ensure integrity in a composite system. The primary purpose of a shear connector is to bring a high degree of interaction between composite elements. A wide variety of connectors are available for hot-rolled composite construction, connected to the beam through welding. However, with cold-formed members being very thin, welding of shear connectors is not desirable in cold-formed composite constructions. Shear connectors for cold-formed elements are limited in studies as well as in the market. Hence in this study, three different types of shear connectors, namely, single-channel, double channel, and self-tapping screw, were considered, and their performance assessed by the Push-out test as per Eurocode 4. The connection between channel shear connectors and the beam was made using self-tapping screws to avoid welding. The performance of the connectors was analyzed based on their ultimate capacity, characteristic capacity, ductility, and slippage during loading. Strength to weight ratio was also carried out to understand the proposed connectors' suitability for conventional ones. The results showed relatively higher initial stiffness and ductility for double channel connectors than other connectors. Also, self-tapping screws had a higher strength to weight ratio with low ductility.