• International Journal of Precision Engineering and Manufacturing
• /
• 제7권2호
• /
• pp.52-55
• /
• 2006

The OLEDs(Organic Light-Emitting Diodes) structure organizes the bottom layer using glass, ITO(indium thin oxide), hole injection layer, hole transport layer, emitting material layer, electron transport layer, electron injection layer and cathode using metal. OLED has various advantages. OLEDs research has been divided into structural side and emitting material side. The amount of emitting light and luminescence efficiency has been improved by continuing effort for emitting material layer. The emitting light mechanism of OLEDs consists of electrons and holes injected from cathode and anode recombination in emitting material layer. The mobilities of injected electrons and holes are different. The mobility of holes is faster than that of electrons. In order to get high luminescence efficiency by recombine electrons and holes, the balance of their mobility must be set. The more complex thin film structure of OLED becomes, the more understanding about physical phenomenon in each interface is needed. This paper observed what the thickness change of hole transport layer has an affection through the below experiments. Moreover, this paper uses numerical analysis about carrier transport layer thickness change on the basis of these experimental results that agree with simulation results.

• 한국전기전자재료학회논문지
• /
• 제30권2호
• /
• pp.91-95
• /
• 2017

We were designed the hole transport layer of the new composite skeleton structure having a high charge mobility and thermal stability. In this paper, a hole transport layer material based on thiophene molecular structure capable of hole mobility characteristics and high triplet energy was designed and synthesized. The structures and properties of the synthesized compounds were characterized by NMR, fluorescence spectroscopy and energy band gap. As a result of NMR measurement, it was confirmed that when analyzing the integrated type with the position where the measured peak is displayed, it agrees with the structure of hole transport materials. The emission characteristics of the hole transport layer material showed absorption characteristics at 412 nm and 426 nm, respectively, and exhibited emission characteristics in the range of 469 nm and 516 nm.

• Transactions on Electrical and Electronic Materials
• /
• 제8권6호
• /
• pp.250-254
• /
• 2007

Applying the moving photo-carrier grating(MPG) technique and time-of-flight(TOF) measurements, we studied the transport properties of stabilized amorphous selenium typical of the material used in direct conversion X-ray imaging devices. For MPG measurement, we obtained electron and hole mobility and the recombination lifetime of $\alpha-Se$ films with arsenic(As) additions. We found an apparent increase in hole drift mobility and recombination lifetime, especially when 0.3 % As was added into $\alpha-Se$ film, whereas electron mobility decreased with the addition of As due to the defect density. For TOF measurement, a laser beam with pulse duration of 5 ns and wavelength of 350 nm was illuminated on the surface of $\alpha-Se$ with a thickness of 400 ${\mu}m$. The measured hole and electron transit times were about 8.73 ${\mu}s$ and 229.17 ${\mu}s$, respectively.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 하계학술대회 논문집
• /
• pp.927-930
• /
• 2001

We studied the electrical properties of Copper(II)-phthalocyanine (Cu-Pc) as a hole transport layer in organic light emitting devices (OLEDs). OLEDs were constructed with ITO/CU-Pc/triphenyl-diamine (TPD)/tris-(8-hydroxyquinoline) aluminum ( Alq$_3$) + 4- (Dicyanomethylene)-2-methyl-6-(4-dimethylaminostyryl)-4H-pyran (DCM)/Al. It was consisted of a thin DCM in Alq$_3$emission layer. We observed that the change of recombination zone was moved toward the cathode as the hole mobility increased due to the heat-treatment temperature of Cu-Pc layer increased.

• 한국전기전자재료학회논문지
• /
• 제16권2호
• /
• pp.113-119
• /
• 2003

We report the electrical properties of copper(II)-phthalocyanine(Cu-Pc) as a hole injaction layer in organic light-emitting diode (OLED). OLEDs were constructed by the following material structure : indium tin oxaide (ITO)/ CuPc/ triphenyl-diamine (TPD)/ tris-(8-hydroxyquinoline)aluminum (Alq3)/4-(Dicyanomethlene)-2-methyl-6-(4-dimethylaminostyryl)-4H-pyran (DCM)/ Al. we observed that the change of recombination zone by using a DCM detection thin layer (6 ${\AA}$) in a Alq$_3$ emitting layer. layer. Recombination zone was moved toward the cathode as the hole mobility increased due to the heat-treatment temperature of cupc layer increased.

• 한국전기전자재료학회논문지
• /
• 제21권8호
• /
• pp.695-698
• /
• 2008

We investigated the characteristics of Strained-Si-on-Insulator (sSOI) MOSFETs with 0.7% tensile strain. The sSOI MOSFETs have superior subthreshold swing under 70 mV/dec and output current. Especially, the electron and hole were increased in sSOI MOSFET. The electron and hole mobility in sSOI MOSFET were 286$cm^2/Vs$ and 151$cm^2/Vs$, respectively. The carrier mobility enhancement is due to the subband splitting by 0.7% tensile strain.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
• /
• pp.47-48
• /
• 2005

The moving photocarrier grating(MPG) technique for the determination of the carrier mobilities and the recombination lifetime in a-Se:As films have been studied. The electron and hole drift mobility and the recombination lifetime of a-Se films with arsenic (As) additions have been obtained. We have found an increase in hole drift mobility and recombination lifetime, especially when 0.3% As is added into a-Se film. However, the electron mobility exhibits no observable change up to 0.5% As addition in a-Se films.0.3% As added a-Se film also exhibits the maximum short circuit current densities per laser intensity of $5.29\times10^{-7}$ A/W.

• 대한전자공학회:학술대회논문집
• /
• 대한전자공학회 2002년도 하계종합학술대회 논문집(2)
• /
• pp.253-256
• /
• 2002

In Currently, OTFTS are actively studied around the world because they are expected to create new novel applications, which can not be implemented by the conventional Si semiconductor, due to the unique characteristics of organic materials. In this paper, the hole field effect mobility has been improved to the level of a-Si TFTs with 0.3cm2/V.sec, simply applying the surface treatment process on the gate with organic molecules. In addition, the model has been suggested and the temperature dependence of hole mobility analyzed.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
• /
• pp.7-8
• /
• 2007

We investigated the characteristics of UTB-SOI pMOSFETs with SOI thickness ($T_{SOI}$) ranging from 10 nm to 1 nm and evaluated the dependence of electrical characteristics on the silicon surface orientation. As a result, it is found that the subthreshold characteristics of (100)-surface UTB-SOI pMOSFETs were superior to (110)-surface. However, the hole mobility of (110)-surface were larger than that of (100)-surface. The enhancement of effective hole mobility at the effective field of 0.1 MV/ccm was observed from 3-nm to 5-nm SOI thickness range.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
• /
• pp.252-253
• /
• 2005

The effects of As addition in amorphous selenium (a-Se) films on the carrier mobilities and the recombination lifetime have been studied using the moving photo-carrier grating (MPG) measurements. The electron and hole mobility, and recombination lifetime of a-Se films with arsenic (As) additions up to 1% have been obtained. We have found an increase in hole drift mobility and recombination lifetime, especially when 0.3% As is added into a-Se film, whereas electron mobility decreases with As addition due to the defect density from shallow traps.