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http://dx.doi.org/10.4313/JKEM.2008.21.8.695

High Mobility Characteristics of Strained-Si-on-insulator (sSOI) Metal-oxide-semiconductors Field-effect-transistors (MOSFETs)  

Kim, Kwan-Su (광운대학교 전자재료공학과)
Cho, Won-Ju (광운대학교 전자재료공학과)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.21, no.8, 2008 , pp. 695-698 More about this Journal
Abstract
We investigated the characteristics of Strained-Si-on-Insulator (sSOI) MOSFETs with 0.7% tensile strain. The sSOI MOSFETs have superior subthreshold swing under 70 mV/dec and output current. Especially, the electron and hole were increased in sSOI MOSFET. The electron and hole mobility in sSOI MOSFET were 286$cm^2/Vs$ and 151$cm^2/Vs$, respectively. The carrier mobility enhancement is due to the subband splitting by 0.7% tensile strain.
Keywords
Strained-Si; SOI; Mobility enhancement; Subband splitting;
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1 T. A. Langdo, M. T. Currie, Z.-Y. Cheng, J. G. Fiorenza, M. Erdtmann, G. Braithwaite, C. W. Leitz, C. J. Vineis, J. A. Carlin, A. Lochtefeld, M. T. Bulsara, I. Lauer, D. A. Antoniadis, and M. Somerville, 'Strained Si on insulator technology: from materials to devices', Solid-state Electronics, Vol. 48, p. 1357, 2004   DOI   ScienceOn
2 L. J. Huang, J. O. Chu, S. Goma, C. P. D'Emic, S. J. Koester, D. F. Canaperi, P. M. Mooney, S. A. Cordes, J. L. Speidell, R. M. Anderson, and H.-S. Phillip Wong, 'Carrier Mobility Enhancement in Strained Si-on- insulator Fabricated by Wafer Bonding', IEEE VLSI Symp., p. 57, 2001
3 G. Xia, M. Canonico, and J. L. Hoyt, 'Interdiffusion in strained Si/strained SiGe epitaxial heterostructures', Semicond. Sci. Technol., Vol. 22, p. 55, 2007   DOI   ScienceOn
4 S. Tagaki, T. Mizuno, T. Tezuka, N. Sugiyama, T. Numata, K. Usuda, Y. Moriyama, S. Nakaharai, J. Koga, A. Tanabe, N. Hirashit, and T. Maeda, 'Channel Structure Design, Fabrication and Carrier Transport Properties of Strained-Si/SiGe-on-insulator (Strained-SOI) MOSFETs', IEDM, p. 57, 2003
5 S. Tagaki, T. Mizuno, T. Tezuka, N. Sugiyama, S. Nakaharai, T. Numata, J. Koga, and K. Uchida, 'Sub-band structure engineering for advanced CMOS channels', Solid-State Electronics, Vol. 49, p. 684, 2005   DOI   ScienceOn
6 D. R. Black, J. C. Woicik, M. Erdtmann, and T. A. Langdo, 'Imaging defect in strained-silicon thin films by glancing-incidence', Appl. Phys. Lett., Vol. 88, p. 224102, 2006   DOI   ScienceOn
7 T. Numata, T. Mizuno, T. Tezuka, J. Koga, and S. Takagi, 'Control of threshold-voltage and short-channel effects in ultrathin strained-SOI CMOS devices', IEEE Trans. Electron Devices, Vol. 52, No. 8, p. 1780, 2005   DOI   ScienceOn