• ETRI Journal
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• v.17 no.3
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• pp.17-43
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• 1995

We present a comprehensive derivation of the transport of holes involving an interacting two-valence-band system in terms of a generalized relaxation time approach. We sole a pair of semiclassical Boltzmann equations in a general way first, and then employ the conventional relaxation time concept to simplify the results. For polar optical phonon scattering, we develop a simple method th compensate for the inherent deficiencies in the relaxation time concept and apply it to calculate effective relaxation times separately for each band. Also, formulas for scattering rates and momentum relaxation times for the two-band model are presented for all the major scattering mechanisms for p-type GaAs for simple, practical mobility calculations. Finally, in the newly proposed theoretical frame-work, first-principles calculations for the Hall mobility and Hall factor of p-type GaAs at room temperature are carried out with no adjustable parameters in order to obtain a direct comparison between the theory and recent available experimental results, which would stimulate further analysis toward better understanding of the complex transport properties of the valence band. The calculated Hall mobilities show a general agreement with our experimental data for carbon doped p-GaAs samples in a range of degenerate hole densities. The calculated Hall factors show $r_H$=1.25~1.75 over all hole densities($2{\times}10^{17}{\sim}1{\times}10^{20}cm^{-3}$ considered in the calculations.

• Clinics in Shoulder and Elbow
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• v.2 no.1
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• pp.8-13
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• 1999

The results of the operative treatment of the Grade III acromioclavicular joint injury is defined by the durability of the reduced joint and free of exertional pain. Several surgical techniques have been applied to reduce and stabilize the joints effectively. Resection of clavicular lateral end and subacromial decompression also could be applied to prevent post-operative arthritic change. Biomechanical studies reveals the role of clavicular elevation and rotation to achieve more than 90 degrees of elevation. It also serves as a attachment site of deltoid and trapezius muscle. The stability and mobility of the both acromioclavicular and coracoclavicular joint are important to get full functional recovery. We modified the methods of coracoacromial ligament transfer described by Weaver-Dunn and by Shoji et a!. to pre­vent pullout of the transferred ligament and to get more improved functional results. Main technical point was harvesting full thickness bone block and fix it through the key-hole to reduce pull out angle.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.50 no.3
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• pp.165-172
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• 2022

Pintle injector is the most suitable injector for thrust control because it can control the area of propellant injection. Accordingly, the combustion test of multiple hole pintle injector and continuous type pintle injector was carried out in this paper using liquid oxygen and gas methane. The combustion performance of the two pintles was verified with the characteristic speed efficiency, and the experimental results were compared according to the O/F and combustion chamber pressure and under similar conditions. The efficiency of the multi hole pintle was generally somewhat higher than continuous pintle when pintle opening distance(the area of dispensing oxidizer) was in a 100% thrust condition.

• Archives of Craniofacial Surgery
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• v.12 no.1
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• pp.12-16
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• 2011

Purpose: This study examined the biomechanical stability of four different plating techniques in the experimental model of mandibular subcondyle fracture. Methods: Twenty standardized bovine tibia bone samples ($7{\times}1.5{\times}1.0cm$) were used for this study. Each of the four sets of tibia bone was cut to mimic a perpendicular subcondyle fracture in the center area. The osteotomized tibia bone was fixed using one of four different fixation groups (A,B,C,D). The fixation systems included single 2.0 mm 4 hole mini adaption plate (A), single 2.0 mm 4 hole dynamic compression miniplate (B), double fixation with 2.0 mm 4 hole mini adaption plate (C), double fixation with a 2.0 mm 4 hole mini adaption plate and 2.0 mm 4 hole dynamic compression miniplate (D). A bending force was applied to the experimental model using a pressure machine (858 table top system, $MTS^{(R)}$) until failure occurred. The load for permanent deformation, maximum load of failure were measured in the load displacement curve with the chart recorder. Results: Double fixation with a 2.0 mm 4 hole mini adaption plate and a 2.0 mm 4 hole dynamic compression miniplate (D) applied to the anterior and posterior regions of the subcondyle experimental model showed the highest load to failure. Conclusion: From this study, double fixation with an adaption plate and dynamic compression miniplate fixation technique produced the greatest biomechanical stability. This technique may be considered a useful means of fixation to reduce the postoperative internal maxillary fixation period and achieve early mobility of the jaw.

• ETRI Journal
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• v.41 no.6
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• pp.829-837
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• 2019

The p-type nanowire field-effect transistor (FET) with a SiGe shell channel on a Si core is optimally designed and characterized using in-depth technology computer-aided design (TCAD) with quantum models for sub-10-nm advanced logic technology. SiGe is adopted as the material for the ultrathin shell channel owing to its two primary merits of high hole mobility and strong Si compatibility. The SiGe shell can effectively confine the hole because of the large valence-band offset (VBO) between the Si core and the SiGe channel arranged in the radial direction. The proposed device is optimized in terms of the Ge shell channel thickness, Ge fraction in the SiGe channel, and the channel length (L_g) by examining a set of primary DC and AC parameters. The cutoff frequency (f_T) and maximum oscillation frequency (f_max) of the proposed device were determined to be 440.0 and 753.9 GHz when L_g is 5 nm, respectively, with an intrinsic delay time (τ) of 3.14 ps. The proposed SiGe-shell channel p-type nanowire FET has demonstrated a strong potential for low-power and high-speed applications in 10-nm-and-beyond complementary metal-oxide-semiconductor (CMOS) technology.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.286-289
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• 2001

Single phase CuGaS$_2$ thin film with the highest diffraction peak of (112) at diffraction angle (2$\theta$) of 28.8$^{\circ}$ was made at substrate temperature of 7$0^{\circ}C$, annealing temperature of 35$0^{\circ}C$ and annealing time of 60 min. And second highest (204) peak was shown at diffraction angle (2$\theta$) of 49.1$^{\circ}$. Lattice constant of a and c of that CuGaS$_2$ thin film was 5.37 $\AA$ and 10.54 $\AA$ respectively. The greatest grain size of the thin film was about 1${\mu}{\textrm}{m}$. The (112) peak of single phase of CuGaS$_2$ thin film at annealing temperature of 35$0^{\circ}C$ with excess S supply was appeared with a little higher about 10 % than that of no exces S supply And the resistivity, mobility and hole density at room temperature of p-type CuGaS$_2$ thin film with best crystalline was 1.4 $\Omega$cm, 15 cm2/V . sec and 2.9$\times$10$^{17}$ cm$^{-3}$ respectively. It was known that carrier concentration had considerable effect than mobility on variety of resistivity of the fabricated CuGaS$_2$ thin film, and the polycrystalline CuGaS$_2$ thin films were made at these conditions were all p-type.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.501-504
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• 2001

We used time-of-flight method to analyze transport properties of charge carrier which is produced by X-ray exposure. It is the research of charge transport and specific property of trap that is performed in direct digital x-ray image receptor. But the results shows us different measurement value of electron and charge drift mobility and it is difficult to precise analysis about charge transport properties and trap mechanism. We measured transit time and drift mobility of charge carriers using time-of-flight method to evaluate the correlation of a-Se thickness change and electric field. We made a testing glass with a-Se of 400 ${\mu}m$ thickness on coming glass using thermoevaporation method and built Au electrode with 300nm, $2{\varphi}$ on both sides of a-Se, As a result of this experiment, electron and hole transit time was each $229.17{\mu}s$ and $8.73{\mu}s$ at $10V/{\mu}m$ electric field and Drift mobility was each $0.00174 cm^{2}/V{\cdot}s$, $0.04584cm^{2}/V{\cdot}s$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.501-504
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• 2001

We used time-of-flight method to analyse transport properties of charge carrier which is produced by X-ray exposure. It is the research of charge transport and specific property of trap that is performed in direct digital x-ray image receptor. But the results shows us different measurement value of electron and charge drift mobility and it is difficult to precise analysis about charge transport properties and trap mechanism. We measured transit time and drift mobility of charge carriers using time-of-fight method to evaluate the correlation of a-Se thickness change and electric field. We made a testing glass with a-Se of 470 ${\mu}{\textrm}{m}$ thickness on corning glass using thermoevaporation method and built Au electrode with 300nm, 2$\phi$ on both sides of a-Se. As a result of this experiment, electron and hole transit time was each 229.17 $\mu$s and 8.737 $\mu$s at 10V/${\mu}{\textrm}{m}$ electric field and Drift mobility was each 0.00174 $\textrm{cm}^2$/V.s, 0.04584 $\textrm{cm}^2$/V.s.

• The Academic Congress of Korean Shoulder and Elbow Society
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• 2009.03a
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• pp.174-174
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• 2009

The acromioclavicular-hook-plate is one of the surgical treatments for distal clavicle fracture and traumatic acromioclavicular (AC) joint dislocation. Although this procedure can obtain rigid and accurate anatomical reduction of the AC joint, secondary widening of the hook-hole in the acromion is often seen during postoperative follow-up. This complication is owing to the high-degree of mobility of the AC joint. Therefore, it is important to evaluate the effect on these complications due to the position of the hook-hole. The purpose of the present study is to investigate three-dimensionally the effect due to the position of the hook-hole during arm abduction motion. We studied in vivo and three-dimensional kinematics of the normal shoulder joint with use of a markerless bone-registration technique. Magnetic resonance images of 14 shoulders of 7 healthy volunteers were acquired in 7 positions between $0^{\circ}$ and $180^{\circ}$ of abduction. We created three-dimensional computer models of the bones and the acromioclavicular-hook-plate. Based on the three-dimensional kinematics data, we simulated the widening of the hook-hole each different positioning of the hook-hole. The widths of the hook-holes almost linearly increased. And these widths significantly increased, when we put the hook-hole on the acromion from AC joint to 20 mm and 25 mm posterior position.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.152-152
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• 2011

Silicon 기반의 환경에서 연구 및 제조되는 전자소자는 반도체의 기술이 발전함에 따라 chip 선폭의 크기가 30 nm에서 20 nm, 그리고 그 이하의 크기로 점점 더 작아지는 요구에 직면하고 있다. 탄소나노 구조와 나노와이어 기술이 Silicon을 대신할 다음세대 기술로 주목받고 있다. 많은 연구결과들 중에서 III-V CMOS가 가장 빠른 접근 방법이라 예상한다. III-V족 물질을 이용하면 electron 보다 수십 배 이상의 이동도를 얻을 수 있으나 p-type의 구조를 구현하는 것이 해결해야 할 문제이다. p-type 3-5 족 화합물을 이용하여 에너지 밴드 갭의 변화를 가능하게 한다면 hole의 이동도를 크게 향상시킬 수 있어 silicon 기반의 p-type 소자보다 2~3배 더 빠른 소자의 구현이 가능하다. 3-5족 화합물 반도체의 성장 기술이 많이 진보되어 이를 이용하여 고속 소자를 구현한다면 시기적으로 더욱 빨리 다가올 것이라 예측한다. 에너지 밴드갭의 변화와 격자 부정합을 고려하여 SI InP 기판에 GaSb 물질을 채널로 사용한 p-type 2-dimensional hole gas (2DHG) 소자를 구현하였다. 관찰된 소자 구조의 박막 상태의 특징을 보이며 10 um ${\times}$ 10 um AFM 측정결과 1 nm 이하의 표면 거칠기를 가지며 상온에서의 hole 이동도는 약 650 cm2/Vs이고 sheet carrier density는 $5{\times}1012$ /cm2의 결과를 확인하였다. 실험결과 InP 기판위에 채널로 사용된 GaSb 박막을 올리는데 있어 가장 중요한 것은 Phosphorus, Arsenic, 그리고 Antimony 물질의 양과 이들의 변화시간의 조절이다. 본 발표에서 Semi-insulating InP 기판위에 electron이 아닌 hole을 반송자로 이용한 차세대 고속 전자소자를 구현하고자 하여 MBE (Molecular Beam Epitaxy)로 p-type 소자를 구현하여 실험하였다. 아울러 더욱 빠른 소자의 구현을 위하여 세계의 유수 그룹들의 연구 결과들과 앞으로 예상되는 고속 소자에 대해서 비교와 함께 많은 기술에 대해 논의하고자 한다.