• Smart Structures and Systems
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• v.24 no.2
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• pp.257-266
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• 2019

The benefit of data fusion in improving the performance of Higher Order Sliding Mode (HOSM) observer is brought out in this paper. This improvement in the performance of HOSM observer, resulted in the improvement of active vibration control of a piezo actuated structure, when controlled by a Discrete Sliding Mode Controller (DSMC). The structure is embedded with two piezo sensors for measuring the first two vibrating modes. The fused output of sensors is applied to the HOSM observer for generating state estimates, these states generated are applied to the DSMC, designed for the fourth order linear time invariant model of the structure. In the simulation study, the structure is excited at the first and second mode resonance. It is found that better vibration suppression is obtained, when the states generated by the fused output of sensors is applied as controller input, than the vibration suppression obtained by applying the states generated by using individual sensor output. The closed loop performance of DSMC obtained with HOSM observer is compared with the closed loop performance obtained with the conventional observer. Results obtained shows that better vibration suppression is obtained when the states generated by HOSM observer is applied as controller input.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.4
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• pp.793-798
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• 2016

In this work, the memory window characteristics of vertical nanowire device with asymmetric source and drain was analyzed using bipolar junction transistor mode for 1T-DRAM application. A gate-all-around (GAA) MOSFET with higher doping concentration in the drain region than in the source region was used. The shape of GAA MOSFET was a tapered vertical structure that the source area is larger than the drain area. From hysteresis curves using bipolar junction mode, the memory windows were 1.08V in the forward mode and 0.16V in the reverse mode, respectively. We observed that the latch-up point was larger in the forward mode than in the reverse mode by 0.34V. To confirm the measurement results, the device simulation has been performed and the simulation results were consistent in the measurement ones. We knew that the device structure with higher doping concentration in the drain region was desirable for the 1T-DRAM using bipolar junction mode.

• Journal of Korean Elementary Science Education
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• v.33 no.4
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• pp.724-735
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• 2014

The purpose of this study was to confirm correlation between elementary school students' VARK Learning styles test and Scientific Communication Skills through VARK questionnaire (version 7.3) for Youngers and Scientific Communication Skills Test. The subjects were 99 in 6th grade students of an elementary school located in Gyeonggi-do, Korea. The results of this study were as follows: 64% of the students had multiple learning styles, but only 36% of the students preferred a single mode of information presentation. Among students had a single mode preference, the aural ("A") was the highest unimodal preference. Among "V(visual)" mode, "A" mode, "R(read/write)" mode, and "K(kinesthetic)" mode, "A" mode was the commonest learning mode which students had. In Scientific Communication Skills Test, students' overall average was 26.19p [scientific explanation type (11.85p), scientific insistence type (14.34p)]. Girls' scores were higher than boys in scientific explanation type, but not in scientific insistence type. The scores by communication forms were Text (5.67p), Number (6.87p), Table (6.15p), and Picture (7.49p). Girls' scores were higher than boys in Text and Picture forms but not in Number and Table forms. In result of correlation analysis (Spearman's rho) between VARK Learning Styles and the types & forms of Scientific Communication Skills, there were common correlation in "Read/write (R) learning style-Scientific insistence type", "Read/write (R) learning style-Grounds of Scientific insistence", "Read/write (R) learning style-Description of Scientific explanation", and "R learning style-Text form".

• Fashion & Textile Research Journal
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• v.2 no.2
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• pp.146-149
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• 2000

This study has been investigated the comparison of the seam strength of hand sewing with machine sewing using two kinds of sewing thread. On machine sewing, thread is used for sale, on hand sewing, thread is used for every fabric weft yarn. Breaking strength, efficiency and breaking mode of seams were examined under various sewing conditions using three kinds of fabric and three kinds of stitch type. The results obtained are as follows: The seam strength is not affected by sewing mechanism, but affected by a breaking mode : The type of slipped mode has a higher seam strength of hand sewing than that of machine sewing. When fabrics and threads were broken by a higher seam strength of machine sewing than that of hand sewing. Fabrics having low density using plain seam slipped more easily, so seam strength was greatly lesser. Fabrics having higher density had higher to seam strength. We should choose appropriate seams based on production, economy and aesthetics.

• Journal of Mechanical Science and Technology
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• v.17 no.2
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• pp.254-268
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• 2003

The explicit formulation of the J-integral and the M-integral is constructed in terms of the stress intensity factor and the higher order stress coefficients for Mode II cracks under small or large scale yielding. Furthermore, the stress intensity factor and the higher order stress coefficients as well are computed with the aid of the two-state J- and the M-integral, which is found to be accurate and efficient. It is found that the contribution from the higher order singularities to the J-integral is closely related to the configuration of the plastic zone.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2000.06a
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• pp.536-542
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• 2000

The present paper introduces a new fixed interface component mode synthesizing technique based on the notion of higher-order field-consistency. The present technique employs higher-order residual constraint modes in addition to lower fixed interface normal modes while consistency in matching field variables at the substructure interface is maintained. The present field-consistency approach does not increase the size of the synthesized system even if higher-order residual constraint modes are included. A new field-consistent higher-order synthesis technique is first presented and a numerical example is given to verify the present method.

• Journal of the Korean Professional Engineers Association
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• v.31 no.1
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• pp.9-16
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• 1998

For the flow facing high1y informationized age, there is a flow from fixed communications connecting fixed places such as offices and homes to mobile communications connecting mobile objets such as automobiles, ships and aircraft. This flow has added to diversifying communications Including data and images. While the axed mode is diversifying information media by digitalization of communications network and computers, the mobile mode has brought higher sophistication of communication modes by a higher degree of electric wave utilization. The following descriptions outlines the mobile communication which is utilizing the electric wave phenomena. In sequence the following items are described: a brief history of mobile communications, the technical object and various kinds of services, propagation of electric wave signal.

• Proceedings of the Computational Structural Engineering Institute Conference
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• 1993.04a
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• pp.95-99
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• 1993

Conventional tuned mass dampers are located on the top floor of tall buildings, which reduce the fundamental mode response of buildings. Higher modes may have a greater contribution toward the acceleration response of tall buildings. To reduce this, additional tuned mass dampers are required and could be substituted as building equipments. This paper shows, with a numerical ezample, how the lecate tuned mass damper in order to reduce the higher mode response effectively

• Journal of the Korean Professional Engineers Association
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• v.31 no.2
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• pp.65-72
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• 1998

For the flow facing highly informationized age, there Is a flow from fixed communications connecting fixed places such as offices and homes to mobile communications connecting mobile objets such as automobiles, ships and aircraft. This flow has added to diversifying communications including data and images. While the fixed mode Is diversifying information media by digitalization of communications network and computers, the mobile mode has brought higher sophistication of communication modes by a higher degree of electric wave utilization. The following descriptions outlines the mobile communication which Is utilizing the electric wave phenomena. In sequence the following items are described: a brief history of mobile communications, the technical object and various kinds of services, propagation of electric wave signal.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.342-343
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• 2012

We studied the Drain-Induced-Barrier-Lowering (DIBL) effect by different drain engineering. One other drain engineering is symmetric source-drain n-channel MOSFETs (SSD NMOSs), the other drain engineering is asymmetric source-drain n-channel MOSFETs (ASD NMOSs). Devices were fabricated using state of art 40 nm dynamic-random-access-memory (DRAM) technology. These devices have different modes which are deep drain junction mode in SSD NMOSs and shallow drain junction mode in ASD NMOSs. The shallow drain junction mode means that drain is only Lightly-Doped-Drain (LDD). The deep drain junction mode means that drain have same process with source. The threshold voltage gap between low drain voltage ($V_D$=0.05V) and high drain voltage ($V_D$=3V) is 0.088V in shallow drain junction mode and 0.615V in deep drain junction mode at $0.16{\mu}m$ of gate length. The DIBL coefficients are 26.5 mV/V in shallow drain junction mode and 205.7 mV/V in deep drain junction mode. These experimental results present that DIBL effect is higher in deep drain junction mode than shallow drain junction mode. These results are caused that ASD NMOSs have low drain doping level and low lateral electric field.