• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 추계학술대회 논문집
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• pp.82-85
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• 1996

It is considered that the effect of radiation aging, such as electron beam due to the ultra-high voltage for transmission, on the physical properties and electrical characteristics of electrital insulating materials. Low-density polyethylene(thickness 100[${\mu}{\textrm}{m}$]) is selected as an experimental specimen. Fourier transform infra-red spectrum, X-ray diffraction, differential scanning calorimetry and scanning electron microscopy is used so as to analysis the physical properties, the morphological changes and the crystallinity of LDPE. And it is made an experiments of dielectric characteristics in the temperature range of 20[$^{\circ}C$]~120[$^{\circ}C$], in the frequency range of 30[Hz]~1.5$\times$10$^{5}$ [Hz] and in the applied voltage range of 300[mV]~1500[mV].

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.240-243
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• 2002

Carbon nitride films have been deposited on Si(100) substrate by a high voltage discharge plasma combined with laser ablation in a nitrogen atmosphere. The films were grown both with and without the Presence of an assisting focused Nd:YAG laser ablation. The laser ablation of the graphite target leads to vapor Plume plasma expending into the ambient nitrogen arc discharge area. X-ray photoelectron spectroscopy and Auger electron spectroscopy were used to identify the binding structure and the content of the nitrogen species in the deposited films. The surface morphology of the films was studied using a scanning electron microscopy Data of infrared spectroscopy and x-ray photoelectron spectroscopy indicate the existence of carbon-nitrogen bonds in the films. The x-ray diffraction measurements have also been taken to characterize the crystal properties of the obtain films.

• Applied Microscopy
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• 제36권1호
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• pp.7-16
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• 2006

가속전압 1.3MV의 초고전압투과전자현미경의 원격제어 시스템을 개발하였다. 초고전압투과전자현미경의 운영을 위한 필수적인 기능, 즉 stage조정, 시편의 tilting, TV카메라 선택과 영상 저장 등을 원격 운영시스템에 그대로 적용하였다. 특히 이 시스템은 간단한 웹 접속만으로 goniometer를 완벽하고 정밀하게 제어할 수 있으며 고해상도 디지털카메라를 제어할 수 있는 특징을 가지고 있다. 일체의 현미경 제어 신호 및 교신은 글로리아드 망을 통하여 이루어지도록 하였다. 이는 HVEM원격 운영시스템을 이용하여 국내는 물론 국제적인 공동 연구를 수행할 수 있는 가상 실험실 구축을 실현할 수 있음을 시사한다.

• 한국공작기계학회논문집
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• 제16권5호
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• pp.122-128
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• 2007

The electric part of thermal SEM(Scanning Electron Microscopy) consists of high voltage generation, lens control, and image processing. Several methodologies for enhancing SEM image are addressed and those results are verified through analyses and experiments. The controller employes a DSP(Digital Signal Processing), making the system more flexible and convenient than the classical analogue based controller. In some parts based the analog circuit, there are inevitable sources of noise and image distortion. The experimental investigation is provided along with analytical proof to enhance the SEM image.

• Applied Microscopy
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• 제34권1호
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• pp.13-21
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• 2004

최근에 한국기초과학지원연구원에 설치된 초고전압 투과전자현미경은 원자분해능(점분해능 $1.2{\AA}$ 이하)의 구현과 고경사각 tilting 기능(${\pm}60^{\circ}$)에 의해 시편의 원자배열 구조를 3차원적으로 이미징할 수 있는 고성능 투과전자현미경이다. 이에 더하여 FasTEM이라는 원격 운용 시스템이 갖춰져 있어서 장비의 직접운용에 따른 여러 제약을 극복할 수 있게 한다. 초고전압 투과전자현미경의 원격운용을 위해 FasTEM 원격 시스템은 본원 초고전압 투과전자현미경에 설치된 Server 시스템과 서울분소에 설치된 Client 콘솔 시스템을 155 Mbps급 초고속 선도망 KOREN에 연결하여 구성하였으며 서울분소에서 대전본원의 초고전압 투과전자현미경을 운영하여 Au의 [001] 고분해능 영상을 얻는데 성공하였다. 초고전압 투과전자 현미경의 조사계 및 결상계 시스템 파라메타들의 조정, 각각의 detector 시스템 조정과 이미징, goniometer와 aperture 구동을 위한 motor-driven system들의 동작 등 초고전압 투과전자현미경의 원격 조정은 원격 작업자가 현장에 있는 것과 마찬가지로 실시간 운용이 가능하였다. 초고전압 투과전자현미경과 IT 기반기술의 접목에 의해 실현된 원격운용 기능은 국가적 공동연구시설에 대한 e-Science Grid를 구축하는데 중요한 역할을 하리라 기대된다.

• 한국전자현미경학회:학술대회논문집
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• 한국현미경학회 2001년도 제32차 추계학술대회
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• pp.18-22
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• 2001

A technique to characterize specific site of materials using a combination of a dedicated focused ion beam system(FIB), and Intermediate-voltage scanning transmission electron microscope(STEM) or transmission electron microscope(TEM) equipped with a scanning electron microscope(SEM) unit has been developed. The FIB system is used for preparation of electron transparent thin samples, while STEM or TEM is used for localization of a specific site to be milled in the FIB system. An FIB-STEM(TEM) compatible sample holder has been developed to facilitate thin sample preparation with high positional accuracy Positional accuracy of $0.1{\mu}m$ or better can be achieved by the technique. In addition, an FIB micro-sampling technique has been developed to extract a small sample directly from a bulk sample in a FIB system These newly developed techniques were applied for the analysis of specific failure in Si devices and also for characterization of a specific precipitate In a metal sample.

• Applied Microscopy
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• 제36권spc1호
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• pp.41-46
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• 2006

Interfacial atomic structure (chemical structure) of a Pd/ZnO hetero junction was investigated by atomic resolution high voltage transmission electron microscopy (ARHVTEM). A misfit dislocation did not work as a stress accommodation mechanism in the ZnO(0001)/Pd (111) interface. But the periodic stress localization occurred in the ZnO($10\bar{1}0$)/(200) interface. The periodicity of the local strain coincided with that of misfit dislocation. Atomic structure image of the ARHVTEM showed that an atomic arrangement across the interface was in the order of O-Zn-Pd. It was shown that mechanical weakness of the ZnO(0001)/Pd(111) interface against cyclic heating is attributable to the absence of the periodic stress localization of the misfit dislocation.

• 한국표면공학회지
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• 제50권6호
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• pp.439-446
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• 2017

Plasma electrolyte oxidation (PEO) is a kind of anodization, in which a very high voltage or current is applied to a metal substrate in various electrolytes, allowing distinctly thick thickness of the oxide film with outstanding film properties, such as a good corrosion resistance, mechanical strength, thermal stability, and excellent adhesion to a substrate. Herein, we tried to find the optimal pretreatment conditions among commercially available solutions in order to produce PEO anodizing at relatively low voltage. We characterized the surface morphologies of the sample by scanning electron microscope (SEM), atomic force microscopy (AFM), and investigated color parameters of the pretreated surface of Ti by spectrophotometer.

• Applied Microscopy
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• 제37권2호
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• pp.111-121
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• 2007

Diffractogram 법을 이용하여 한국기초과학지원연구원에 설치된 초고전압 투과전자현미경(KBSI-HVEM)의 대물렌즈에 대한 구면수차 계수와 분해능을 측정하였다. 측정 정밀도 향상을 위해 획득한 diffractoram을 디지털 처리하였고 각 intensity 분포 그래프를 graphical curve fitting으로 정밀하게 분리하였다. 정밀 측정을 위한 실험적 고려 사항들을 고찰하였고 최적 실험 조건 도출을 위한 방안들을 본 실험을 통해 제안하였다. 실험적으로 측정된 대물렌즈의 구면수차 계수는 $2.628{\pm}0.04\;mm$였으며 이 값은 제조사에서 대물렌즈 설계 시 제안한 $C_s=2.61\;mm$와 거의 일치하는 값이었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.62-62
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• 2015

In this study, we study the effects of CF4 plasma treatment on the characteristics of enhancement mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs). The CF4 plasma is generated by inductively coupled plasma reactive ion etching (ICP-RIE) system. The CF4 gas is decomposed into fluorine ions by ICP-RIE and then fluorine ions will effect the AlGaN/GaN interface to inhibit the electron transport of two dimension electron gas (2DEG) and increase channel resistance. The CF4 plasma method neither like the recessed type which have to utilize Cl2/BCl3 to etch semiconductor layer nor ion implantation needed high power to implant ions into semiconductor. Both of techniques will cause semiconductor damage. In the experiment, the CF4 treatment time are 0, 50, 100, 150, 200 and 250 seconds. It was found that the devices treated 100 seconds showed best electric performance. In order to prove fluorine ions existing and CF4 plasma treatment not etch epitaxial layer, the secondary ion mass spectrometer confirmed fluorine ions truly existing in the sample which treatment time 100 seconds. Moreover, transmission electron microscopy showed that the sample treated time 100 seconds did not have etch phenomena. Atomic layer deposition is used to grow Al2O3 with thickness 10, 20, 30 and 40 nm. In electrical measurement, the device that deposited 20-nm-thickness Al2O3 showed excellent current ability, the forward saturation current of 210 mA/mm, transconductance (gm) of 44.1 mS/mm and threshold voltage of 2.28 V, ION/IOFF reach to 108. As IV concerning the breakdown voltage measurement, all kinds of samples can reach to 1450 V.