• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.12 no.2
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• pp.150-154
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• 2019

In the design of semiconductor integrated circuits, ESD is one of the important issues related to product quality improvement and reliability. In particular, as the process progresses and the thickness of the gate oxide film decreases, ESD is recognized as an important problem of integrated circuit design. Many ESD protection circuits have been studied to solve such ESD problems. In addition, the proposed device can modify the existing SCR structure without adding external circuit to effectively protect the gate oxide of the internal circuit by low trigger voltage, and prevent the undesired latch-up phenomenon in the steady state with high holding voltage. In this paper, SCR-based novel ESD(Electro-Static Discharge) device with the high holding voltage has been proposed. The proposed device has the lower triggering voltage without an external trigger circuitry and the high holding voltage to prevent latch-up phenomenon during the normal condition. Using TCAD simulation results, not only the design factors that influence the holding voltage, but also comparison of conventional ESD protection device(ggNMOS, SCR), are explained. The proposed device was fabricated using 0.35um BCD process and was measured electrical characteristic and robustness. In the result, the proposed device has triggering voltage of 13.1V and holding voltage of 11.4V and HBM 5kV, MM 250V ESD robustness.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.1
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• pp.36-41
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• 2011

Medical X-ray has been brought many changes according to the rapid development of high technology. Especially, for high-voltage generator which is the most important in X-ray generation the traditional way is to use high-voltage electric transformers primarily. However, since it is large and heavy and the ripple rate of DC high-voltage applied to X-ray tube is too big, it has a disadvantage of low X-ray production efficiency. To solve these problems, the studies about high-voltage power supply are now proceeding. At present, the high-voltage generator that generates high-voltage by making high frequency using inverter control circuit consisting of semiconductor device is mainly used. High-voltage generator using inverter has advantages in the diagnosis using X-ray including high performance with short-term use, miniaturization of power supply and ripple reduction. In this study, the X-ray high-voltage device with inverter type using pulse width modulation scheme to the control of tube voltage and tube current was designed and produced. For performance evaluation of produced device, the control signal analysis, irradiation dose change and beam quality depending on the load variation of tube voltage and tube current were evaluated.

• Journal of Information Technology Applications and Management
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• v.26 no.6
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• pp.103-117
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• 2019

Demand for high power motors is rapidly increasing as the 4th industry and convergence technology has recently emerged. In order to produce high-strength permanent magnets, the magnets used for magnetization have been increased from DC 300V in the 1970s to DC 2.5kV in the 2010s, Up to DC 10kV in the 2030s, It is expected that higher voltage will be used to magnetize. However, in the case of a magnetizer using an existing electric signal control device, it is necessary to use a control device with a high-voltage insulation function in case a high voltage used for magnetization is leaked to the control device. If a short circuit accident occurs, the controller must be shut down and serious problems such as excessive repair costs arise. In this study, a control system adopting optical communication method instead of electric signal control method is proposed to prevent leakage currents in high-voltage magnetizer. We design a transmitter(Tx) and a receiver(Rx) device for the optical communication control device and implemented a prototype connecting the optical cable. In order to demonstrate the utility of high-voltage magnetizer using the optical communication control device, we analyzed the initial cost and the yearly cost for the years to analyze the net present value. As a result, In the case of the low-voltage magnetizer, the electric signal control method cost less, As the operating voltage of the magnetizer becomes higher. It is confirmed that it takes less cost when the optical communication control device is used.

• Nuclear Engineering and Technology
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• v.56 no.6
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• pp.2395-2403
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• 2024

With the rapid development of DC high voltage accelerator, higher requirements have been raised for the design of DC high voltage power supply, requiring more stable high voltage with lower output ripple. Therefore, it also puts forward higher requirements for the parameter design of the voltage doubling rectifier circuit, which is the core component of the DC high voltage power supply. In order to obtain output voltage with better performance, the effects of the working frequency, the stage capacitance and the load resistance on the output voltage of the voltage doubling rectifier circuit are studied in detail by simulation. It can be concluded that the higher the working frequency of the transformer, the larger the stage capacitance, the larger the load resistance and the better the output voltage performance in a certain range. Based on this, a 2.5 MV voltage doubling rectifier circuit driven by a 120 kHz frequency transformer is designed, developed and tested for the power supply of the neutron source device towards BNCT. Experimental results show that this voltage doubling rectifier circuit can satisfy the design requirements, laying a certain foundation for the engineering design of DC high voltage power supply of neutron source device.

• Proceedings of the IEEK Conference
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• 1999.06a
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• pp.239-242
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• 1999

In this paper, we report the process/device design of high-speed, high-voltage SOI smart power IC for mobile communication system, high-speed HDD system and the electronic control system of automobiles. The high voltage LDMOS with 70V breakdown voltage under 0.8${\mu}{\textrm}{m}$ design rule, the high voltage bipolar with 40V breakdown voltage for analog signal processing, the high speed bipolar with cut-off frequency over 20㎓ and LDD NMOS for high density were proposed and simulated on a single chip by the simulator DIOS and DESSIS. And we extracted the process/device parameters of the simulated devices.

• Journal of Advanced Marine Engineering and Technology
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• v.23 no.2
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• pp.159-167
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• 1999

This paper presents a new transient voltage blocking device(TOBD)which low power and high frequency bandwidth to protect info-communication facilities from transient voltages. Conventional protection devices have some problems such as low frequency bandwidth low ener-gy capacity and high remnant voltage. in order to improve these limitations a hybrid type TOBD which consists of a gas tube avalanche diodes and junction type field effect transistor (JFETs) is developed. The TOBD differs from the conventional protection devices in configuration and JFETs are used as an active non-linear element and a high speed switching diode with low capacitance limited high current. Therefore the avalanche diode with low energy capacity are protected from the high current and the TOBD has a very small input capacitance. From the performance test using combination surge generator which can produce $1.2/50{\mu}m$ 4.2 kV/max, $8/20{\mu}m$ 2.1 kAmax it is confirmed that the proposed TOBD has an excellent protection per-formance in tight clamping voltage and limiting current characteristics.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2000.10a
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• pp.577-580
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• 2000

The aim of this paper is to develop a high stable measuring device for radioactive pulses. The device consists of a high voltage supply unit using a fly-back converter principle, and a pulse detection unit for gamma-rays and neutrons. The high voltage supply unit designed can generate DC voltage up to 1,500v at 5V-input, and have a series voltage regulator to maintain the output voltage constantly, resulting in less than 1.63% of voltage regulation. The pulse detection parts consists of an active integrator, a pole-zero circuit, and a 3-stage amplifier of 60 dB, and its frequency bandwidth is from 37 Hz to 300 kHz. From the experimental results, it is confirmed that the measuring device can count at least 10,000 pulses in a second.

• Proceedings of the IEEK Conference
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• 2000.11b
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• pp.249-252
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• 2000

A new Smart rower IC's based on the Partial SOI technology was designed for such applications as mobile communication systems, high-speed HDD systems etc. A new methodology of integrating a 0.8${\mu}{\textrm}{m}$ BiCMOS compatible Smart Power technology, high voltage bipolar device, high speed SAVEN bipolar device, LDD NMOSFET and a new LDMOSFET based on the Partial SOI technology is presented in this paper. The high voltage bipolar device has a breakdown voltage of 40V for the output stage of analog circuit. The optimized Partial SOI LDMOSFET has an off-state breakdown voltage of 75 V and a specific on- resistance of 0.249mΩ.$\textrm{cm}^2$ with the drift region length of 3.5${\mu}{\textrm}{m}$. The high-speed SAVEN bipolar device shows cut-off frequency of about 21㎓. The simulator DIOS and DESSIS has been used to get these results.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.4
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• pp.214-217
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• 2017

An IGBT (insulated gate bipolar transistor) device has an excellent current-conducting capability. It has been widely employed as a switching device to use in power supplies, converters, solar inverters, and household appliances or the like, designed to handle high power. The aim with IGBT is to meet the requirements for use in ideal power semiconductor devices with a high breakdown voltage, an on-state voltage drop, a high switching speed, and high reliability for power-device applications. In general, the concentration of the drift region decreases when the breakdown voltage increases, but the on-resistance and other characteristics should be reduced to improve the breakdown voltage and on-state voltage drop characteristics by optimizing the design and structure changes. In this paper, using the T-CAD, we designed the NPT-IGBT (non punch-through IGBT) and FS-IGBT (field stop IGBT) and analyzed the electrical characteristics of those devices. Our analysis of the electrical characteristics showed that the FS-IGBT was superior to the NPT-IGBT in terms of the on-state voltage drop.

• Journal of IKEEE
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• v.13 no.1
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• pp.87-93
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• 2009

The paper introduces a silicon controlled rectifier (SCR)-based device with high holding voltage for ESD power clamp. The holding voltage can be increased by extending a p+ cathode to the first n-well and adding second n-well wrapping around n+ cathode. The increase of the holding voltage above the supply voltage enables latch-up immune normal operation. In this study, the proposed device has been simulated using synopsys TCAD simulator for electrical characteristic, temperature characteristic, and ESD robustness. In the simulation result, the proposed device has holding voltage of 3.6V and trigger voltage of 10.5V. And it is confirmed that the device could have holding voltage of above 4V with the size variation of extended p+ cathode and additional n-well.