• Journal of Powder Materials
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• v.14 no.5
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• pp.315-319
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• 2007

Pure WC or WC with low Co concentration less than 0.5 wt.% is studied to fabricate high density WC/Co cemented carbide using vacuum sintering and post HIP process. Considering the high melting point of WC, it is difficult to consolidate it without the use of Co as binder. In this study, the effect of lower Co addition on the microstructure and mechanical properties evolution of WC/CO was investigated. By HIP process after vacuum sintering, hardness and density was sharply increased. The hardness values was $2,800kgf/mm^2$ using binderless WC.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.12
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• pp.797-801
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• 2015

In this study ensuring a filming technology is attempted through dispersion technologies and mixing polymer scaffolds in order to produce films based on the nanowaires obtained from chitin. In addition this study proposes technologies in measuring and improving characteristics of films produced using nanowires and for applying electric conductivity to the films as a chemical and physical manner. Also, a possibility in applications of mass productive films or substrates to producing flexible and transparent films is proposed. In the experiment implemented in this study, it is verified that developments of high strength, high transparency, and high flexibility films can be developed through combining it with producing flexible and transparent films.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.708-709
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• 2006

New Al-based alloys with very high ultimate tensile strength were developed in high Al concentration range of 91-95 at.% for Al-Fe-Cr-Ti-M (M: Co and Mo) systems and Al-Fe-Cr-Mo-Ti-Co system by the dispersion of nanoscale quasicrystalline particles in Al phase. The effect of adding elements, M was discussed in the viewpoint of stability of super-cooled liquid state and formation ability of quasicrystalline phase. The P/M Al-Fe-Cr-Ti-M alloys with dispersed nanoscale quasicrystalline particles exhibited ultimate tensile strength of 350MPa at 573K and 200MPa at 673K.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.4
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• pp.280-284
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• 2011

Silicon carbide (SiC)-based gas sensors can be operated at very high temperatures. So far, catalytic metal-schottky diodes respond fast to a change between a reducing and an oxidizing atmosphere. Therefore SiC diodes have been suggested for high temperature gas sensor applications. In this work, the effect of reactivity of the catalytic surface on the 4H-SiC sensor-structures in 375 K~775 K have been studied and some fundamental simulations have also been performed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.05b
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• pp.43-46
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• 2004

Recently many research activities on the diagnosis of stator winding insulation of high-voltage motors have been reported. Most of them utilize a trend analysis of partial discharges. In this paper, a novel on-line monitoring system for an insulation diagnosis is proposed. This system displays magnitude and phase angle distribution of partial discharge. The partial discharge activities can be interpreted more precisely by these techniques.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.102-103
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• 2007

The electrical characteristics of high power LIGBT implemented by CMOS process are described and compared with those of high voltage LDMOSFET with the same device dimensions. LIGBT has exhibited approximately 8 times superior current drive capability than LDMOSFET. The proposed p+/n+ anode structure resulted in the significant increase of on-state breakdown voltage of LIGBT. Therefore, LIGBT suggested in this paper is one of the promising candidate for smart power IC applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.244-245
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• 2007

Specially, High Temperature Superconducting power-transmission cable(HTS cable), 3-phase 100m long, 22.9kV class HTS power transmission cable system have been developed by Korea Electrotechnology Research Institute (KERI) and LS cable Ltd. that is one of 21st century frontier project in Korea. This cable was installed in KEPCO(Go-chang) testing site. In case of manufacturing HTS cable, superconducting joint is very important because they need very long tapes. Therefore, this paper gives some investigation of AC Loss in joined HTS tape by using several joint methods. Finally, this paper was shown background data for the form of HTS cable joint.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.353-356
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• 2004

This paper discribes the analysis of the I-V characteristics of 4H-SiC DiMOSFET with single epi-layer Silicon Carbide has been around for over a century. However, only in the past two to three decades has its semiconducting properties been sufficently studied and applied, especially for high-power and high frequency devices. We present a numerical simulation-based optimization of DiMOSFET using the general-purpose device simulator MINIMIS-NT. For simulation, a loin thick drift layer with doping concentration of $5{\times}10^{15}/cm^3$ was chosen for 1000V blocking voltage design. The simulation results were used to calculate Baliga's figure of Merit (BFOM) as the criterion structure optimization and comparison.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.193-194
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• 2005

By the high-temperature pad conditioning process: The slurry residues in pores and grooves of the polishing pad were clearly removed. These clear pores and enlarged grooves made the slurry attack the oxide surface. The changed slurry properties by high-temperature pad conditioning process made the oxide surface hydro-carbonate to be removed easily.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.4
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• pp.291-296
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• 2020

The high power of a shingled photovoltaic module can be attributed to its low cell-to-module loss. The production of high power modules in limited area requires high efficiency solar cells. Shingled photovoltaic modules can be made by divided solar cells, which can be produced by the laser scribing process. After dividing the 21% PERC cell using laser scribing, the efficiency decreased by approximately 0.35%. However, there was no change in the efficiency of the solar cell having relatively lower efficiency, because the laser scribing process induce higher heat damages in solar cells with high efficiency. To prove this phenomena, the J₀ (leakage current density) of each cell was analyzed. It was found that the J₀ of 21% PERC increased about 17 times between full and divided solar cell. However, the J₀ of 20.2% PERC increased only about 2.5 times between full and divided solar cell.