한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
- /
- Pages.102-103
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- 2007
CMOS 공정으로 구현한 고 전력 LIGBT 소자의 전기적 특성
Electrical Characteristics of High-Power LIGBT Devices Implemented by CMOS Process
- 이주욱 (한국전자통신연구원 IT 융합부품 연구소) ;
-
박훈수
(위덕대학교 반도체전자공학부)
;
-
구진근
(한국전자통신연구원 IT 융합부품 연구소)
;
-
강진영
(한국전자통신연구원 IT 융합부품 연구소)
- Lee, Ju-Wook (Dept. of IT Convergence & Component Lab., ETRI) ;
-
Park, Hoon-Soo
(Dept of Semiconductor Eng., Uiduk University)
;
-
Koo, Jin-Gun
(Dept. of IT Convergence & Component Lab., ETRI)
;
-
Kang, Jin-Yeong
(Dept. of IT Convergence & Component Lab., ETRI)
- 발행 : 2007.06.21
초록
The electrical characteristics of high power LIGBT implemented by CMOS process are described and compared with those of high voltage LDMOSFET with the same device dimensions. LIGBT has exhibited approximately 8 times superior current drive capability than LDMOSFET. The proposed p+/n+ anode structure resulted in the significant increase of on-state breakdown voltage of LIGBT. Therefore, LIGBT suggested in this paper is one of the promising candidate for smart power IC applications.