• JSTS:Journal of Semiconductor Technology and Science
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• 제1권2호
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• pp.95-102
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• 2001

Hafnium oxide thin films for gate dielectric were deposited at $300^{\circ}C$ on p-type Si (100) substrates by plasma enhanced chemical vapor deposition (PECVD) and annealed in $O_2$ and $N_2$ ambient at various temperatures. The effect of hydrogen treatment in 4% $H_2$ at $350^{\circ}C$ for 30 min on the electrical properties of $HfO_2$for gate dielectric was investigated. The flat-band voltage shifts of $HfO_2$capacitors annealed in $O_2$ambient are larger than those in $N_2$ambient because samples annealed in high oxygen partial pressure produces the effective negative charges in films. The oxygen loss in $HfO_2$films was expected in forming gas annealed samples and decreased the excessive oxygen contents in films as-deposited and annealed in $O_2$ or $N_2$ambient. The CET of films after hydrogen forming gas anneal almost did not vary compared with that before hydrogen gas anneal. Hysteresis of $HfO_2$films abruptly decreased by hydrogen forming gas anneal because hysteresis in C-V characteristics depends on the bulk effect rather than $HfO_2$/Si interface. The lower trap densities of films annealed in $O_2$ambient than those in $N_2$were due to the composition of interfacial layer becoming closer to $SiO_2$with increasing oxygen partial pressure. Hydrogen forming gas anneal at $350^{\circ}C$ for samples annealed at various temperatures in $O_2$and $N_2$ambient plays critical role in decreasing interface trap densities at the Si/$SiO_2$ interface. However, effect of forming gas anneal was almost disappeared for samples annealed at high temperature (about $800^{\circ}C$) in $O_2$ or $N_2$ambient.

• 한국재료학회지
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• 제18권3호
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• pp.148-152
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• 2008

A new cost-effective atomic layer deposition (ALD) technique, known as Proximity-Scan ALD (PS-ALD) was developed and its benefits were demonstrated by depositing $Al_2O_3$ and $HfO_2$ thin films using TMA and TEMAHf, respectively, as precursors. The system is consisted of two separate injectors for precursors and reactants that are placed near a heated substrate at a proximity of less than 1 cm. The bell-shaped injector chamber separated but close to the substrate forms a local chamber, maintaining higher pressure compared to the rest of chamber. Therefore, a system configuration with a rotating substrate gives the typical sequential deposition process of ALD under a continuous source flow without the need for gas switching. As the pressure required for the deposition is achieved in a small local volume, the need for an expensive metal organic (MO) source is reduced by a factor of approximately 100 concerning the volume ratio of local to total chambers. Under an optimized deposition condition, the deposition rates of $Al_2O_3$ and $HfO_2$ were $1.3\;{\AA}/cycle$ and $0.75\;{\AA}/cycle$, respectively, with dielectric constants of 9.4 and 23. A relatively short cycle time ($5{\sim}10\;sec$) due to the lack of the time-consuming "purging and pumping" process and the capability of multi-wafer processing of the proposed technology offer a very high through-put in addition to a lower cost.

• 한국인터넷방송통신학회논문지
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• 제16권4호
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• pp.165-170
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• 2016

우리 나라에서 발전소가 전기를 생산하고 고전압 전력을 공급하기 위하여 채택한 XLPE 케이블(또는 CV케이블)은 포설된지 40년에 이르고 있다. 설치환경 및 사용조건에 다르겠지만, 설치 후 운전 상태에 있는 CV 케이블은 6~8년의 기간이 경과하면 열화가 발생하기 시작하고, 상태가 나빠지는 경우, 절연 파괴현상으로 인한 휴전 및 화재 사고가 발생한다는 많은 사례 보고가 있다. 근래에 포설한 케이블이라 할지라도 시공 불량이나 기타의 열악한 주변 환경으로 인한 악조건 상태에 노출되는 경우, 6~8년 미만의 시점에서도 사고가 발생할 수가 있다. 사고를 미연에 방지하기 위하여 케이블의 동작상 태를 정기적으로 감시 확인하여야 한다. 우리는 케이블의 사고를 체계적으로 감시 및 예방하기 위하여 측정 장비를 개발하였다. 이 논문에서 케이블의 절연 상태의 열화 상태를 감시하기 위하여 한국서부발전 주식회사(Korean Western Power Co. Ltd.)에 설치하여 운영 중에 있는 장비의 설계와 그 장비를 사용하여 측정한 결과즉, 케이블의 열화 과정을 나타내는 결과를 제시한다.

• 한국인터넷방송통신학회논문지
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• 제17권6호
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• pp.83-88
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• 2017

본 논문에서는 유도무기용 탐색기의 송신 시 고 전력 송수신 신호 분리를 위한 Ka-대역 밀리미터파 3-포트 도파관 순환기를 설계, 제작하였으며 상온에서의 S-parameter 시험, 고 전력 시험, 운용 온도 시험을 통해 성능을 검증하였다. 탐색기 안테나와의 인터페이스 설계 및 소형, 경량화를 위한 표준 도파관 높이의 half-size 설계를 적용하였다. 전기적 성능 구현을 위해 시뮬레이션을 통한 구성 부품인 영구자석, 페라이트 최적 형상 설계 및 포트 별 튜닝 유전체 적용을 통해 성능을 최적화 하였다. 설계된 도파관 순환기는 중심 주파수 Fc 기준 ${\pm}1000MHz$의 대역에서 -20 dB 이하 반사 손실, 0.5 dB 이하 삽입 손실, -23 dB 이하 분리도 특성을 가지며, 측정 결과는 설계 결과와 유사함을 확인하였다.

• 한국인터넷방송통신학회논문지
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• 제15권5호
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• pp.207-212
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• 2015

지속적이고 고품질의 전기 에너지의 공급은 현대 경제 사회에서 중요하다. 발전소에서 동작하는 모든 장비들은 신뢰할 수 있어야 하며 안전해야 한다. 변압기, 케이블, 발전기 및 개폐 장치 등의 주요 전력 장비들은 완전한 상태로 동작하여야 한다. 송전의 유일한 수단으로 사용되고 있는 케이블은 수명이 30년 이라고 제작 시에 선언되고 있다. 케이블 두 도체 사이의 절연체는 입력 고전압으로 부터의 전기적인 응력[應力]을 유지해야한다. 이러한 조건이 케이블의 동작 기간 전체에 걸쳐서 입증되어야 한다. 초저주파수(VLF) tan${\delta}$, 부분 방전, 절연 저항을 이용한 몇 가지 기술들이 케이블의 동작 상태를 진단하기 위하여 사용되고 있다. 우리는 이 논문에서 충청남도 태안에 위치한 (주)서부 발전소에서 설치 운영되고 있는 고전력 케이블들의 동작 특성을 진단하기 위하여 절연 저항을 이용한 결과, 예상을 초과하여 38 년의 수명을 가지고 있는 케이블이 존재한다는 사실을 확인하였다.

• 한국세라믹학회지
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• 제45권11호
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• pp.701-706
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• 2008

High frequency dielectric ceramics have potential for applications in mobile and satellite communications systems at frequencies higher than 10GHz. The Ba$(Zn_{1/3}Ta_{2/3})O_3$ ceramics are known to have a high quality factor, a small temperature coefficient of the resonance frequency and a high dielectric constant. On the other hands, sintering at high temperature for extended time is required to obtain the ordered structure for high quality factor. In this study, the microwave dielectric properties of $ZrO_2$ and NiO-added Ba$(Zn_{1/3}Ta_{2/3})O_3$ ceramics prepared by solid-state reaction have been investigated. Adding $ZrO_2$ and NiO could effectively promote the densification even the case of decreasing the sintering time. At the surface of samples, secondary phase of Ba-Ta compounds was formed possibly due to the evaporation of ZnO, however, the interior of the samples remained as pure Ba$(Zn_{1/3}Ta_{2/3})O_3$. The samples sintered at $1600^{\circ}C$ for 2h exhibited 1:2 ordering of Zn and Ta cations. Excellent microwave dielectric properties of $Q{\cdot}f$(>96,000 GHz) and ${\varepsilon}_r$=30 has been obtained.

• Transactions on Electrical and Electronic Materials
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• 제4권3호
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• pp.34-37
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• 2003

[ $HfO_2$ ] and $HfO_xN_y$ films were deposited by plasma-enhanced chemical vapor deposition using $Hf[OC(CH_3)_3]_4$ as the precursor in the absence of $O_2$. The crystallization temperature of the $HfO_xN_y$ films is higher than that of the $HfO_2$ film. Nitrogen incorporation in $HfO_xN_y$ was confirmed by auger electron spectroscopy analysis. After post deposition annealing (PDA) at 800$\Box$, the EOT increased from 1.34 to 1.6 nm in the $HfO_2$ thin films, whereas the increase of EOT was suppressed to less than 0.02 nm in the $HfO_xN_y$. The leakage current density decreased from 0.18 to 0.012 $A/cm^2$ with increasing PDA temperature in the $HfO_2$ films. But the leakage current density of $HfO_xN_y$ does not vary with increasing PDA temperature because an amorphous $HfO_xN_y$ films suppresses the diffusion of oxygen through the gate dielectric.

• 한국전기전자재료학회논문지
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• 제33권2호
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• pp.88-92
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• 2020

Thermal effects in bulk and SOI FinFETs are briefly reviewed herein. Different techniques to measure these thermal effects are studied in detail. Self-heating effects show a strong dependency on geometrical parameters of the device, thereby affecting the reliability and performance of FinFETs. Mobility degradation leads to 7% higher current in bulk FinFETs than in SOI FinFETs. The lower thermal conductivity of SiO₂ and higher current densities due to a reduction in device dimensions are the potential reasons behind this degradation. A comparison of both bulk and SOI FinFETs shows that the thermal effects are more dominant in bulk FinFETs as they dissipate more heat because of their lower lattice temperature. However, these thermal effects can be minimized by integrating 2D materials along with high thermal conductive dielectrics into the FinFET device structure.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.237.1-237.1
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• 2016

Electrical properties of graphene-based field effect transistors (G-FETs) can be degraded in ambient conditions owing to physisorbed oxygen or water molecules on the graphene surface. Passivation technique is one of a fascinating strategy for fabrication of G-FETs, which allows to sustain electrical properties of graphene in the long term without disrupting its inherent properties: transparency, flexibility and thinness. Ironically, despite its importance in producing high performance graphene devices, this method has been much less studied compared to patterning or device fabrication processes. Here we report a novel surface passivation method by using atomically thin self-assembled alkane layers such as C18- NH2, C18-Br and C36 to prevent unintentional doping effects that can suppress the degradation of electrical properties. In each passivated device, we observe a shift in charge neutral point to near zero gate voltage and it maintains the device performance for 1 year. In addition, the fabricated PG-FETs on a plastic substrate with ion-gel gate dielectrics exhibit not only mechanical flexibility but also long-term stability in ambient conditions. Therefore, we believe that these highly transparent and ultra-thin passivation layers can become a promising candidate in a wide range of graphene based electronic applications.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.620-621
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• 2008

Transparent electronics has been one of the key terminologies forecasting the ubiquitous technology era. Several researchers have thus extensively developed transparent oxide-based thin-film transistors (TFTs) on glass and plastic substrates although in general high voltage operating devices have been mainly studied considering transparent display drivers. However, low voltage operating oxide TFTs with transparent electrodes are very necessary if we are aiming at logic circuit applications, for which transparent complementary or one-type channel inverters are required. The most effective and low power consuming inverter should be a form of complementary p-channel and n-channel transistors but real application of those complementary TFT inverters also requires electrical- and even photo-stabilities. Since p-type oxide TFTs have not been developed yet, we previously adopted organic pentacene TFTs for the p-channel while ZnO TFTs were chosen for n-channel on sputter-deposited $AlO_x$ film. As a result, decent inverting behavior was achieved but some electrical gate instability was unavoidable at the ZnO/$AlO_x$ channel interface. Here, considering such gate instability issues we have designed a unique transparent complementary TFT (CTFTs) inverter structure with top n-ZnO channel and bottom p-pentacene channel based on 12 nm-thin nano-oxide/self assembled monolayer laminated dielectric, which has a large dielectric strength comparable to that of thin film amorphous $Al_2O_3$. Our transparent CTFT inverter well operate under 3 V, demonstrating a maximum voltage gain of ~20, good electrical and even photoelectric stabilities. The device transmittance was over 60 % and this type of transparent inverter has never been reported, to the best of our limited knowledge.