• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.760-763
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• 2003

Low Temperature Cofired Ceramics (LTCC) technology is a promising technology to integrate many devices in a module by embedding passive components. For the module substrate, most LTCC structures have dielectric constants below 10 to reduce signal delay time. Some components, which need high dielectric constants, have not been yet embedded in LTCC module. So, embedding capacitor with high capacitance by applying another dielectrics with high dielectric constants in LTCC is an important issue to maximize circuit density in LTCC module. In this study, electrical properties of embedded capacitor fabricated by dielectric paste of high dielectric constants (K-100) and co-firing behavior with LTCC were investigated. To prevent camber development of co-fired structure, constrained sintering process was tested. Dielectric properties of embedded capacitors were calculated from their capacitance and impedance value. Temperature coefficient of capacitance were also measured.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.392-393
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• 2007

In this paper, we report the characteristics inorganic EL device with high dielectric constant materials of PMN, PZT. Fabricated EL device shows stable light emission even at 20kHz -400Volt without any break down failure. Brightness voltage curve of EL device is same with typical EL. As increasing applied voltage, the brightness increased linearly. From the results of Frequency and duty ratio variation, over 50% of brightness increment was seen. Luminous efficiency was increased upto 200V range and saturated over 200V by slow increasement of light emission. We got e bright stable emission of 1733 cd/m2 at the condition of Frequency 35 KHz, Duty 10%, 400V.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.1143-1146
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• 2003

This paper was simulated the electric field distribution in dielectric tube with two layers and spherical dielectric in water. The reactor was made up of the spherical dielectric that is diameter : 2.5[mm], ${\epsilon}_r$ : 5, 25, 100, 1000, 5000 respectively and two glass plate being 2[mm] thickness, ${\epsilon}_r$ : 5 as electrode. The discharge gap was 9[mm]. As a result of the simulation, in case of being about the same value between the dielectric constant of spherical dielectric and water, when the reactor was applied to high voltage, dielectric polarization characteristic was trending toward disappearance. To get more strong electric field, the dielectric constant should be higher comparatively, Increasing the spherical dielectric constant, the location of equippotential line was shifting from the interior to the exterior.

• 한국전기전자재료학회논문지
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• 제20권4호
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• pp.348-351
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• 2007

Recently, Nanotechnology becomes a major issue in most part of industries. Nanotechnology is expected to develop various application products due to nano material mired composites is improved physical and electrical properties compared to conventional composites materials. Dielectric and insulation materials need to develop and improve like other field about nanotechnology. In this paper, we reported dielectric dispersion by size(no filler, $1.2{\mu}m$, 500 nm, 10 nm), frequencies(60, 120, 1 kHz), and temperatures($30{\sim}170^{\circ}C$). Dielectric constant of composites materials with filler shows higher than composites materials without filler and increased depending on rising temperatures in low frequency region. It was the effect that nano-filler and impurities in composites contributed to electrical conductivity. And dielectric properties depending on temperatures shows to change in low frequency region dramatically We analyzed interfacial polarization in low frequency region($10^{-2}$ Hz) and oriented polarization in high frequency region($10^{-5{\sim}6}$ Hz) on composites materials.

• 한국전기전자재료학회논문지
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• 제27권5호
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• pp.303-306
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• 2014

In this paper, by using a dual frequency liquid crystal material, we propose a liquid crystal device with a fast response characteristics. The dual frequency liquid crystal material has a positive dielectric anisotropy value at a low frequency. With a high frequency, the dielectric anisotropy becomes negative. Therefore, the relaxation process is governed by not only the elastic deformation, but also the dielectric interaction. The measured decay time and rise time were 0.88 ms and 0.33 ms, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.410-413
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• 2002

In this paper, the performance of high-k dielectric is modeled by observing electrical characteristics through the process and device simulation. ZrO$_2$ on Si substrate is used as test structures to characterize the current-voltage and the capacitance-voltage profiles. In order to verify the simulation results, the experimental results are used as a reference. Based on the modeling results, the methodology can be a potential tool to predict the characteristics of the ZrO$_2$ dielectric.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.92-92
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• 2010

In this paper, the test is performed on MgO, which is used as a filler in epoxy additives, respectively (0, 1.0, 3.0, 5.0, 7.0, 10 [wt%]) for HVDC(high voltage direct current) submarine cable insulating material to improve electrical properties of epoxy resin in high temperature. The breakdown strength due to increasing amount of filler increased to 5.0 [wt%] by the effects of the Coulomb blockade. However, it is confirmed that strength of dielectric breakdown decreased because the filler functioned as impurities and affected the breakdown when filler additive exceeded by 5.0 [wt%] or more. We have found that the highest dielectric breakdown strength of specimen added 5.0 wt% at $25^{\circ}C$, and is more increased approximately 13.7 [%] than virgin specimen.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.663-666
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• 2004

In this paper, we have investigated the structure and dielectric properties of the $(Ba_{0.6}Sr_{0.4})TiO_3$ (BST) thin films film fabricatedon MgO(100)/Si substrate by an alkoxide-based sol-gel method. Both the structure and morphology of films were analyzed by x-ray diffraction (XRD) and atomic force microscope (AFM). For the MgO(100)/Si substrates, the BST thin films exhibited highly (100) orientation. The highly (100)-oriented BST thin films showed high dielectric constant, tunability, and figure of merit (FOM). The dielectric constants, dielectric loss and tunability of the BST thin films annealed at 700 C deposited on the MgO(100)/Si substrates measured at 10 kHz were 515.9, 0.0082, and 54.3 %, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 춘계학술대회 논문집
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• pp.29-32
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• 2005

Poly (methyl methacrylate) (PMMA) is one of the promising representive of polymer gate dielectric for its high resistivity and sutible dielectric constant. PMMA (Mw=96700) films were prepared on p-Si by spin coating method. PMMA were coated compactively and flatly as observeed by AFM. MIS(Al/PMMA/p-Si) structure was made and capacitance-voltage (C-V) and current-voltage (I-V) measurements were done with PMMA films for different thermal treatment temperature. PMMA films were showed proper dielectric constant and breakdown voltage. Above the glass transition temperature PMMA films degraded. C-V measured at various frequencies, dielectric constant increased a little. The absence of hysteresis in the C-V characteristics, which eliminate the possibility of mobile charges in the PMMA films. The observed thermal stability, smooth surfaces, dielectric constant, I-V behavior implies PMMA formed by spin coating can be used as an efficient gate dielectric layer in OTFTs.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.826-828
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• 2003

With a new PDP transparent dielectric layer formation technique, we were able to make dielectric layer with high transmittance by using dry film type dielectric material. We optimized dielectric pastes for dry film and they showed good process properties in lamination , drying and firing.