• Resources Recycling
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• v.32 no.1
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• pp.60-66
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• 2023

As supply chain management becomes a key factor in the sustainable growth of the industry, securing minerals at the national or corporate level is becoming important. Depending on the industrial structure, the economic status of each minerals is different and the supply risk is different In this study, to examine the economic status of minerals, an index that can quantify the Industrial Economic Importance by minerals was developed and calculated by reflecting the demand structure and cost weight of each industry. As a result, Li, Al, Cu, Si, Co, Ni, etc. were evaluated as having high industrial importance in Korea. In addition, by industry, Al, Cu, Zn, and Pb for primary metal manufacturing, general machinery, assembly metals,Sn, Ba, Ti, Si and Ga for precision equipment, Si and Ga for semiconductors, and Li, Ni, Co, Si, etc. for electronic components had high industrial importance. Such as Europe and the United States, in order to select Critical-minerals, Korea will need to analyze the economic impact on the domestic industry as well as the risks of supply chain by minerals.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.03a
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• pp.16-16
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• 2010

GaN-based light-emitting diodes (LEDs) are attracting great interest as candidates for next-generation solid-state lighting, because of their long lifetime, small size, high efficacy, and low energy consumption. However, for general illumination applications, the external quantum efficiency of LEDs, determined by the internal quantum efficiency (IQE) and the light extraction efficiency, must be further increased. The IQE is determined by crystal quality and epitaxial layer structure and high value of IQE more than 70% for blue LEDs have been already reported. However, there is much room for improvement of light extraction efficiency because most of the generated photons from active layer remain inside LEDs by total internal reflection at the interface of semiconductor with air due to the high refractive index difference between LEDs epilayer (for GaN, n=2.5) and air (n=1). The light confining in LEDs will be reabsorbed by the metal electrode or active layer, reducing the efficacy of LEDs. Here, we present the first demonstration of enhanced light extraction by forming a MgO nano-pyramids structure on the surface of vertical-LEDs. The MgO nano-pyramids structure was successfully fabricated at room temperature using conventional electron-beam evaporation without any additional process. The nano-sized pyramids of MgO are formed on the surface during growth due to anisotropic characteristics between (111) and (200) plane of MgO. The ZnO layer with quarter-wavelength in thickness is inserted between GaN and MgO layers to increase the critical angle for total internal reflection, because the refractive index of ZnO (n=1.94) could be matched between GaN (n=2.5) and MgO (n=1.73). The MgO nano-pyramids structure and ZnO refractive-index modulation layer enhanced the light extraction efficiency ofV-LEDs with by 49%, comparing with the V-LEDs with a flat n-GaN surface. The angular-dependent emission intensity shows the enhanced light extraction through the side walls of V-LEDs as well as through the top surface of the n-GaN, because of the increase in critical angle for total internal reflection as well as light scattering at the MgO nano-pyramids surface.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.312-312
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• 2013

GaN based light emitting diodes (LEDs) are important devices that are being used extensively in our daily life. For example, these devices are used in traffic light lamps, outdoor full-color displays and backlight of liquid crystal display panels. To realize high-brightness GaN based LEDs for solid-state lighting applications, the development of p-type ohmic electrodes that have low contact resistivity, high optical transmittance and high refractive index is essential. To this effect, indiumtin oxide (ITO) have been investigated for LEDs. Among the transparent electrodes for LEDs, ITO has been one of the promising electrodes on p-GaN layers owing to its excellent properties in optical, electrical conductivity, substrate adhesion, hardness, and chemical inertness. Sputtering and e-beam evaporation techniques are the most commonly used deposition methods. Commonly, ITO films on p-GaN by sputtering have better transmittance and resistivity than ITO films on p-GaN by e-bam evaporation. However, ITO films on p-GaN by sputtering have higher specific contact resistance, it has been demonstrated that this is due to possible plasma damage on the p-GaN in the sputtering process. In this paper, we have investigated the advanced sputtering using plasma damage-free p-electrode. Prepared the ITO films on the GaN based LEDs by e-beam evaporation, normal sputtering and advanced sputtering. The ITO films on GaN based LEDs by sputtering showed better transmittance and sheets resistance than ITO films on the GaN based LEDs by e-beam evaporation. Finally, fabricated of GaN based LEDs by using advanced sputtering. And compared the electrical properties (measurement by using C-TLM) and structural properties (HR-TEM and FE-SEM) of ITO films on GaN based LEDs produced by e-beam evaporation, normal sputtering and advanced sputtering. As a result, It is expected to form plasma damage free-electrode, and better light output power and break down voltage than LEDs by e-beam evaporation and normal sputter.

• The Journal of the Korea institute of electronic communication sciences
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• v.13 no.6
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• pp.1213-1222
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• 2018

The energy band gaps and the bowing parameters of zincblende $GaAs_{1-x}N_x$ on the variation of temperature and composition are determined by using an empirical pseudo-potential method with another virtual crystal approximation, which includes the disorder effect. The bowing parameter is calculated as 15eV and the energy band gaps are decreasing rapidly in $GaAs_{1-x}N_x$ ($0{\leq}x{\leq}0.05$, 300K). A refractive index n and a function of high-frequency dielectric constant ${\varepsilon}$ are calculated by the results of energy band gaps and the calculation results of energy band gaps are consistent with experimental values.

• The Journal of the Korea institute of electronic communication sciences
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• v.14 no.5
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• pp.877-886
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• 2019

The energy band gaps and optical constants of zincblende $In_yGa_{1-y}As_{1-x}N_x$ on the variation of temperature and composition are determined by using band anticrossing method. The energy band gaps are decreasing continuously in $In_yGa_{1-y}As_{1-x}N_x$ ($0{\leq}x{\leq}0.05$, $0{\leq}y{\leq}1.0$, 300K) and the bowing parameter is calculated as 0.522eV. The calculation results of energy band gaps are consistent with those of other studies. A refractive index n and a high-frequency dielectric constant ${\varepsilon}$ are calculated by a proposed modeling equation using the results of energy band gaps.

• Journal of the Optical Society of Korea
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• v.14 no.4
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• pp.415-419
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• 2010

A phosphor-conversion white light source is demonstrated using an InGaN-based blue laser diode (LD) and a yellow-emitting phosphor excited by the blue LD. The photometric and colorimetric properties of this blue-LD-based white light source are characterized. When injection current of the LD is 100 mA, luminous flux and luminous efficiency of the white light are found to be over 5 lm and 10 lm/W, respectively. When injection current is >90 mA, luminance is estimated to be larger than 10 Mcd/$cm^2$. In addition, color characteristics of the white light such as chromaticity coordinates, a correlated color temperature, and a color rendering index are found to be quite stable as current and temperature of the LD varies. The demonstrated LD-based white light source is expected to be used in high-brightness illumination applications with good color stability.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.33 no.6
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• pp.250-254
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• 2023

In this study, Li₂O-BaO-Ga₂O₃-TeO₂-TiO₂-GeO₂ glasses with high transmittance in mid-infrared region and high refractive indices were successfully synthesized. The relationship between glass properties and glass composition was analyzed. In Li₂O-BaO-Ga₂O₃-TeO₂-TiO₂-GeO₂ glass system, as increasing TeO₂ concentration, the refractive index increases and the glass transition temperature decreases. In addition, as increasing BaO concentration, the refractive index increases without decrease of Abbe number. The IR-cut off wavelength shifted to the longer wavelength with increasing TeO₂ and BaO contents due to their large molecular weight. The glass transition temperature significantly decreases when BaO was replaced with Li₂O.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.6
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• pp.357-361
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• 2018

We demonstrated a crack-free ${\alpha}-Ga_2O_3$ on sapphire substrate by horizontal halide vapor phase epitaxy (HVPE). Oxygen-and gallium chloride-synthesized Ga metal and HCl were used as the precursors, and $N_2$ was used as the carrier gas. The HCl flow and growth temperature were controlled in the ranges of 10~30 sccm and $450{\sim}490^{\circ}C$, respectively. The surface of ${\alpha}-Ga_2O_3$ template grown at $470^{\circ}C$ was flat and the root-mean-square (RMS) roughness was ~2 nm. The full width at half maximum (FWHM) values for the symmetric-plane diffractions, were as small as 50 arcsec and those for the asymmetric-plane diffractions were as high as 1,800 arcsec. The crystal quality of ${\alpha}-Ga_2O_3$ on sapphire can be controlled by varying the HCl flow rate and growth temperature.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.243.1-243.1
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• 2016

Recently, many groups have attempted to fabricate 3-dimensional (3D) structures of GaN such as pyramids, rods, stripes and annulars. Since quantum structures on non-polar and semi-polar planes of 3D structures have less influence of internal electric filed, multi quantum wells (MQWs) formed on those planes have high quantum efficiency. Especially, pyramidal and annular structures consist of various crystal planes with different emission wavelength, providing a possibillity of phosphor-free white light emtting diodes (WLEDs).[1] However, it still has problem to obtain high color rendering index (CRI) number because of narrow-band emission and poor indium composition caused by the formation of few number of facets during metal-organic chemical vapor deposition growth.[2] If we can fabricate 3D structure having more various facets, we can make broad-band emittied WLEDs and improve CRI number. In this study, we suggest a simple method to fabricate 3D structures having various facet and containing high indium composition by means of a combination of metal-organic chemical vapor deposition and wet chemical etching techniques.

• Journal of Astronomy and Space Sciences
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• v.29 no.3
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• pp.259-267
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• 2012

Polar cap potential has long been considered as an indicator for the amount of energy flowing in the magnetosphere-ionosphere system. Thus, the estimation of polar cap potential is important to understand the physical process of the magnetosphere. To estimate the polar cap potential in the Northern Hemisphere, merging electric field by Kan & Lee (1979) is adopted. Relationships between the PC index and calculated merging electric field ($E^*$) are examined during full-time and storm-time periods separately. For this purpose Dst, AL, and PC indices and solar wind data are utilized during the period from 1996-2003. From this linear relationship, polar cap potential (${\Phi}^*$) is estimated using the formula by Doyle & Burke (1983). The values are represented as $58.1{\pm}26.9$ kV for the full-time period and $123.7{\pm}84.1$ kV for a storm-time period separately. Considering that the average value of polar cap potential of Doyle & Burke (1983) is about 47 kV during moderately quiet intervals with the S3-2 measurements, these results are similar to such. The monthly averaged variation of Dst, AL, and PC indices are then compared. The Dst and AL indices show distinct characteristics with peaks during equinoctial season whereas the average PC index according to the month shows higher values in autumn than in spring. The monthly variations of the linear correlation coefficients between solar wind parameters and geomagnetic indices are also examined. The PC-AL linear correlation coefficient is highest, being 0.82 with peaks during the equinoctial season. As with the AL index, the PC index may also prove useful for predicting the intensity of an auroral substorm. Generally, the linear correlation coefficients are shown low in summer due to conductance differences and other factors. To assess the role of the PC index during the recovery phase of a storm, the relation between the cumulative PC index and the duration is examined. Although the correlation coefficient lowers with the storm size, it is clear that the average correlation coefficient is high. There is a tendency that duration of the recovery phase is longer as the PC index increases.