• 자원리싸이클링
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• 제32권1호
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• pp.60-66
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• 2023

공급망 관리가 산업의 지속적 성장의 핵심 요소가 되면서 국가적 차원에서 또는 기업적 차원에서 원료가 되는 광물자원의 확보가 중요해지고 있다. 그리고 산업구조에 따라서 광종별 경제적 위상과 공급리스크가 상이하다. 본 연구에서는 광종별 경제적 위상을 살펴보고 위해, 산업별 수요구조와 비용, 비중 등을 반영하여, 광물자원별 국내 산업 경제중요도를 정량할 수 있는 지수(index)를 개발하고 산정하였다. 그 결과 Li, Al, Cu, Si, Co, Ni 등이 우리나라의 산업적 중요도가 높은 것으로 평가되었다. 또한 산업별로 1차금속제조·일반기계·조립금속은 Al, Cu, Zn, Pb 등 베이스메탈이, 정밀기기는 Sn, Ba, Ti이, 반도체는 Si, Ga이, 전자부품은 Li, Ni, Co, Si 등이 산업적 중요도가 높은 것으로 분석되었다. 이러한 결과를 바탕으로 공급망 리스크 등을 추가적으로 반영하여 핵심광물 등을 선정.관리하고 이를 확보하기 위한 전략을 마련해야 할 것이다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 춘계학술회의 초록집
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• pp.16-16
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• 2010

GaN-based light-emitting diodes (LEDs) are attracting great interest as candidates for next-generation solid-state lighting, because of their long lifetime, small size, high efficacy, and low energy consumption. However, for general illumination applications, the external quantum efficiency of LEDs, determined by the internal quantum efficiency (IQE) and the light extraction efficiency, must be further increased. The IQE is determined by crystal quality and epitaxial layer structure and high value of IQE more than 70% for blue LEDs have been already reported. However, there is much room for improvement of light extraction efficiency because most of the generated photons from active layer remain inside LEDs by total internal reflection at the interface of semiconductor with air due to the high refractive index difference between LEDs epilayer (for GaN, n=2.5) and air (n=1). The light confining in LEDs will be reabsorbed by the metal electrode or active layer, reducing the efficacy of LEDs. Here, we present the first demonstration of enhanced light extraction by forming a MgO nano-pyramids structure on the surface of vertical-LEDs. The MgO nano-pyramids structure was successfully fabricated at room temperature using conventional electron-beam evaporation without any additional process. The nano-sized pyramids of MgO are formed on the surface during growth due to anisotropic characteristics between (111) and (200) plane of MgO. The ZnO layer with quarter-wavelength in thickness is inserted between GaN and MgO layers to increase the critical angle for total internal reflection, because the refractive index of ZnO (n=1.94) could be matched between GaN (n=2.5) and MgO (n=1.73). The MgO nano-pyramids structure and ZnO refractive-index modulation layer enhanced the light extraction efficiency ofV-LEDs with by 49%, comparing with the V-LEDs with a flat n-GaN surface. The angular-dependent emission intensity shows the enhanced light extraction through the side walls of V-LEDs as well as through the top surface of the n-GaN, because of the increase in critical angle for total internal reflection as well as light scattering at the MgO nano-pyramids surface.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.312-312
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• 2013

GaN based light emitting diodes (LEDs) are important devices that are being used extensively in our daily life. For example, these devices are used in traffic light lamps, outdoor full-color displays and backlight of liquid crystal display panels. To realize high-brightness GaN based LEDs for solid-state lighting applications, the development of p-type ohmic electrodes that have low contact resistivity, high optical transmittance and high refractive index is essential. To this effect, indiumtin oxide (ITO) have been investigated for LEDs. Among the transparent electrodes for LEDs, ITO has been one of the promising electrodes on p-GaN layers owing to its excellent properties in optical, electrical conductivity, substrate adhesion, hardness, and chemical inertness. Sputtering and e-beam evaporation techniques are the most commonly used deposition methods. Commonly, ITO films on p-GaN by sputtering have better transmittance and resistivity than ITO films on p-GaN by e-bam evaporation. However, ITO films on p-GaN by sputtering have higher specific contact resistance, it has been demonstrated that this is due to possible plasma damage on the p-GaN in the sputtering process. In this paper, we have investigated the advanced sputtering using plasma damage-free p-electrode. Prepared the ITO films on the GaN based LEDs by e-beam evaporation, normal sputtering and advanced sputtering. The ITO films on GaN based LEDs by sputtering showed better transmittance and sheets resistance than ITO films on the GaN based LEDs by e-beam evaporation. Finally, fabricated of GaN based LEDs by using advanced sputtering. And compared the electrical properties (measurement by using C-TLM) and structural properties (HR-TEM and FE-SEM) of ITO films on GaN based LEDs produced by e-beam evaporation, normal sputtering and advanced sputtering. As a result, It is expected to form plasma damage free-electrode, and better light output power and break down voltage than LEDs by e-beam evaporation and normal sputter.

• 한국전자통신학회논문지
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• 제13권6호
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• pp.1213-1222
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• 2018

본 연구에서는 무질서 효과가 고려된, 새로이 가정한 가상 결정 근사법을 갖는 empirical pseudopotential method를 사용하여 온도와 조성비 변화에 따른 3원계 질화물계 화합물 반도체 $GaAs_{1-X}N_X$의 휨 매개변수 및 에너지 밴드갭을 계산하였다. 300K의 조성비 구간($0{\leq}x{\leq}0.05$)에서 에너지 밴드갭들이 급격히 감소하며, 해당하는 계산된 휨 매개변수가 15eV임을 알 수 있었다. 에너지 밴드갭 계산 결과로부터 굴절률 n과 고주파 유전상수 ${\varepsilon}$ 등의 광학상수를 계산하였고, 에너지 밴드갭 계산 결과는 실험치를 대체로 잘 설명하였다.

• 한국전자통신학회논문지
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• 제14권5호
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• pp.877-886
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• 2019

본 연구에서는 band anticrossing 모델을 사용하여 온도와 조성비 변화에 따른 4원계 질화물계 화합물 반도체 $In_yGa_{1-y}As_{1-x}N_x$의 에너지 밴드갭과 광학상수를 계산하였다. 300K의 조성비 구간($0{\leq}x{\leq}0.05$, $0{\leq}y{\leq}1.0$)에서 에너지 밴드갭들이 연속적으로 감소하며, 계산된 휨 매개변수는 0.522eV가 사용되었다. 에너지 밴드갭 계산 결과는 다른 연구 결과와 대체로 잘 일치하였다. 또한 에너지 밴드갭 결과를 새롭게 제안한 모델식에 적용하여 굴절률 n과 고주파 유전상수 ${\varepsilon}$를 계산하였다.

• Journal of the Optical Society of Korea
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• 제14권4호
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• pp.415-419
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• 2010

A phosphor-conversion white light source is demonstrated using an InGaN-based blue laser diode (LD) and a yellow-emitting phosphor excited by the blue LD. The photometric and colorimetric properties of this blue-LD-based white light source are characterized. When injection current of the LD is 100 mA, luminous flux and luminous efficiency of the white light are found to be over 5 lm and 10 lm/W, respectively. When injection current is >90 mA, luminance is estimated to be larger than 10 Mcd/$cm^2$. In addition, color characteristics of the white light such as chromaticity coordinates, a correlated color temperature, and a color rendering index are found to be quite stable as current and temperature of the LD varies. The demonstrated LD-based white light source is expected to be used in high-brightness illumination applications with good color stability.

• 한국결정성장학회지
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• 제33권6호
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• pp.250-254
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• 2023

본 연구에서는 중적외선 영역에서 투과 성능이 우수하며, 높은 굴절률을 갖는 Li₂O-BaO-Ga₂O₃-TeO₂-TiO₂-GeO₂계 유리를 합성하였으며, 각 성분의 함량 변화에 따른 열적, 광학적 특성을 분석하였다. Li₂O-BaO-Ga₂O₃-TeO₂-TiO₂-GeO₂ 계 유리에서, TeO₂의 함량이 증가함에 따라 굴절률이 증가하며 동시에 유리 전이 온도가 낮아짐을 확인하였다. 또한 BaO의 함량이 증가함에 따라 아베수의 감소 없이 굴절률이 증가하였다. IR cut-off 파장은 TeO₂ 및 BaO의 함량이 증가함에 따라 장파장으로 이동하는 것을 확인하였으며 이는 TeO₂ 및 BaO의 큰 몰질량 때문인 것으로 예상된다. Li₂O의 경우, BaO와 치환 형태로 첨가되었으며, 그 함량이 늘어날수록 굴절률의 큰 감소 없이, 유리 전이온도를 감소시킬 수 있는 것으로 확인되었다.

• 한국전기전자재료학회논문지
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• 제31권6호
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• pp.357-361
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• 2018

We demonstrated a crack-free ${\alpha}-Ga_2O_3$ on sapphire substrate by horizontal halide vapor phase epitaxy (HVPE). Oxygen-and gallium chloride-synthesized Ga metal and HCl were used as the precursors, and $N_2$ was used as the carrier gas. The HCl flow and growth temperature were controlled in the ranges of 10~30 sccm and $450{\sim}490^{\circ}C$, respectively. The surface of ${\alpha}-Ga_2O_3$ template grown at $470^{\circ}C$ was flat and the root-mean-square (RMS) roughness was ~2 nm. The full width at half maximum (FWHM) values for the symmetric-plane diffractions, were as small as 50 arcsec and those for the asymmetric-plane diffractions were as high as 1,800 arcsec. The crystal quality of ${\alpha}-Ga_2O_3$ on sapphire can be controlled by varying the HCl flow rate and growth temperature.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.243.1-243.1
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• 2016

Recently, many groups have attempted to fabricate 3-dimensional (3D) structures of GaN such as pyramids, rods, stripes and annulars. Since quantum structures on non-polar and semi-polar planes of 3D structures have less influence of internal electric filed, multi quantum wells (MQWs) formed on those planes have high quantum efficiency. Especially, pyramidal and annular structures consist of various crystal planes with different emission wavelength, providing a possibillity of phosphor-free white light emtting diodes (WLEDs).[1] However, it still has problem to obtain high color rendering index (CRI) number because of narrow-band emission and poor indium composition caused by the formation of few number of facets during metal-organic chemical vapor deposition growth.[2] If we can fabricate 3D structure having more various facets, we can make broad-band emittied WLEDs and improve CRI number. In this study, we suggest a simple method to fabricate 3D structures having various facet and containing high indium composition by means of a combination of metal-organic chemical vapor deposition and wet chemical etching techniques.

• Journal of Astronomy and Space Sciences
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• 제29권3호
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• pp.259-267
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• 2012

Polar cap potential has long been considered as an indicator for the amount of energy flowing in the magnetosphere-ionosphere system. Thus, the estimation of polar cap potential is important to understand the physical process of the magnetosphere. To estimate the polar cap potential in the Northern Hemisphere, merging electric field by Kan & Lee (1979) is adopted. Relationships between the PC index and calculated merging electric field ($E^*$) are examined during full-time and storm-time periods separately. For this purpose Dst, AL, and PC indices and solar wind data are utilized during the period from 1996-2003. From this linear relationship, polar cap potential (${\Phi}^*$) is estimated using the formula by Doyle & Burke (1983). The values are represented as $58.1{\pm}26.9$ kV for the full-time period and $123.7{\pm}84.1$ kV for a storm-time period separately. Considering that the average value of polar cap potential of Doyle & Burke (1983) is about 47 kV during moderately quiet intervals with the S3-2 measurements, these results are similar to such. The monthly averaged variation of Dst, AL, and PC indices are then compared. The Dst and AL indices show distinct characteristics with peaks during equinoctial season whereas the average PC index according to the month shows higher values in autumn than in spring. The monthly variations of the linear correlation coefficients between solar wind parameters and geomagnetic indices are also examined. The PC-AL linear correlation coefficient is highest, being 0.82 with peaks during the equinoctial season. As with the AL index, the PC index may also prove useful for predicting the intensity of an auroral substorm. Generally, the linear correlation coefficients are shown low in summer due to conductance differences and other factors. To assess the role of the PC index during the recovery phase of a storm, the relation between the cumulative PC index and the duration is examined. Although the correlation coefficient lowers with the storm size, it is clear that the average correlation coefficient is high. There is a tendency that duration of the recovery phase is longer as the PC index increases.