• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.1
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• pp.79-89
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• 2014

It has been an increase in consumers who want a high-capacity and fast speed by the newly diffused mobile device(Smart phones, Ultra books, Tablet PC). As a result, the demand for Flash Memory is constantly increasing. Flash Memory is separated by a NAND-type and NOR-type. NAND-type Flash Memory speed is slow, but price is cheaper than the NOR-type Flash Memory. For this reason, NAND-type Flash Memory is widely used in the mobile market. So Fault Detection is very important for Flash Memory Test. In this paper, Proposed PMBIST for Pattern Test of NAND-type Flash Memory improved Fault detection.

• Journal of Information Processing Systems
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• v.11 no.3
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• pp.389-405
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• 2015

Most traditional database systems exploit a record-oriented model where the attributes of a record are placed contiguously in a hard disk to achieve high performance writes. However, for read-mostly data warehouse systems, the column-oriented database has become a proper model because of its superior read performance. Today, flash memory is largely recognized as the preferred storage media for high-speed database systems. In this paper, we introduce a column-oriented database model based on flash memory and then propose a new column-aware flash indexing scheme for the high-speed column-oriented data warehouse systems. Our index management scheme, which uses an enhanced $B^+$-Tree, achieves superior search performance by indexing an embedded segment and packing an unused space in internal and leaf nodes. Based on the performance results of two test databases, we concluded that the column-aware flash index management outperforms the traditional scheme in the respect of the mixed operation throughput and its response time.

• IEMEK Journal of Embedded Systems and Applications
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• v.13 no.3
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• pp.151-160
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• 2018

NAND flash memories have the advantages of fast access speed, high density and low power consumption, thus they have increasing demand in embedded system and mobile environment. Despite the low power and fast speed gains of NAND flash memory, DRAM disk buffers were used because of the performance load and limited durability of NAND flash cell. However, DRAM disk buffers are not suitable for limited energy environments due to their high static energy consumption. In this paper, we propose WAP-LRU (Write pattern Analysis based Placement by LRU) hybrid disk buffer management policy. Our policy designates the buffer location in the hybrid memory by analyzing write pattern of the workloads to check the continuity of the page operations. In our simulation, WAP-LRU increased the lifetime of NAND flash memory by reducing the number of garbage collections by 63.1% on average. In addition, energy consumption is reduced by an average of 53.4% compared to DRAM disk buffers.

• IEMEK Journal of Embedded Systems and Applications
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• v.10 no.3
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• pp.151-156
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• 2015

Recently, an embedded flash memory has been widely used for the Internet of Things(IoT). Due to its nonvolatility, economical feasibility, stability, low power usage, and fast speed. With respect to power consumption, the embedded memory system must consider the most significant design factor. The objective of this research is to design high performance and low power NAND flash memory architecture including a dual buffer as a replacement for NOR flash. Simulation shows that the proposed NAND flash system can achieve better performance than a conventional NOR flash memory. Furthermore, the average memory access time of the proposed system is better that of other buffer systems with three times more space. The use of a small buffer results in a significant reduction in power consumption.

• Journal of Internet of Things and Convergence
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• v.8 no.4
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• pp.9-15
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• 2022

NAND flash memory is used as a medium for various storage devices due to its high data processing speed with low power consumption. However, since the read processing speed of data is about 10 times faster than the write processing speed, various studies are being conducted to improve the speed difference. In particular, flash dedicated buffer management policies have been studied to improve write speed. However, SSD(solid state disks), which has recently been used for various purposes, is more vulnerable to read performance than write performance. In this paper, we find out why read performance is slower than write performance in SSD composed of NAND flash memory and study buffer management policies to improve it. The buffer management policy proposed in this paper proposes a method of improving the speed of a flash-based storage device by analyzing the pattern of read data and applying a policy of pre-reading data to be requested in the future from NAND flash memory. It also proves the effectiveness of the read-ahead policy through simulation.

• Journal of the Semiconductor & Display Technology
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• v.7 no.3
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• pp.17-21
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• 2008

Application of flash memory in mobile and ubiquitous related devices is rapidly being increased due to its low price and high performance. In addition, some notebook computers currently come out into market with a SSD(Solid State Disk) instead of hard-drive based storage system. Regarding this trend, applications need to increase the storage capacity using multiple flash memory chips for larger capacity sooner or later. Flash memory based storage subsystem should resolve the performance bottleneck for writing in perspective of speed and lifetime according to its physical property. In order to make flash memory storage work with tangible performance, reclaiming of invalid regions needs to be controlled in a particular manner to decrease the number of erasures and to distribute the erasures uniformly over the whole memory space as much as possible. In this paper, we study the performance of flash memory recycling algorithms and demonstrate that the proposed algorithm shows acceptable performance for flash memory storage with multiple chips. The proposed cleaning method partitions the memory space into candidate memory regions, to be reclaimed as free, by utilizing threshold values. The proposed algorithm handles the storage system in multi-layered style. The impact of the proposed policies is evaluated through a number of experiments.

• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.4
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• pp.262-269
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• 2005

Semiconductor scientists and engineers ideally desire the faster but the cheaper non-volatile memory devices. In practice, no single device satisfies this desire because a faster device is expensive and a cheaper is slow. Therefore, in this paper, we use heterogeneous non-volatile memories and construct an efficient hierarchy for them. First, a small RAM device (e.g., MRAM, FRAM, and PRAM) is used as a write buffer of flash memory devices. Since the buffer is faster and does not have an erase operation, write can be done quickly in the buffer, making the write latency short. Also, if a write is requested to a data stored in the buffer, the write is directly processed in the buffer, reducing one write operation to flash storages. Second, we use many types of flash memories (e.g., SLC and MLC flash memories) in order to reduce the overall storage cost. Specifically, write requests are classified into two types, hot and cold, where hot data is vulnerable to be modified in the near future. Only hot data is stored in the faster SLC flash, while the cold is kept in slower MLC flash or NOR flash. The evaluation results show that the proposed hierarchy is effective at improving the access time of flash memory storages in a cost-effective manner thanks to the locality in memory accesses.

• Journal of Information Technology Applications and Management
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• v.11 no.2
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• pp.29-43
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• 2004

As the development of an information technique, gradually, mobile device is going to be miniaturized and operates at high speed. By such the requirements, the devices using a flash memory as a storage media are increasing. The flash memory consumes low power, is a small size, and has a fast access time like the main memory. But the flash memory must erase for recording and the erase cycle is limited. JFFS is a representative filesystem which reflects the characteristics of the flash memory. JFFS to be consisted of LSF structure, writes new data to the flash memory in sequential, which is not related to a file size. Mounting a filesystem or an error recovery is achieved through the sequential approach. Therefore, the mounting delay time is happened according to the file system size. This paper proposes a MJFFS to use a multi-checkpoint information to manage a mass flash file system efficiently. A MJFFS, which improves JFFS, divides a flash memory into the block for suitable to the block device, and stores file information of a checkpoint structure at fixed interval. Therefore mounting and error recovery processing reduce efficiently a number of filesystem access by collecting a smaller checkpoint information than capacity of actual files. A MJFFS will be suitable to a mobile device owing to accomplish fast mounting and error recovery using advantage of log foundation filesystem and overcoming defect of JFFS.

• Transactions of the Society of Information Storage Systems
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• v.7 no.1
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• pp.7-12
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• 2011

The flash memory has been remarked as the next generation media of portable and desktop computers' storage devices. Their features include non-volatility, low power consumption, and fast access time for read operations, which are sufficient to present flash memories as major data storage components for desktop and servers. The purpose of our study is to upgrade a traditional mirroring scheme based on SSD storages due to the relatively slow or freezing characteristics of write operations, as compared to fast read operations. For this work, we propose a new storage management scheme called Memory Mirror-Switching based on traditional mirroring scheme. Our Mirror-Switching scheme improves flash operation performance by switching write-workloads from flash memory to RAM and delaying write operations to avoid freezing. Our test results show that our scheme significantly reduces the write operation delay and storage freezing.

• Journal of the Korea Society of Computer and Information
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• v.22 no.2
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• pp.1-7
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• 2017

Recently, NAND flash memory, which is used as a storage medium, is replacing HDD (Hard Disk Drive) at a high speed due to various advantages such as fast access speed, low power, and easy portability. In order to apply NAND flash memory to a computer system, a Flash Translation Layer (FTL) is indispensably required. FTL provides a number of features such as address mapping, garbage collection, wear leveling, and hot data identification. In particular, hot data identification is an algorithm that identifies specific pages where data updates frequently occur. Hot data identification helps to improve overall performance by identifying and managing hot data separately. MHF (Multi hash framework) technique, known as hot data identification technique, records the number of write operations in memory. The recorded value is evaluated and judged as hot data. However, the method of counting the number of times in a write request is not enough to judge a page as a hot data page. In this paper, we propose hot data identification which considers not only the number of write requests but also the persistence of write requests.