• Journal of Sensor Science and Technology
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• v.33 no.1
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• pp.12-17
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• 2024

Floating inverter amplifiers (FIAs) have recently garnered considerable attention owing to their high energy efficiency and inherent resilience to input common-mode voltages and process-voltage-temperature variations. Since the voltage gain of a simple FIA is low, it is typically cascaded or cascoded to achieve a higher voltage gain. However, cascading poses stability concerns in closed-loop applications, while cascoding limits the output swing. This study introduces a gain-enhanced FIA that features cross-coupled body biasing. Through simulations, it is demonstrated that the proposed FIA designed using a 28-nm complementary metal-oxide-semiconductor technology with a 1-V power supply can achieve a high voltage gain (> 90 dB) suitable for dynamic open-loop applications. The proposed FIA can also be used as a closed-loop amplifier by adjusting the amount of positive feedback due to the cross-coupled body biasing. The capability of achieving a high gain with minimum-length devices makes the proposed FIA a promising candidate for low-power, high-speed sensor interface systems.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.67 no.3
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• pp.125-130
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• 2018

Arc lamps are now widely utilized as illumination sources for a large number of investigations in wide-field fluorescence microscopy. Among many power converters for the lamp, the PSFB (Phase-Shift Full-Bridge) converter with the ZVS (Zero Voltage Switching) is the most widely used soft switched circuit in high-power applications. Also, in the most luminaries, the power factor has to be more and more important. Thus, the power factor correction(PFC) must be included in the power system. A new igniter module using the switching power device and the transformer is proposed instead of the conventional igniter using the mechanical contactor. The proposed converter with the high power factor and high efficiency is verified through the experimental works.

• KIEE International Transactions on Electrophysics and Applications
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• v.4C no.3
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• pp.101-105
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• 2004

The efficient power MOSFET inverter applied for a simple and low cost power supply is proposed for driving the dielectric barrier discharge (DBD) lamp load. For decades, the DBD phenomenon has been used for ozone gas production in industry. In this research, the ultraviolet and visible light sources utilizing the DBD lamp is considered as the load for solid-state high frequency power supply. It is found that the simple voltage-source single-ended quasi-resonant ZVS inverter with only one active power switch could effectively drive this load with the output power up to 700 W. The pulse density modulation based control scheme for the single-ended quasi-resonant ZVS inverter using a low voltage and high current power MOSFET switching device is proposed to provide a linear power regulation characteristic in the wide range 0-100％ of the full power as compared with the conventional control based Royer type parallel resonant inverter type power supplies.

• Proceedings of the KIPE Conference
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• 2017.07a
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• pp.365-366
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• 2017

LLC resonant DC-DC converter is widely used in many kinds of applications such as battery energy storage systems, wireless power transfer and high voltage power supply. It is because of characteristics like high efficiency, power density, isolation, wide power level and stability enhancement at high switching frequency. Small signal modeling helps to design controller of the converter by approximating the behavior of nonlinear system with linear state equations. This paper presents comparison between small signal modeling analysis and experimental results of LLC resonant converter.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.63-66
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• 2004

The extraordinary intrinsic properties of SiC have made this material a suitable choice to use in high temperature, high frequency, and high voltage applications. In additional to these, SiC could be employed as the based material for nonvolatile memory applications, mainly due to its extremely low thermal-generation rate at room temperature. In this paper, the reasons of using this material in this particular application is presented and the development of the application over the past fifteen years is reviewed.

• Journal of Power Electronics
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• v.14 no.2
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• pp.203-216
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• 2014

In the conventional dc-dc converter, a pair of additional diode and the adjacent passive component capacitor/inductor can be added to the circuit with an X-shape connection, which generates a family of new topologies. The novel circuits, also called diode-assisted dc-dc converter, enhance the voltage boost/buck capability and have a great potential for high step-up/step-down power conversions. This paper mainly investigates and compares conventional dc-dc converter and diode-assisted dc-dc converter in wide range power conversion from the aspects of silicon devices, passive components requirements, electro-magnetic interference (EMI) and efficiency. Then, a comprehensive comparison example of a high step-up power conversion system was carried out. The two kinds of boost dc-dc converters operate under the same operation conditions. Mathematical analysis and experiment results verify that diode-assisted dc-dc converters are very promising for simultaneous high efficiency and high step-up/step-down power conversion in distributed power supply systems.

• Journal of IKEEE
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• v.24 no.4
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• pp.1093-1097
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• 2020

This work describes the design and characterization of a Ku-band monolithic microwave integrated circuit (MMIC) power amplifier (PA) for satellite communication applications. The device technology used relies on 0.25 ㎛ gate length gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (PHEMT) of wireless information networking (WIN) semiconductor foundry. The developed Ku-band PHEMT MMIC power amplifier has a small-signal gain of 22.2~23.1 dB and saturated output power of 34.8~35.4 dBm over the entire band of 13.75 to 14.5 GHz. Maximum saturated output power is a 35.4 dBm (3.47 W) at 13.75 GHz. Its power added efficiency (PAE) is 30.6~37.83% and the chip dimensions are 4.4 mm×1.9 mm. The developed 3 W PHEMT MMIC power amplifier is expected to be applied in a variety of Ku-band satellite communication applications.

• Proceedings of the KIEE Conference
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• 1994.07a
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• pp.441-443
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• 1994

Modern control theory and high speed switching device such as IGBT have been developed day by day, but it hardly has been applicated practically to the various fields of industry, specially power electronic fields, because there is no cost effective hardware that accommodates modern control theory. Thus, in our study, DSP based ultra high speed general controller which may be exclusively used for power electronic applications is developed.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.409-412
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• 2006

A high data accuracy and low power consumption driving method and output stage of the source driver are proposed for the LTPS TFT-LCD in mobile applications. The proposed driving method is insensitive to the variations of the electrical characteristics of TFTs, which enables the output errors of the source driver are under 1/2 LSB in all gray levels. In addition, the power consumption of the driver with the method is decreased to 9.9mW which is 55.9% of that of the conventional source driver by reducing unnecessary charge waste.

• Proceedings of the KIEE Conference
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• 1992.07a
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• pp.508-511
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• 1992

Modern control theory has been developed day by day, but it hardly has been applicated practically to the various fields of industry, specially power electronic field, because there is no cost effective hardware that accommodates modern control theory. Thus, in our study, DSP based ultra high speed general controller which may be exclusively used for power electronic applications is developed.